公开(公告)号：US11011357B2

公开(公告)日：2021-05-18

申请号：US15890694

申请日：2018-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanbing Wu ,  Anantha K. Subramani ,  Ashish Goel ,  Xiaodong Wang ,  Wei W. Wang ,  Rongjun Wang ,  Chi Hong Ching

IPC: H01J37/34 ,  H01L43/12 ,  H01J37/32 ,  H01J61/10 ,  H01L43/08 ,  H01L43/10

Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

公开(公告)号：US09879341B2

公开(公告)日：2018-01-30

申请号：US15188103

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Deepak Jadhav ,  Ashutosh Agarwal ,  Ashish Goel ,  Vijay Parihar ,  Er-Xuan Ping ,  Randhir P. S. Thakur

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/54 ,  C23C14/56 ,  C23C16/455

CPC classification number: C23C16/45525 ,  C23C14/56 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02381 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

Abstract: Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

公开(公告)号：US09853579B2

公开(公告)日：2017-12-26

申请号：US14560744

申请日：2014-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Anantha K. Subramani ,  Ashish Goel ,  Wei W. Wang ,  Bharath Swaminathan ,  Vijay D. Parkhe ,  Xiaoxiong Yuan

IPC: H02N13/00 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H02N13/00 ,  H01J37/32091 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68792

Abstract: An electrostatic chuck includes a dielectric disk having a support surface to support a substrate and an opposing second surface, wherein at least one chucking electrode is disposed within the dielectric disk; a radio frequency (RF) bias plate disposed below the dielectric disk; a plurality of lamps disposed below the RF bias plate to heat the dielectric disk; a metallic plate disposed below the lamps to absorb heat generated by the lamps; a shaft coupled to the second surface of the dielectric disk at a first end of the shaft to support the dielectric disk in a spaced apart relation to the RF bias plate and extending away from the dielectric disk and through the RF bias plate and the metallic plate; and a rotation assembly coupled to the shaft to rotate the shaft and the dielectric disk with respect to the RF bias plate, lamps, and metallic plate.

公开(公告)号：US09376752B2

公开(公告)日：2016-06-28

申请号：US13789222

申请日：2013-03-07

Applicant: Applied Materials, Inc.

Inventor： Ashish Goel ,  Anantha Subramani

IPC: C23C16/458 ,  C23C14/50 ,  H01J37/34 ,  H01L21/67 ,  H01L21/687 ,  C23C14/56 ,  C23C14/54

CPC classification number: C23C16/4585 ,  C23C14/50 ,  C23C14/541 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3441 ,  H01L21/67115 ,  H01L21/68735

Abstract: Disclosed are apparatus and methods for material and thermal processing of substrates in a single chamber. In one embodiment, an edge ring is provided. The edge ring includes an annular body having an inner peripheral edge, a first surface, and a second surface opposite the first surface, a first raised member extending substantially orthogonally from the second surface, a second raised member extending from the second surface adjacent the first raised member and separated from the first raised member by a first depression, and a third raised member extending from the second surface adjacent the second raised member and separated by a second depression, the second depression comprising a sloped surface having a reflectivity value that is different than a reflectivity value of the first surface.

Abstract translation: 公开了用于在单个室中的衬底的材料和热处理的装置和方法。 在一个实施例中，提供了一个边缘环。 边缘环包括具有内周边缘，第一表面和与第一表面相对的第二表面的环形主体，从第二表面基本正交地延伸的第一凸起构件，从邻近第一表面的第二表面延伸的第二凸起构件 并且由第二凸起部件与第二凸起部件相邻地延伸并且由第二凹部分开，第二凹部包括具有不同的反射率值的倾斜面， 比第一表面的反射率值。

公开(公告)号：US20150279635A1

公开(公告)日：2015-10-01

申请号：US14606367

申请日：2015-01-27

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Deepak Jadhav ,  Ashish Goel ,  Hanbing Wu ,  Prashanth Kothnur ,  Chi Hong Ching

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3408 ,  C23C16/34 ,  C23C16/405 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Abstract translation: 沉积系统及其操作方法包括：阴极; 阴极下方的护罩; 在阴极下面的旋转屏蔽件，用于使阴极暴露于护罩并通过旋转屏蔽的屏蔽孔; 以及用于产生在所述旋转底座上形成载体的材料的旋转底座，其中所述材料具有小于所述材料和所述阴极的厚度的1％的不均匀约束，所述材料和所述阴极在所述阴极和所述载体之间具有角度。