Method and Apparatus for Generating Radiation
    21.
    发明申请
    Method and Apparatus for Generating Radiation 有权
    用于产生辐射的方法和装置

    公开(公告)号:US20150268559A1

    公开(公告)日:2015-09-24

    申请号:US14439476

    申请日:2013-10-03

    CPC classification number: G03F7/70033 H05G2/003 H05G2/006 H05G2/008

    Abstract: A radiation source (e.g., LPP— laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.

    Abstract translation: 用于产生极端UV(EUV)辐射的辐射源(例如,LPP激光产生的等离子体源)具有至少两个具有不同轨迹的燃料粒子流。 每个流被引导以跨过等离子体形成区域聚焦的激发(激光)束的路径,但是轨迹在等离子体形成区域处被间隔开,并且流被相位化,使得仅一条流在 等离子体形成区域,并且使得当来自一个流的燃料粒子在等离子体产生区域产生等离子体和EUV辐射时,其它燃料颗粒被充分间隔开,以致基本上不受等离子体的影响。 该布置允许对于特定燃料粒子尺寸可实现的辐射强度的潜在加倍。

    Methods of providing patterned epitaxy templates for self-assemblable block copolymers for use in device lithography
    28.
    发明授权
    Methods of providing patterned epitaxy templates for self-assemblable block copolymers for use in device lithography 有权
    提供用于自组装嵌段共聚物的图案化外延模板用于器件光刻的方法

    公开(公告)号:US09513553B2

    公开(公告)日:2016-12-06

    申请号:US14387186

    申请日:2013-03-19

    Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

    Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化(例如UV或DUV)曝光,以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂,为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

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