公开(公告)号：US20220334569A1

公开(公告)日：2022-10-20

申请号：US17230897

申请日：2021-04-14

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Elizabeth Neville ,  Umesh Madhav Kelkar ,  Mark R. Denome ,  Prashanth Kothnur ,  Karthik Ramanathan ,  Kartik Shah ,  Orlando Trejo ,  Sergey Meirovich

IPC: G05B19/418 ,  G05B13/02

Abstract: A method including receiving, by a processing device, a first selection of at least one of a first fabrication process or first manufacturing equipment to perform manufacturing operations of the first fabrication process. The method can further include inputting the first selection into a digital replica of the first manufacturing equipment wherein the digital replica outputs physical conditions of the first fabrication process. The method may further include determining environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process. The processing device may further determine a modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment. The method can further include performing at least one of applying the modification to the first fabrication.

公开(公告)号：USD967351S1

公开(公告)日：2022-10-18

申请号：US29755419

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Designer： Alexander N. Lerner ,  Graeme Jamieson Scott ,  Prashanth Kothnur

公开(公告)号：US11447857B2

公开(公告)日：2022-09-20

申请号：US17021661

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting Hou ,  Jianxin Lei ,  Jothilingam Ramalingam ,  Prashanth Kothnur ,  William R. Johanson

IPC: C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

Abstract: Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US09991101B2

公开(公告)日：2018-06-05

申请号：US14725527

申请日：2015-05-29

Applicant: APPLIED MATERIALS, INC.

Inventor： William Johanson ,  Brij Datta ,  Fuhong Zhang ,  Adolph Miller Allen ,  Yu Y. Liu ,  Prashanth Kothnur

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3405 ,  C23C14/35 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461

Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis and rotatable about the central axis, a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate, and an open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis.

公开(公告)号：US11834743B2

公开(公告)日：2023-12-05

申请号：US16570317

申请日：2019-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Lerner ,  Prashanth Kothnur ,  Roey Shaviv ,  Satish Radhakrishnan

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4557 ,  C23C16/45525 ,  C23C16/45574

Abstract: Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

公开(公告)号：USD969980S1

公开(公告)日：2022-11-15

申请号：US29755418

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Designer： Alexander N. Lerner ,  Graeme Jamieson Scott ,  Prashanth Kothnur

公开(公告)号：US20220245307A1

公开(公告)日：2022-08-04

申请号：US17166965

申请日：2021-02-03

Applicant: Applied Materials, Inc.

Inventor： Prashanth Kothnur ,  Karthik Ramanathan ,  Ajit Balakrishna ,  Kartik Shah ,  Umesh Kelkar ,  Vishwas Pandey ,  Prasoon Shukla ,  Sushil Arun Samant

IPC: G06F30/27 ,  G05B13/02 ,  G05B17/02 ,  H01L21/67 ,  H03H17/02

Abstract: Embodiments described herein include processes for generating a hybrid model for modeling processes in semiconductor processing equipment. In a particular embodiment, method of creating a hybrid machine learning model comprises identifying a first set of cases spanning a first range of process and/or hardware parameters, and running experiments in a lab for the first set of cases. The method may further comprise compiling experimental outputs from the experiments, and running physics based simulations for the first set of cases. In an embodiment, the method may further comprise compiling model outputs from the simulations, and correlating the model outputs with the experimental outputs with a machine learning algorithm to provide the hybrid machine learning model.

公开(公告)号：US20220037136A1

公开(公告)日：2022-02-03

申请号：US17503994

申请日：2021-10-18

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Deepak Jadhav ,  Ashish Goel ,  Hanbing Wu ,  Prashanth Kothnur ,  Chi Hong Ching

IPC: H01J37/34 ,  C23C16/34 ,  C23C16/40 ,  C23C14/34 ,  C23C14/54 ,  C23C14/35

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

公开(公告)号：US11170982B2

公开(公告)日：2021-11-09

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Anantha K. Subramani ,  Praburam Raja ,  Steven V. Sansoni ,  John Forster ,  Philip Kraus ,  Yang Guo ,  Prashanth Kothnur ,  Farzad Houshmand ,  Bencherki Mebarki ,  John Joseph Mazzocco ,  Thomas Brezoczky

IPC: H01J37/34 ,  B08B7/00 ,  H01L21/033

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

公开(公告)号：US20200378000A1

公开(公告)日：2020-12-03

申请号：US16854893

申请日：2020-04-21

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Prashanth Kothnur ,  Satish Radhakrishnan ,  Xiaozhou Che

IPC: C23C16/448 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.