公开(公告)号：US20140264354A1

公开(公告)日：2014-09-18

申请号：US14203433

申请日：2014-03-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Robert VISSER ,  John M. WHITE ,  Yan YE ,  Dong-Kil YIM

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/4908

Abstract: The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.

Abstract translation: 本发明一般涉及一种在半导体层与一层或多层之间形成缓冲层的薄膜半导体器件。 在一个实施例中，薄膜半导体器件包括具有第一功函数和第一电子亲和度的半导体层，具有大于第一功函数的第二功函数的缓冲层和小于第一功函数的第二电子亲和度 第一电子亲和力水平; 以及具有小于第二功函数的第三功函数和大于第二电子亲和度的第三电子亲和度的栅介质层。

公开(公告)号：US20140230730A1

公开(公告)日：2014-08-21

申请号：US14261117

申请日：2014-04-24

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  John M. WHITE ,  Robert I. GREENE

IPC: C23C16/455 ,  B05B1/00

CPC classification number: C23C16/45559 ,  B05B1/005 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244

Abstract: Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the cylindrical portion and the downstream end of the conical portion having a larger diameter.

Abstract translation: 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。 气体通道中的至少一个具有从上游侧延伸的长度的一部分的圆柱形形状和扩散板的剩余长度的同轴圆锥形形状，锥形部分的上游端具有与 圆柱形部分和锥形部分的下游端具有较大的直径。

公开(公告)号：US20210090777A1

公开(公告)日：2021-03-25

申请号：US17113769

申请日：2020-12-07

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Carl A. SORENSEN ,  John M. WHITE

IPC: H01F17/06 ,  H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20180166316A1

公开(公告)日：2018-06-14

申请号：US15123231

申请日：2015-04-02

Applicant: Applied Materials, Inc.

Inventor： Zuoqian WANG ,  John M. WHITE

IPC: H01L21/687 ,  H01L21/683 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L21/68757 ,  H01L21/6831 ,  H01L21/68785 ,  H01L51/001 ,  H01L51/56

Abstract: Embodiments disclosed herein generally relate to a substrate carrier system suitable for clamping a substrate and optionally a mask, the substrate carrier system having a stack of removable protective layers. In one embodiment, substrate carrier system is provide that includes a substrate carrier body having a protective layer stack disposed an outer mounting surface of the substrate carrier body. The substrate carrier body is configured to be transported into and out of a processing chamber. The protective layer stack has a plurality of removable protective layers which can be removed as needed to expose a “new” surface for chucking a substrate thereon.

公开(公告)号：US20180051811A1

公开(公告)日：2018-02-22

申请号：US15681825

申请日：2017-08-21

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE

IPC: F16K1/20 ,  F16K1/46

CPC classification number: F16K1/2057 ,  F16J15/46 ,  F16K1/465 ,  F16K51/02 ,  H01L21/67126

Abstract: Vacuum chambers having inflatable slit valve opening seals are described herein. In one example, a vacuum chamber includes a chamber body, a first inflatable seal, and a first slit valve door. The chamber body has a top, a bottom, and sidewalls. A first slit valve opening is formed in the sidewalls. The first inflatable seal is sealingly coupled to the sidewall and circumscribes the first slit valve opening. The first inflatable seal has a base coupled to the sidewall and a hollow tubular portion that can move laterally relative to the base. The first slit valve door is moveable between a close state that contacts the first inflatable seal to provide a vacuum seal between the first slit valve door and chamber body, and an open state that positions the first slit valve door clear of the first slit valve opening.

公开(公告)号：US20180025890A1

公开(公告)日：2018-01-25

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li HOU ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo PARK ,  Robin L. TINER

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  C23C16/34

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US20170327946A1

公开(公告)日：2017-11-16

申请号：US15668064

申请日：2017-08-03

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Carl A. SORENSEN ,  John M. WHITE

IPC: C23C16/455 ,  C23C16/505

CPC classification number: H01F17/06 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08 ,  H01F2017/065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/0206 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20160319422A1

公开(公告)日：2016-11-03

申请号：US15108119

申请日：2015-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Shinichi KURITA ,  Jozef KUDELA ,  John M. WHITE ,  Dieter HAAS

IPC: C23C16/04 ,  H01L51/52 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L51/56 ,  H01L21/687

CPC classification number: C23C16/45548 ,  C23C16/042 ,  C23C16/4402 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68742 ,  H01L51/0011 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/56

Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). A process kit for TFE is provided. The process kit is an assembly including a window, a mask parallel to the window, and a frame. The process kit further includes an inlet channel for flowing process gases into the volume between the window and the mask, an outlet channel for pumping effluent gases away from the volume between the window and the mask, and seals for inhibiting the flow of process gases and effluent gases to undesired locations. A method of performing TFE is provided, including placing a substrate under the mask of the above described process kit, flowing process gases into the process kit, and activating some of the process gases into reactive species by means of an energy source within a processing chamber.

Abstract translation: 本公开涉及薄膜封装（TFE）的方法和装置。 提供TFE的工艺套件。 处理套件是包括窗口，与窗口平行的掩模和框架的组件。 工艺组件还包括用于将工艺气体流入窗口和面罩之间的体积的入口通道，用于将流出气体从窗口和面罩之间的体积排出的出口通道，以及用于抑制工艺气体流动的密封件， 流出气体到不需要的位置。 提供了一种执行TFE的方法，包括将基底放置在上述处理试剂盒的掩模之下，将工艺气体流入工艺试剂盒，并通过处理室内的能量源将一些工艺气体活化成反应性物质 。

公开(公告)号：US20160043319A1

公开(公告)日：2016-02-11

申请号：US14782500

申请日：2014-04-21

Applicant: APPLIED MATERIALS, INC.

Inventor： John M. WHITE ,  Robert Jan VISSER ,  Dieter HAAS ,  Tommaso VERCESI ,  Andreas LOPP

IPC: H01L51/00 ,  H01L51/56 ,  G02B26/02

Abstract: The embodiments described herein generally relate to active alignment of a fine metal mask. The fine metal mask is connected with a frame through a plurality of microactuators. The microactuators can act on the fine metal mask to stretch the mask, reposition the mask or both. In this way, the position and size of the fine metal mask can be maintained in relation to the substrate.

Abstract translation: 本文描述的实施例通常涉及精细金属掩模的主动对准。 细金属掩模通过多个微致动器与框架连接。 微致动器可以作用在细金属掩模上以拉伸掩模，重新定位掩模或两者。 以这种方式，可以相对于衬底维持细金属掩模的位置和尺寸。

公开(公告)号：US20150343580A1

公开(公告)日：2015-12-03

申请号：US14463254

申请日：2014-08-19

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Zuoqian WANG

IPC: B23Q3/154 ,  C23C14/24 ,  C23C14/28 ,  H01L21/683

CPC classification number: B23Q3/1546 ,  C23C14/042 ,  C23C14/50 ,  Y10T279/23

Abstract: An electromagnetic mask chuck is described herein. The electromagnetic mask chuck includes a body with a plurality of electromagnets formed therein. The electromagnets can then deliver a magnetic force to a mask to position and hold the mask over or on the substrate for further deposition. The electromagnets are controlled using a power source, to deliver a controlled magnetic field to the mask.

Abstract translation: 这里描述了电磁掩模卡盘。 电磁掩模卡盘包括其中形成有多个电磁体的主体。 电磁铁然后可以将磁力传递到掩模，以将掩模定位并保持在衬底上或衬底上以进一步沉积。 使用电源来控制电磁体，以将受控的磁场传送到掩模。