公开(公告)号：US20230151487A1

公开(公告)日：2023-05-18

申请号：US18099371

申请日：2023-01-20

Applicant: Applied Materials, Inc.

Inventor： Liangfa HU ,  Prashant Kumar KULSHRESHTHA ,  Anjana M. PATEL ,  Abdul Aziz KHAJA ,  Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Satya Teja Babu THOKACHICHU ,  Byung Seok KWON ,  Ratsamee LIMDULPAIBOON ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/505 ,  C23C16/45597 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45519

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

公开(公告)号：US20210108309A1

公开(公告)日：2021-04-15

申请号：US16960277

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Vivek Bharat SHAH ,  Anup Kumar SINGH ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/02 ,  C23C16/32 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52

Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

公开(公告)号：US20190259585A1

公开(公告)日：2019-08-22

申请号：US16262307

申请日：2019-01-30

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Sidharth BHATIA ,  Ganesh BALASUBRAMANIAN

IPC: H01J37/32

Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

公开(公告)号：US20180294146A1

公开(公告)日：2018-10-11

申请号：US15947393

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Prashanth KOTHNUR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN ,  Changgong WANG

IPC: H01J37/32

Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.

公开(公告)号：US20180114679A1

公开(公告)日：2018-04-26

申请号：US15718087

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Vivek Bharat SHAH ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN

IPC: H01J37/32 ,  B08B5/00 ,  B08B7/00 ,  B08B9/08 ,  C23C16/50 ,  C23C16/24

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/08 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/50 ,  H01J37/3288

Abstract: Implementations of the present disclosure provide methods for treating a processing chamber. In one implementation, the method includes purging a 300 mm substrate processing chamber, without the presence of a substrate, by flowing a purging gas into the substrate processing chamber at a flow rate of about 0.14 sccm/mm2 to about 0.33 sccm/mm2 and a chamber pressure of about 1 Torr to about 30 Torr, with a throttle valve of a vacuum pump system of the substrate processing chamber in a fully opened position, wherein the purging gas is chemically reactive with deposition residue on exposed surfaces of the substrate processing chamber.

公开(公告)号：US20170352569A1

公开(公告)日：2017-12-07

申请号：US15612054

申请日：2017-06-02

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Xing LIN ,  Edward P. HAMMOND, IV ,  Juan Carlos ROCHA-ALVAREZ ,  Chidambara A. RAMALINGAM ,  Ganesh BALASUBRAMANIAN ,  Ren-Guan DUAN ,  Jianhua ZHOU ,  Jonathan J. STRAHLE

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01L21/6831

Abstract: A heated support assembly is disclosed which includes a body comprising aluminum nitride doped with magnesium oxide having a volume resistivity of about 1×1010 Ω-cm at about 600 degrees Celsius, an electrode embedded in the body, and a heater mesh embedded in the body.

公开(公告)号：US20170092511A1

公开(公告)日：2017-03-30

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6708 ,  H01L21/67201 ,  H01L21/68785

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20160093521A1

公开(公告)日：2016-03-31

申请号：US14875392

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Dale R. DU BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Ganesh BALASUBRAMANIAN ,  Lipyeow YAP ,  Jianhua ZHOU ,  Thomas NOWAK

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/324 ,  H01L21/687

CPC classification number: H01L21/68 ,  C23C16/4585 ,  H01J37/32091 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/68728 ,  H01L21/6875

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract translation: 提供了一种用于加热室中的衬底的方法和装置。 用于将基板定位在处理室中的装置。 在一个实施例中，该装置包括基板支撑组件，该基板支撑组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板的多个定心构件，并且用于使基板相对于参考轴线基本垂直 到支撑面。 多个定心构件沿着支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑衬底的周缘的第一端部。

公开(公告)号：US20160049323A1

公开(公告)日：2016-02-18

申请号：US14824229

申请日：2015-08-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Jianhua ZHOU ,  Xing LIN ,  Ren-Guan DUAN ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Swayambhu P. BEHERA ,  Sungwon HA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA- ALVAREZ ,  Prashant Kumar KULSHRESHTHA ,  Jason K. FOSTER ,  Mukund SRINIVASAN ,  Uwe P. HALLER ,  Hari K. PONNEKANTI

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/68757 ,  H02N13/00

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Abstract translation: 本公开的实施例提供了一种静电卡盘，用于在高温下维持在等离子体反应器中正在加工的基板的平坦度。 在一个实施例中，静电卡盘包括联接到支撑杆的卡盘体，卡盘主体具有基底支撑表面，卡盘体的体积电阻率值约为1×107ohm-cm至约1×1015ohm- 在约250℃至约700℃的温度下，以及嵌入在本体中的电极，电极耦合到电源。 在一个实例中，卡盘主体由氮化铝材料组成，已经被观察到能够在沉积或蚀刻过程期间优化约600℃或更高的夹持性能，或任何其他使用高工作温度和 基板夹紧功能。

公开(公告)号：US20150262859A1

公开(公告)日：2015-09-17

申请号：US14632648

申请日：2015-02-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Ramprakash SANKARAKRISHNAN ,  Robert KIM ,  Dale R. DU BOIS ,  Kirby Hane FLOYD ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 该装置包括基座和旋转构件，两者都可移动地设置在处理室内。 旋转构件适于旋转设置在腔室中的衬底。 衬底可以在加工过程中被边缘环支撑。 边缘环可以选择性地接合基座或旋转构件。 在一个实施例中，边缘环在沉积工艺期间接合基座，并且边缘环在基底旋转期间接合旋转构件。 处理过程中衬底的旋转可以是离散的或连续的。