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    Command control for synchronous memory device
    22.
    发明授权
    Command control for synchronous memory device 有权
    同步存储设备的命令控制

    公开(公告)号：US08380917B2

    公开(公告)日：2013-02-19

    申请号：US12138307

    申请日：2008-06-12

    申请人： Kenji Shibata ,  Mitsuhiro Nagao ,  Satoru Kawmoto

    发明人： Kenji Shibata ,  Mitsuhiro Nagao ,  Satoru Kawmoto

    IPC分类号： G06F12/00 ,  G06F13/28 ,  G06F13/00

    CPC分类号： G11C16/10 ,  G11C7/10 ,  G11C7/1072

    摘要： Systems, methods, and circuits for command control for synchronous memory device are disclosed. In one embodiment, a memory device comprises a first synchronous memory controlled by a second group of commands which includes a first command receiving section for receiving a first group of commands, and a second command receiving section for receiving a command that is unique to the first synchronous memory and different from the first group of commands during execution of the first group of commands received by the first command receiving section. The synchronous memory further comprises a second synchronous memory controlled by the first group of commands, where the first synchronous memory and the second synchronous memory are coupled to a same data bus, and where the second group of commands is different from the first group of commands.

    摘要翻译： 公开了用于同步存储装置的命令控制的系统，方法和电路。 在一个实施例中，存储器设备包括由第二组命令控制的第一同步存储器，该第二组命令包括用于接收第一组命令的第一命令接收部分和用于接收第一命令的唯一命令的第二命令接收部分 同步存储器，并且在执行由第一命令接收部分接收的第一组命令期间与第一组命令不同。 同步存储器还包括由第一组命令控制的第二同步存储器，其中第一同步存储器和第二同步存储器耦合到相同的数据总线，并且其中第二组命令与第一组命令不同 。

    MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE
    23.
    发明申请
    MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE 审中-公开
    压电薄膜元件和压电元件的制造方法

    公开(公告)号：US20120304429A1

    公开(公告)日：2012-12-06

    申请号：US13488230

    申请日：2012-06-04

    申请人： Fumimasa HORIKIRI ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

    发明人： Fumimasa HORIKIRI ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

    IPC分类号： H01L41/22

    CPC分类号： H01L41/0815 ,  H01L41/1873 ,  H01L41/316 ,  H01L41/332 ,  Y10T29/42

    摘要： A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode.

    摘要翻译： 压电薄膜元件的制造方法包括在基板上形成下电极，在下电极上形成包含具有钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，在压电膜上形成掩模图案， 通过掩模图案蚀刻压电膜，在干蚀刻之后去除掩模图案，并在氧化气氛中对压电膜进行热处理。 压电器件的制造方法包括：在压电膜元件的制造方法形成的压电膜元件的压电膜上形成上电极，将电压施加单元或电压检测单元连接到下电极， 上电极。

    Piezoelectric thin film element and piezoelectric thin film device including the same
    24.
    发明授权
    Piezoelectric thin film element and piezoelectric thin film device including the same 有权
    压电薄膜元件和包括该压电薄膜元件的压电薄膜器件

    公开(公告)号：US08310135B2

    公开(公告)日：2012-11-13

    申请号：US12797340

    申请日：2010-06-09

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    IPC分类号： H01L41/187

    CPC分类号： H01L41/18

    摘要： A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.

    摘要翻译： 提供了一种压电薄膜元件，其包括在基板上：由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆lt; lE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z表示的压电薄膜 = 1）; 其上层叠有上电极，其中，所述压电薄膜具有假立方晶体，四方晶体或正交晶体中的任一种的晶体结构，或者具有至少两个所述伪晶体的晶体结构， 立方晶体，四方晶体或正交晶体，并且在这样的晶体结构中，（001）取向的（001）取向晶粒与（111）方向取向的（111）取向晶粒共存， 由晶粒的晶轴和衬底表面的法线中的至少一个形成的角度设定在0°至10°的范围内。

    Piezoelectric thin film element
    26.
    发明授权
    Piezoelectric thin film element 有权
    压电薄膜元件

    公开(公告)号：US08058779B2

    公开(公告)日：2011-11-15

    申请号：US12588484

    申请日：2009-10-16

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

    IPC分类号： H01L41/187

    CPC分类号： H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

    摘要： A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.

    摘要翻译： 压电薄膜元件包括底电极，压电层和衬底上的顶电极。 压电层包括由（NaxKyLiz）NbO 3（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的钙钛矿型氧化物， 电极包括算术平均粗糙度Ra不大于0.86nm的表面粗糙度或均方根粗糙度Rms不大于1.1nm的表面粗糙度。

    IN-LIQUID PLASMA FILM-FORMING APPARATUS, ELECTRODE FOR IN-LIQUID PLASMA, AND FILM-FORMING METHOD USING IN-LIQUID PLASMA
    27.
    发明申请
    IN-LIQUID PLASMA FILM-FORMING APPARATUS, ELECTRODE FOR IN-LIQUID PLASMA, AND FILM-FORMING METHOD USING IN-LIQUID PLASMA 有权
    液体等离子体成膜装置，液体等离子体电极和使用液体等离子体的成膜方法

    公开(公告)号：US20110229656A1

    公开(公告)日：2011-09-22

    申请号：US12671773

    申请日：2009-03-02

    申请人： Kenji Shibata ,  Toshihisa Shimo ,  Kyoko Kumagai ,  Hidetaka Hayashi ,  Shinya Okuda ,  Shinfuku Nomura ,  Hiromichi Toyota

    发明人： Kenji Shibata ,  Toshihisa Shimo ,  Kyoko Kumagai ,  Hidetaka Hayashi ,  Shinya Okuda ,  Shinfuku Nomura ,  Hiromichi Toyota

    IPC分类号： H05H1/48

    CPC分类号： C23C16/509 ,  C23C16/26 ,  C23C16/4485 ,  H01J37/32357

    摘要： In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21. And, a decomposed component of the raw material is deposited onto a surface of the substrate “S” by contacting the plasma, which has generated at the plasma generating unit 29, with the substrate “S.”By means of the present construction, it becomes feasible to generate plasma in liquid without ever using a second electrode that serves as a substrate.

    摘要翻译： 在液体等离子体成膜装置中，具有容纳基材“S”的容器1和包含原料的液体“L” 用于液体内等离子体的电极2，设置在容器1中的电极2; 用于向用于液体内等离子体的电极2供电的电力装置3; 用于液体内等离子体的电极2装备有：具有放电端22的主电极21; 辅助电极26不仅面向放电端22，而且还设置在放电端22和彼此相对的衬底“S”之间; 以及等离子体产生单元29，其具有由排放端22的表面22a和辅助电极26的面向表面22a的表面26a划分的空间，并且用于通过向主电极供电的方式产生等离子体 并且，通过使在等离子体产生单元29产生的等离子体与基板“S”接触，将原料的分解成分沉积在基板“S”的表面上。借助于本构造 在不用使用作为基板的第二电极的情况下，可以在液体中产生等离子体。

    THERAPEUTIC AGENT FOR IRRITABLE BOWEL SYNDROME
    28.
    发明申请
    THERAPEUTIC AGENT FOR IRRITABLE BOWEL SYNDROME 审中-公开
    可治疗性皮肤病综合征的治疗药物

    公开(公告)号：US20100267796A1

    公开(公告)日：2010-10-21

    申请号：US12065120

    申请日：2007-10-26

    申请人： Tsuyoshi Yamagata ,  Kenji Shibata ,  Yoichi Nishiya ,  Takashi Seishi ,  Takashi Sakuma

    发明人： Tsuyoshi Yamagata ,  Kenji Shibata ,  Yoichi Nishiya ,  Takashi Seishi ,  Takashi Sakuma

    IPC分类号： A61K31/38 ,  C07D495/04 ,  A61K31/4155 ,  A61K31/381 ,  A61P1/00 ,  A61P1/12 ,  A61P1/14

    CPC分类号： A61K31/38 ,  A61K31/381 ,  A61K31/4155 ,  C07D495/04

    摘要： The present invention provides a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a compound having an adenosine uptake inhibitory activity, a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a tricyclic compound represented by formula (I) [wherein L represents —NHC(═O)— or the like, R1 represents a hydrogen atom, halogen, or the like, X1—X2—X3 represents S—CR7═CR8 (wherein R7 and R8 may be the same or different and each represents a hydrogen atom, halogen, substituted or unsubstituted lower alkyl, or the like), or the like, Y represents —CH2SO2—, —SO2CH2— or the like, R2 represents substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkoxy, substituted or unsubstituted aryl, or the like] or a pharmaceutically acceptable salt thereof, and the like.

    摘要翻译： 本发明提供一种肠易激综合征治疗剂，其包含作为活性成分的具有腺苷摄取抑制活性的化合物，用于肠易激综合征的治疗剂，其包含作为活性成分的由式（3）表示的三环化合物 I）[其中L表示-NHC（= O） - 等，R 1表示氢原子，卤素等，X 1 -X 2 -X 3表示S-CR 7 = CR 8（其中R 7和R 8可以相同或 不同，各自表示氢原子，卤素，取代或未取代的低级烷基等）等，Y表示-CH 2 SO 2 - ， - SO 2 CH 2 - 等，R 2表示取代或未取代的低级烷基，取代或未取代的低级 烷氧基，取代或未取代的芳基等）或其药学上可接受的盐等。

    Piezoelectric Thin Film Device
    29.
    发明申请
    Piezoelectric Thin Film Device 有权
    压电薄膜器件

    公开(公告)号：US20100237745A1

    公开(公告)日：2010-09-23

    申请号：US12771173

    申请日：2010-04-30

    申请人： Kenji Shibata ,  Fumihito Oka

    发明人： Kenji Shibata ,  Fumihito Oka

    IPC分类号： H01L41/04 ,  H02N2/18

    CPC分类号： G01C19/5663 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/1136 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

    摘要： A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0

    摘要翻译： 传感器或致动器包括压电薄膜器件，其包括下电极，压电薄膜和上电极，以及连接在压电薄膜器件的下电极和上电极之间的电压检测器件。 压电薄膜由（K1-xNax）NbO3（0