发明授权
- 专利标题: Piezoelectric thin film element
- 专利标题(中): 压电薄膜元件
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申请号: US12588484申请日: 2009-10-16
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公开(公告)号: US08058779B2公开(公告)日: 2011-11-15
- 发明人: Kazufumi Suenaga , Kenji Shibata , Fumihito Oka , Hideki Sato
- 申请人: Kazufumi Suenaga , Kenji Shibata , Fumihito Oka , Hideki Sato
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Cable, Ltd.
- 当前专利权人: Hitachi Cable, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2008-311972 20081208; JP2009-114122 20090511
- 主分类号: H01L41/187
- IPC分类号: H01L41/187
摘要:
A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.
公开/授权文献
- US20100141099A1 Piezoelectric thin film element 公开/授权日:2010-06-10
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