Abstract:
Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract:
A technique for improved ion beam transport is disclosed. In one particular exemplary embodiment, the technique may be realized as an ion implantation system comprising an ion source for generating an ion beam, a mass analyzer for selecting a desired ion species from ion particles the ion beam, an ion decelerator configured to reduce an energy of ions in the ion beam, an end station for supporting at least one workpiece to be implanted with ions from the ion beam, and a neutral particle separator configured to remove neutrally-charged particles from the ion beam prior to reaching the ion decelerator.
Abstract:
An electron beam emitted from an electron gun (G) forms a reduced image on a sample (S) through a non-dispersion Wien-filter (5-1), an electromagnetic deflector (11-1), a beam separator (12-1), and a tablet lens (17-1) as an objective lens. The beam separator (12-1) is configured such that a distance by which a secondary electron beam passes through the beam separator is approximately three times longer than a distance by which a primary electron beam passes through the beam separator. Therefore, even if a magnetic field in the beam separator is set to deflect the primary electron beam by a small angle equal to or less than approximately 10 degrees, the secondary electron beam can be deflected by approximately 30 degrees, so that the primary and secondary electron beams are sufficiently separated. Also, since the primary electron beam is deflected by a small angle, less aberration occurs in the primary electron beam. Accordingly, since a light path length of a primary electro-optical system, it is possible to reduce the influence of space charge and the occurrence of deflection aberration.
Abstract:
A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.
Abstract:
An electron beam apparatus and a method for providing an energy-filtered primary electron beam are described. Therein, a primary electron beam having an asymmetric first energy distribution is generated by means of an electron source. The primary electron beam is high-pass energy filtered using a retarding lens.
Abstract:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
Abstract:
A lens adjustment method and a lens adjustment system which adjust a plurality of multi-pole lenses of an electron spectrometer attached to a transmission electron microscope, optimum conditions of the multi-pole lenses are determined through simulation based on a parameter design method using exciting currents of the multi-pole lenses as parameters.
Abstract:
In an irradiation system with an ion beam/charged particle beam, an ion beam/charged particle beam is deflected by an energy filter for the energy analysis and then a wafer irradiated with the beam. The energy filter controls the spread of magnetic field distribution caused by a deflection magnet, cancels a leakage magnetic field in the longitudinal direction, and bends the ion beam/charged particle beam at a uniform angle at any positions overall in scanning-deflection area.
Abstract:
An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.
Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.