Technique for improved ion beam transport
    212.
    发明授权
    Technique for improved ion beam transport 有权
    改进离子束传输技术

    公开(公告)号:US07619228B2

    公开(公告)日:2009-11-17

    申请号:US11529508

    申请日:2006-09-29

    Abstract: A technique for improved ion beam transport is disclosed. In one particular exemplary embodiment, the technique may be realized as an ion implantation system comprising an ion source for generating an ion beam, a mass analyzer for selecting a desired ion species from ion particles the ion beam, an ion decelerator configured to reduce an energy of ions in the ion beam, an end station for supporting at least one workpiece to be implanted with ions from the ion beam, and a neutral particle separator configured to remove neutrally-charged particles from the ion beam prior to reaching the ion decelerator.

    Abstract translation: 公开了一种用于改进离子束传输的技术。 在一个特定的示例性实施例中,该技术可以被实现为包括用于产生离子束的离子源的离子注入系统,用于从离子粒子离子束中选择所需离子种类的质量分析器,被配置为减少能量的离子减速器 离子束中的离子的终端站,用于支撑待离子离子的至少一个工件的端站,以及构造成在到达离子减速器之前从离子束去除中性带电粒子的中性粒子分离器。

    ELECTRON BEAM APPARATUS
    213.
    发明申请
    ELECTRON BEAM APPARATUS 有权
    电子束设备

    公开(公告)号:US20090218506A1

    公开(公告)日:2009-09-03

    申请号:US11996701

    申请日:2006-07-24

    Abstract: An electron beam emitted from an electron gun (G) forms a reduced image on a sample (S) through a non-dispersion Wien-filter (5-1), an electromagnetic deflector (11-1), a beam separator (12-1), and a tablet lens (17-1) as an objective lens. The beam separator (12-1) is configured such that a distance by which a secondary electron beam passes through the beam separator is approximately three times longer than a distance by which a primary electron beam passes through the beam separator. Therefore, even if a magnetic field in the beam separator is set to deflect the primary electron beam by a small angle equal to or less than approximately 10 degrees, the secondary electron beam can be deflected by approximately 30 degrees, so that the primary and secondary electron beams are sufficiently separated. Also, since the primary electron beam is deflected by a small angle, less aberration occurs in the primary electron beam. Accordingly, since a light path length of a primary electro-optical system, it is possible to reduce the influence of space charge and the occurrence of deflection aberration.

    Abstract translation: 从电子枪(G)发射的电子束通过非分散维恩滤波器(5-1),电磁偏转器(11-1),光束分离器(12- 1)和作为物镜的平板电脑镜头(17-1)。 束分离器(12-1)被构造成使得二次电子束通过分束器的距离比一次电子束通过分束器的距离大约三倍。 因此,即使将分束器中的磁场设定为使一次电子束偏转等于或小于约10度的小角度,二次电子束可以偏转大约30度,使得初级和次级 电子束充分分离。 此外,由于一次电子束以小角度偏转,所以在一次电子束中产生较小的像差。 因此,由于一次电光学系统的光路长度,可以减小空间电荷的影响和偏转像差的发生。

    ION BEAM APPARATUS AND METHOD FOR ION IMPLANTATION
    214.
    发明申请
    ION BEAM APPARATUS AND METHOD FOR ION IMPLANTATION 失效
    离子束设备和离子植入方法

    公开(公告)号:US20090206270A1

    公开(公告)日:2009-08-20

    申请号:US12300172

    申请日:2007-06-13

    Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

    Abstract translation: 多用途离子注入器束线配置被构造用于使得能够注入常见的单原子掺杂剂离子种类和簇离子,该束线配置具有质量分析器磁体,该质量分析器磁体限定了磁体的铁磁极之间的相当宽度的极隙和质量选择孔, 分析器磁体的大小适于接受来自至少约80mm高度和至少约7mm宽度的槽形离子源提取孔的艺术离子束,并且在与质量选择孔的宽度相对应的平面中产生分散体 质量选择孔能够被设置为质量选择宽度,其尺寸被设计成选择相同掺杂物种类的簇离子的束,但递增地不同的分子量,质量选择孔也能够被设定为基本上更窄的质量 选择宽度和质量选择孔径处的分辨率足以能够选择光束的分析器磁体 单原子或分子量的单原子掺杂离子。

    Irradiation system with ion beam/charged particle beam
    218.
    发明授权
    Irradiation system with ion beam/charged particle beam 有权
    带离子束/带电粒子束的照射系统

    公开(公告)号:US07423276B2

    公开(公告)日:2008-09-09

    申请号:US11202102

    申请日:2005-08-12

    Inventor: Takanori Yagita

    CPC classification number: H01J37/3171 H01J37/05 H01J49/26

    Abstract: In an irradiation system with an ion beam/charged particle beam, an ion beam/charged particle beam is deflected by an energy filter for the energy analysis and then a wafer irradiated with the beam. The energy filter controls the spread of magnetic field distribution caused by a deflection magnet, cancels a leakage magnetic field in the longitudinal direction, and bends the ion beam/charged particle beam at a uniform angle at any positions overall in scanning-deflection area.

    Abstract translation: 在具有离子束/带电粒子束的照射系统中,离子束/带电粒子束被用于能量分析的能量过滤器偏转,然后用束照射的晶片。 能量滤波器控制由偏转磁体引起的磁场分布的扩展,抵消纵向的泄漏磁场,并且在扫描偏转区域中的任何位置处将离子束/带电粒子束以均匀的角度弯曲。

    Broad beam ion implantation architecture
    219.
    发明申请
    Broad beam ion implantation architecture 有权
    宽束离子注入架构

    公开(公告)号:US20080078956A1

    公开(公告)日:2008-04-03

    申请号:US11540897

    申请日:2006-09-29

    Applicant: Shu Satoh

    Inventor: Shu Satoh

    Abstract: An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.

    Abstract translation: 一种用于提供质量分析的带状束的离子注入系统,其包括包括等离子体源和提取部件的离子束源,其中所述提取部件被配置为提取发散的离子束并将所述离子束引导到窗框磁体组件 。 窗框磁体组件包括正交布置在窗形磁轭内的两对线圈,以产生可独立控制的均匀的交叉磁场。 第一组线圈在发散光束的宽度上形成均匀的场,以将其转换成均匀的平行宽离子束。 第二组线圈在垂直方向上弯曲离子束的片材,以提供用于离子质量选择的质量分散。

    APPARATUS AND METHOD FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS
    220.
    发明申请
    APPARATUS AND METHOD FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS 有权
    使用RIBBON和SPOT BEAMS进行离子束植入的装置和方法

    公开(公告)号:US20080029716A1

    公开(公告)日:2008-02-07

    申请号:US11759876

    申请日:2007-06-07

    Applicant: Jiong CHEN

    Inventor: Jiong CHEN

    Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

    Abstract translation: 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器,以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线,其中第二路径包括并入能量过滤的减速或加速系统。 最后,公开了离子注入的方法,其中注入模式可以从目标的一维扫描切换到二维扫描。

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