-
公开(公告)号：US08242468B2
公开(公告)日：2012-08-14
申请号：US12824426
申请日：2010-06-28
Applicant: Thomas Parrill , Aditya Agarwal
Inventor： Thomas Parrill , Aditya Agarwal
IPC: H01J37/317 , H01J37/30
CPC classification number: H01J37/3171 , H01J37/05 , H01J37/20 , H01J2237/2007
Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract translation: 离子注入机特别适用于通过离子注入和裂解来与制造光伏器件相关的工艺剂量和能量需求。
-
公开(公告)号：US07687786B2
公开(公告)日：2010-03-30
申请号：US12122108
申请日：2008-05-16
Applicant: Thomas Parrill , Aditya Agarwal
Inventor： Thomas Parrill , Aditya Agarwal
IPC: H01J37/30
CPC classification number: H01J37/3171 , H01J37/05 , H01J37/20 , H01J2237/2007
Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract translation: 离子注入机特别适用于通过离子注入和裂解来制造与制造光伏器件相关的工艺剂量和能量需求。
-
公开(公告)号：US07750322B2
公开(公告)日：2010-07-06
申请号：US12418237
申请日：2009-04-03
Applicant: Thomas Parrill , Aditya Agarwal
Inventor： Thomas Parrill , Aditya Agarwal
IPC: H01J37/317 , H01J37/30 , H01L21/265
CPC classification number: H01J37/3171 , H01J37/05 , H01J37/20 , H01J2237/2007
Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract translation: 离子注入机特别适用于通过离子注入和裂解来与制造光伏器件相关的工艺剂量和能量需求。
-
公开(公告)号：US20090283705A1
公开(公告)日：2009-11-19
申请号：US12418237
申请日：2009-04-03
Applicant: THOMAS PARRILL , ADITYA AGARWAL
Inventor： THOMAS PARRILL , ADITYA AGARWAL
CPC classification number: H01J37/3171 , H01J37/05 , H01J37/20 , H01J2237/2007
Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract translation: 离子注入机特别适用于通过离子注入和裂解来制造与制造光伏器件相关的工艺剂量和能量需求。
-
Patent Agency Ranking
公开(公告)号：US20100072401A1
公开(公告)日：2010-03-25
申请号：US12237963
申请日：2008-09-25
Applicant: Thomas Parrill , Victor Benveniste
Inventor： Thomas Parrill , Victor Benveniste
IPC: H01J37/08
CPC classification number: H01J37/3171 , H01J37/20 , H01J2237/201 , H01J2237/3109 , H01J2237/31701 , H01L21/26506
Abstract: Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.
Abstract translation: 结合多波束离子源的离子注入机用于满足制造用于光伏器件的薄层相关的工艺剂量和能量需求。 薄层通过离子注入形成，然后切割。
-
公开(公告)号：US20090283669A1
公开(公告)日：2009-11-19
申请号：US12122108
申请日：2008-05-16
Applicant: Thomas Parrill , Aditya Agarwal
Inventor： Thomas Parrill , Aditya Agarwal
CPC classification number: H01J37/3171 , H01J37/05 , H01J37/20 , H01J2237/2007
Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract translation: 离子注入机特别适用于通过离子注入和裂解来制造与制造光伏器件相关的工艺剂量和能量需求。
-
公开(公告)号：US07897945B2
公开(公告)日：2011-03-01
申请号：US12237963
申请日：2008-09-25
Applicant: Thomas Parrill , Victor Benveniste
Inventor： Thomas Parrill , Victor Benveniste
IPC: H01J37/30
CPC classification number: H01J37/3171 , H01J37/20 , H01J2237/201 , H01J2237/3109 , H01J2237/31701 , H01L21/26506
Abstract: Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.
Abstract translation: 结合多波束离子源的离子注入机用于满足制造用于光伏器件的薄层相关的工艺剂量和能量需求。 薄层通过离子注入形成，然后切割。
-
公开(公告)号：US20100264303A1
公开(公告)日：2010-10-21
申请号：US12824426
申请日：2010-06-28
Applicant: Thomas Parrill , Aditya Agarwal
Inventor： Thomas Parrill , Aditya Agarwal
IPC: H01J37/317 , H01J49/26
CPC classification number: H01J37/3171 , H01J37/05 , H01J37/20 , H01J2237/2007
Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract translation: 离子注入机特别适用于通过离子注入和裂解来制造与制造光伏器件相关的工艺剂量和能量需求。
-
公开(公告)号：US06828572B2
公开(公告)日：2004-12-07
申请号：US10404493
申请日：2003-04-01
Applicant: Ronald N. Reece , Michael A. Graf , Thomas Parrill , Brian S. Freer
Inventor： Ronald N. Reece , Michael A. Graf , Thomas Parrill , Brian S. Freer
IPC: G01N2100
CPC classification number: H01J37/3045 , H01J37/244 , H01J37/304 , H01J37/3171 , H01J2237/24528 , H01J2237/24578 , H01J2237/30455
Abstract: The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
Abstract translation: 本发明通过在离子注入过程中通过入射离子束角度检测器监测和校正角误差来促进半导体器件制造。 此外，本发明通过相对于入射离子束校准处理盘而不在离子注入工艺之前在晶片上测量植入结果来促进半导体器件的制造。
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.009 seconds)
