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公开(公告)号：US11942756B2
公开(公告)日：2024-03-26
申请号：US17421195
申请日：2020-01-08
发明人： Bruno Jentzsch , Alexander Tonkikh
CPC分类号： H01S5/02255 , H01L33/0045 , H01L33/0093 , H01L33/44 , H01L33/46 , H01S5/0287 , H01S5/4012 , H01S5/4056 , H01L2933/0025
摘要： The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.
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公开(公告)号：US20240079850A1
公开(公告)日：2024-03-07
申请号：US18147006
申请日：2022-12-28
发明人： Wen-Cheng HSU , Yu-Heng HONG , Yao-Wei HUANG , Kuo-Bin HONG , Hao-Chung KUO
CPC分类号： H01S5/0421 , H01S5/0282 , H01S5/04256 , H01S5/11
摘要： A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.
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公开(公告)号：US11909172B2
公开(公告)日：2024-02-20
申请号：US17141223
申请日：2021-01-05
申请人： ASAHI KASEI KABUSHIKI KAISHA , National University Corporation Tokai National Higher Education and Research System
发明人： Ziyi Zhang , Maki Kushimoto , Hiroshi Amano
CPC分类号： H01S5/0264 , H01S5/0201 , H01S5/0287 , H01S5/22 , H01S5/4031 , H01S5/3215 , H01S5/34 , H01S2301/176 , H01S2304/04
摘要： An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.
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公开(公告)号：US20240039250A1
公开(公告)日：2024-02-01
申请号：US18335584
申请日：2023-06-15
CPC分类号： H01S5/50 , H01S5/1014 , H01S5/0285 , H01S5/0206 , H01S2304/04
摘要： The present invention concerns an optoelectronic device D such as a Semiconductor optical amplifier (SOA) working in a continuous wave condition and able to amplify high frequencies optical signals. The optoelectronic device D comprise an active zone I (such as SOA) with a slab (3) in a direct bias working in a continuous wave and a taper zone (II) connected to the active zone (I).
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公开(公告)号：US11870212B2
公开(公告)日：2024-01-09
申请号：US16963054
申请日：2018-03-28
发明人： Kazumasa Kishimoto , Naoki Nakamura
CPC分类号： H01S5/0208 , H01S5/04256 , H01S5/04257 , H01S5/12 , H01S5/2275 , H01S5/0283 , H01S5/2224
摘要： A mesa (34) includes a resonator and a second conductivity type contact layer (24). Grooves (32) are provided on both sides of the mesa (34). The first conductivity type contact layer (12) and a side face of the mesa (34) including an end face of the resonator construct an L shape (50). The first conductivity type contact layer (12) constructs bottom surfaces of the L shape (50) and the grooves (32). A side face of the groove (32) includes a slope (38) near the bottom surface (46) and a side face (42) above. A side face of the L shape (50) includes a slope (40) near the bottom surface (48) and a side face (44) above. A first electrode (28) is connected to the first conductivity type contact layer (12) at the bottom surface (46) of the groove (32). A second electrode (30) is connected to the second conductivity type contact layer (24) above the mesa (34).
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16.发明授权公开(公告)号：US11867813B2
公开(公告)日：2024-01-09
申请号：US17690200
申请日：2022-03-09
发明人： James W. Raring , Melvin McLaurin , Paul Rudy , Vlad Novotny
IPC分类号： G01S17/86 , G01S17/10 , G01S17/89 , G01S7/481 , F21K9/64 , H01S5/00 , H01S5/024 , F21V29/70 , G01S7/487 , H01S5/02212 , H01S5/343 , H01S5/40 , G01S17/931 , H01S5/02251 , H01S5/02325 , H01S5/02375 , H01S5/028 , H01S5/22 , H01S5/02 , H01S5/02255 , H01S5/02345
CPC分类号： G01S17/10 , F21K9/64 , F21V29/70 , G01S7/487 , G01S7/4817 , G01S17/86 , G01S17/89 , G01S17/931 , H01S5/0085 , H01S5/02212 , H01S5/02251 , H01S5/02325 , H01S5/02375 , H01S5/02469 , H01S5/34333 , H01S5/4012 , H01S5/0215 , H01S5/0217 , H01S5/0287 , H01S5/02255 , H01S5/02345 , H01S5/22 , H01S5/4031
摘要： A distance detecting system for use in mobile machines comprises a gallium and nitrogen containing laser diode disposed within a light of a mobile machine. The gallium and nitrogen containing laser diode is configured to emit a first light with a first peak wavelength. A wavelength conversion member is configured to produce a white light. A first sensing light signal is based on the first peak wavelength. One or more optical elements are configured to direct at least partially the white light to illuminate one or more target objects or areas and to transmit respectively the first sensing light signal for sensing at least one remote point. A detector is configured to detect reflected signals of the first sensing light signal to determine coordinates of the at least one remote point.
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公开(公告)号：US11804696B2
公开(公告)日：2023-10-31
申请号：US16973458
申请日：2019-06-12
申请人： OSRAM OLED GmbH
发明人： Sven Gerhard , Christoph Eichler , Alfred Lell , Muhammad Ali
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/026 , H01S5/0282 , H01S5/0424
摘要： A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.
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公开(公告)号：US20230318261A1
公开(公告)日：2023-10-05
申请号：US18204903
申请日：2023-06-01
发明人： Michele TAMAGNONE , Marco PICCARDO , Dmitry KAZAKOV , Christina Maria SPÄGELE , Federico CAPASSO
CPC分类号： H01S5/141 , B82Y20/00 , H01S5/0687 , G02B26/0816 , G02B1/005 , H01S5/0283
摘要： A laser device includes a gain medium including a facet. The laser device includes a metasurface including a plurality of supercells. The metasurface is disposed on a substrate and configured to reflect and focus a first portion of light from the facet back to the gain medium as a feedback beam. The metasurface can be configured to reflect a second portion of the light as an output beam at an angle that is nonzero relative to a direction of the feedback beam. The metasurface can be configured to transmit a second portion of the light as an output beam through the metasurface away from the facet. The emission wavelength of the laser device can be tuned by translating the metasurface. The output beam can be collimated towards a fixed direction while tuning the wavelength.
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19.发明授权公开(公告)号：US11757254B2
公开(公告)日：2023-09-12
申请号：US16989028
申请日：2020-08-10
发明人： Peter Fuchs , Ann Russell , Thomas Falck , Hubert Halbritter , Bruno Jentzsch , Christian Lauer
CPC分类号： H01S5/18361 , H01S3/10061 , H01S5/0281 , H01S5/18397
摘要： An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.
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公开(公告)号：US20230268720A1
公开(公告)日：2023-08-24
申请号：US18171432
申请日：2023-02-20
申请人： NICHIA CORPORATION
发明人： Tetsushi TAKANO , Masanori OKADA
CPC分类号： H01S5/143 , H01S5/1053 , H01S5/34346 , H01S5/041 , H01S5/02469 , H01S5/34333 , H01S5/028
摘要： The laser device includes a first mirror and a second mirror forming a resonator, a gain medium disposed between the first mirror and the second mirror and having a light emitting surface, an antireflection film provided on the light emitting surface of the gain medium, at least one optical element disposed between the gain medium and the second mirror, and a diffraction grating disposed between the optical element and the second mirror. The gain medium is a semiconductor layered body including an active layer and having a varying gain distribution in at least a first direction within the light emitting surface, and includes no waveguide.
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