Temperature transmitter
    14.
    发明授权
    Temperature transmitter 失效
    温度变送器

    公开(公告)号:US5498079A

    公开(公告)日:1996-03-12

    申请号:US363249

    申请日:1994-12-23

    Inventor: Timothy D. Price

    CPC classification number: G01K7/16 G01K3/005

    Abstract: A temperature transmitter includes a temperature probe, such as an RTD or thermocouple, and a transmitter housing. Electrical circuitry in the transmitter housing is adapted for coupling to the temperature probe and providing an output related to a sensed temperature. The temperature housing has a first side for coupling to the temperature probe and a second side which carried a plurality of electrical connections electrically connected to the circuitry carried in the transmitter housing. An elongated recess on an outer surface of the first side of the transmitter housing channels electrical wiring which connects to the temperature probe in a direction away from the temperature probe and toward the electrical connections carried on the second side of the transmitter housing.

    Abstract translation: 温度变送器包括温度探头,例如RTD或热电偶,以及变送器外壳。 变送器壳体中的电路适于耦合到温度探头并提供与感测温度相关的输出。 温度壳体具有用于耦合到温度探针的第一侧和承载多个电连接到在变送器壳体中承载的电路的电连接的第二侧。 在变送器壳体的第一侧的外表面上的细长凹槽通过电线,该电线在远离温度探头的方向上连接温度探头,并朝向在变送器外壳的第二侧承载的电气连接。

    Low inductance ceramic capacitor and method for its making
    15.
    发明授权
    Low inductance ceramic capacitor and method for its making 失效
    低电感陶瓷电容器及其制造方法

    公开(公告)号:US4419714A

    公开(公告)日:1983-12-06

    申请号:US364819

    申请日:1982-04-02

    Inventor: Charles H. Locke

    CPC classification number: H01G4/385 H01G4/30 Y10T29/435

    Abstract: Described is an improved common faced terminated multi-layer ceramic capacitor structure capable of embodying multiple capacitors of various maximum voltage and capacitance rating and method for its making. The structure features a ceramic body including multiple sections having a dielectric element and companion plate of one or more types, the types defined by the number and placement on the plate of plate tabs. The sections are aligned in the body such that the plates are located at displaced intervals in the direction of the body length while the plate tabs are located at displaced intervals in the direction of the body width and exposed at a common body face. Buses interconnect the tabs and plate in groups at common face. By selectively connecting the buses, one or more capacitors may be formed in the body. A structure is improved by providing grooves in the common face to align tabs in groups and to maintain the groups separated with the effect that the maximum voltage the structure can withstand is not reduced to mis-alignment of tabs during formation of the body. The method features steps for grooving the common face and simultaneously aligning tabs in the body.

    Abstract translation: 描述了一种改进的共面端接多层陶瓷电容器结构,其能够体现各种最大电压和电容额定值的多个电容器及其制造方法。 该结构具有陶瓷体,该陶瓷体包括具有一个或多个类型的电介质元件和伴随板的多个部分,其类型由板片的板上的数量和位置限定。 这些部分在主体中对准,使得板沿主体长度的方向以移动的间隔定位,同时板突片位于沿着身体宽度的方向上移动的间隔并且暴露在共同的身体表面。 公共汽车将公共面上的标签和板块组合在一起。 通过选择性地连接总线,可以在主体中形成一个或多个电容器。 通过在公共面中设置凹槽来改进结构,并且保持基体分离,使结构能够承受的最大电压不会在形成身体期间减小到突片的不对准。 该方法具有用于切割公共面并同时对准身体中的突片的步骤。

    Dielectric films for semiconductor devices
    17.
    发明授权
    Dielectric films for semiconductor devices 失效
    用于半导体器件的电介质膜

    公开(公告)号:US3558348A

    公开(公告)日:1971-01-26

    申请号:US3558348D

    申请日:1968-04-18

    Inventor: RAND MYRON J

    CPC classification number: H01L21/3145 C23C16/308 Y10S148/113 Y10S148/114

    Abstract: MIXED SILICON OXIDE-SILICON NITRIDE FILMS OF PARTICULAR COMPOSITIONS ARE VAPOR DEPOSITED CONTROLLABLY ON SEMICONDUCTOR DEVICES BY A REACTION PROCESS IN NITROGEN AT BETWEEN 700-900*C. USING SILANE (SIH4) AND NITRIC OXIDE (NO) AS THE REACTANTS. THE COMPOSITION OF THE DEPOSITED FILM IS A FUNCTION OF THE RATIO OF REACTANT CONCENTRATIONS. PARTICULAR COMPOSITIONS YIELD FILMS WHICH COMBINE MINIMAL STRESS, RESISTANCE TO PENETRATION OF CONTAMINANTS, AND ETCHABILITY.

Patent Agency Ranking