Error detection
    13.
    发明授权

    公开(公告)号:US11742050B2

    公开(公告)日:2023-08-29

    申请号:US17839168

    申请日:2022-06-13

    IPC分类号: G11C29/44 G11C29/14 G11C29/42

    摘要: A method for detecting a reading error of a datum in memory. A binary word which is representative of the datum and an error correcting or detecting code is read by: reading a first part of the binary word stored at a first address in a first memory circuit; and reading a second part of the binary word stored at a second address in a second memory circuit. The first and second parts read from the first and second memory circuits, respectively, are concatenated to form a read binary word. The datum is then obtained by removing the error correcting or detecting code from the read binary word. A new error correcting or detecting code is calculated from the obtained datum and compared to the removed error correcting or detecting code to detect error in the obtained datum.

    Semiconductor memory device and operating method thereof

    公开(公告)号:US11640843B2

    公开(公告)日:2023-05-02

    申请号:US17220284

    申请日:2021-04-01

    申请人: SK hynix Inc.

    发明人: Noh Hyup Kwak

    摘要: According to an embodiment of the present disclosure, a semiconductor memory device includes a mode register circuit including a plurality of write mode register sets for providing a plurality of setting codes or a plurality of monitoring codes; and a defect detection circuit suitable for outputting a defect determination signal by detecting any defect in the mode register circuit, based on the plurality of monitoring codes, wherein each of the write mode register sets includes: a storing circuit suitable for storing an operational code according to a mode register write command; and an output control circuit suitable for outputting the stored operational code in the storing circuit as a corresponding setting code, or inverting the stored operational code in the storing circuit to output a corresponding monitoring code, according to a test mode signal.

    SEMICONDUCTOR MEMORY DEVICE DETECTING DEFECT, AND OPERATING METHOD THEREOF

    公开(公告)号:US20230121078A1

    公开(公告)日:2023-04-20

    申请号:US17954663

    申请日:2022-09-28

    摘要: Provided are a memory device detecting a defect and an operating method thereof. The memory device includes a memory cell area including a memory cell array that stores data, and a peripheral circuit area including a control logic configured to control operations of the memory cell array, wherein the peripheral circuit area further includes a defect detection circuit, the defect detection circuit being configured to generate a count result value by selecting a first input signal from a plurality of input signals and counting at least one time interval of the first input signal based on a clock signal, and to detect a defect of the first input signal by comparing an expected value with the count result value, and the at least one time interval is a length of time in which logic low or logic high is maintained.

    SYSTEM FOR OUTPUTTING TEST DATA FROM MULTIPLE CORES AND METHOD THEREOF

    公开(公告)号:US20230092302A1

    公开(公告)日:2023-03-23

    申请号:US17482151

    申请日:2021-09-22

    申请人: SK hynix Inc.

    摘要: A system for outputting test data from cores to one communication interface. The system includes shared memories corresponding to the cores. Each shared memory includes a ring buffer and an array of slots. Each core generates a diagnostic message, and stores the generated diagnostic message in a select memory region of the ring buffer corresponding to a first empty slot of the array of slots. A selected core finds a first diagnostic message among diagnostic messages stored in the shared memories, and outputs the first diagnostic message to a personal computer through the communication interface.

    Direct testing of in-package memory

    公开(公告)号:US11587633B2

    公开(公告)日:2023-02-21

    申请号:US17349612

    申请日:2021-06-16

    摘要: Methods, systems, and devices for direct testing of in-package memory are described. A memory subsystem package may include non-volatile memory, volatile memory that may be configured as a cache, and a controller. The memory subsystem may support direct access to the non-volatile memory for testing the non-volatile memory in the package using a host interface of the memory subsystem rather than using dedicated contacts on the package. To ensure deterministic behavior during testing operations, the memory subsystem may, when operating with a test mode enabled, forward commands received from a host device (such as automated test equipment) to a memory interface of the non-volatile memory and bypass the cache-related circuitry. The memory subsystem may include a separate conductive path that bypasses the cache for forwarding commands and addresses to the memory interface during testing.