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公开(公告)号:US11848068B2
公开(公告)日:2023-12-19
申请号:US17851255
申请日:2022-06-28
发明人: Byoungsul Kim , Hokyong Lee , Hwajin Jung , Yongjoo Choi
CPC分类号: G11C29/44 , G11C7/1045 , G11C29/14 , G11C29/34 , G11C2029/1202 , G11C2029/1204 , G11C2029/1802
摘要: A method for testing a memory chip including: performing an electrical die sorting (EDS) test on the memory chip; performing a package test when the EDS test is passed; performing a module test when the package test is passed; performing a mounting test when the module test is passed; and setting the memory chip to a mirroring mode through a fusing operation when the EDS test, the package test, the module test or the mounting test is failed.
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公开(公告)号:US11810634B2
公开(公告)日:2023-11-07
申请号:US17243086
申请日:2021-04-28
发明人: Sadayuki Okuma
IPC分类号: G11C29/00 , G11C29/38 , G11C17/16 , G11C29/14 , G11C11/4096 , G11C11/4093 , G11C17/18
CPC分类号: G11C29/38 , G11C11/4093 , G11C11/4096 , G11C17/16 , G11C17/18 , G11C29/14
摘要: Disclosed herein is an apparatus that includes a data terminal, a memory cell array, a mode register storing a plurality of operation parameters, and an output circuit configured to output, in response to a read command, an incorrect data to the data terminal instead of a correct data read from the memory cell array when a predetermined one of the operation parameters indicates a test mode.
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公开(公告)号:US11742050B2
公开(公告)日:2023-08-29
申请号:US17839168
申请日:2022-06-13
发明人: Fabrice Romain , Mathieu Lisart
CPC分类号: G11C29/44 , G11C29/14 , G11C29/42 , G11C2029/4402
摘要: A method for detecting a reading error of a datum in memory. A binary word which is representative of the datum and an error correcting or detecting code is read by: reading a first part of the binary word stored at a first address in a first memory circuit; and reading a second part of the binary word stored at a second address in a second memory circuit. The first and second parts read from the first and second memory circuits, respectively, are concatenated to form a read binary word. The datum is then obtained by removing the error correcting or detecting code from the read binary word. A new error correcting or detecting code is calculated from the obtained datum and compared to the removed error correcting or detecting code to detect error in the obtained datum.
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公开(公告)号:US11726142B2
公开(公告)日:2023-08-15
申请号:US17030069
申请日:2020-09-23
发明人: Yu-Pin Lin , Lien-Hsiang Sung
IPC分类号: G01R31/3187 , G11C29/44 , G11C29/14 , G11C13/00 , G11C11/406 , G06F11/14 , G06F11/00 , G11C16/34 , G11C5/14
CPC分类号: G01R31/3187 , G11C29/14 , G11C29/4401 , G06F11/002 , G06F11/1441 , G11C5/148 , G11C11/40618 , G11C11/40622 , G11C13/0033 , G11C16/3418
摘要: An integrated circuit self-repair method and an integrated circuit thereof are provided. The integrated circuit self-repair method includes: transmitting, by a main register, a predetermined logic state to at least three registers, and setting the at least three registers to the predetermined logic state; outputting, according to the predetermined logic state in the at least three registers, the predetermined logic state to drive a controlled circuit to perform a function; and when a minority of the at least three registers are changed to an opposite logic state due to an emergency occurring at an input power source, outputting the predetermined logic state according to the predetermined logic state of the remaining registers, and transmitting the predetermined logic state back to the register that is in the opposite logic state, to correct the opposite logic state to the predetermined logic state.
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公开(公告)号:US20230178163A1
公开(公告)日:2023-06-08
申请号:US18103603
申请日:2023-01-31
CPC分类号: G11C29/10 , G06F9/30101 , G06F11/221 , G11C29/14
摘要: A system includes a memory device and a processing device coupled to the memory device. The processing device is configured to switch an operating mode of the memory device between a test mode and a non-test mode. The system further includes a test mode access component that is configured to access the memory device while the memory device is in the test mode to perform a test mode operation.
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公开(公告)号:US11640843B2
公开(公告)日:2023-05-02
申请号:US17220284
申请日:2021-04-01
申请人: SK hynix Inc.
发明人: Noh Hyup Kwak
摘要: According to an embodiment of the present disclosure, a semiconductor memory device includes a mode register circuit including a plurality of write mode register sets for providing a plurality of setting codes or a plurality of monitoring codes; and a defect detection circuit suitable for outputting a defect determination signal by detecting any defect in the mode register circuit, based on the plurality of monitoring codes, wherein each of the write mode register sets includes: a storing circuit suitable for storing an operational code according to a mode register write command; and an output control circuit suitable for outputting the stored operational code in the storing circuit as a corresponding setting code, or inverting the stored operational code in the storing circuit to output a corresponding monitoring code, according to a test mode signal.
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公开(公告)号:US20230121078A1
公开(公告)日:2023-04-20
申请号:US17954663
申请日:2022-09-28
发明人: Bongkil JUNG , Sangwan NAM , Keeho JUNG
摘要: Provided are a memory device detecting a defect and an operating method thereof. The memory device includes a memory cell area including a memory cell array that stores data, and a peripheral circuit area including a control logic configured to control operations of the memory cell array, wherein the peripheral circuit area further includes a defect detection circuit, the defect detection circuit being configured to generate a count result value by selecting a first input signal from a plurality of input signals and counting at least one time interval of the first input signal based on a clock signal, and to detect a defect of the first input signal by comparing an expected value with the count result value, and the at least one time interval is a length of time in which logic low or logic high is maintained.
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公开(公告)号:US11626179B2
公开(公告)日:2023-04-11
申请号:US17395221
申请日:2021-08-05
申请人: SK hynix Inc.
发明人: Min Soo Kang , Noh Hyup Kwak , Hyun Seung Kim , Yong Ho Seo
摘要: An electronic device includes a masking signal generation circuit configured to generate a test masking signal by receiving a fuse data during a period in which a test masking mode is executed; and a test mode signal generation circuit configured to, when a test command for executing a test in an internal circuit is input, execute the test based on the test masking signal.
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公开(公告)号:US20230092302A1
公开(公告)日:2023-03-23
申请号:US17482151
申请日:2021-09-22
申请人: SK hynix Inc.
发明人: Siarhei Rusakovich
摘要: A system for outputting test data from cores to one communication interface. The system includes shared memories corresponding to the cores. Each shared memory includes a ring buffer and an array of slots. Each core generates a diagnostic message, and stores the generated diagnostic message in a select memory region of the ring buffer corresponding to a first empty slot of the array of slots. A selected core finds a first diagnostic message among diagnostic messages stored in the shared memories, and outputs the first diagnostic message to a personal computer through the communication interface.
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公开(公告)号:US11587633B2
公开(公告)日:2023-02-21
申请号:US17349612
申请日:2021-06-16
发明人: Taeksang Song , Hyunyoo Lee , Saira Samar Malik , Kang-Yong Kim
摘要: Methods, systems, and devices for direct testing of in-package memory are described. A memory subsystem package may include non-volatile memory, volatile memory that may be configured as a cache, and a controller. The memory subsystem may support direct access to the non-volatile memory for testing the non-volatile memory in the package using a host interface of the memory subsystem rather than using dedicated contacts on the package. To ensure deterministic behavior during testing operations, the memory subsystem may, when operating with a test mode enabled, forward commands received from a host device (such as automated test equipment) to a memory interface of the non-volatile memory and bypass the cache-related circuitry. The memory subsystem may include a separate conductive path that bypasses the cache for forwarding commands and addresses to the memory interface during testing.
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