公开(公告)号：US20100090109A1

公开(公告)日：2010-04-15

申请号：US12415907

申请日：2009-03-31

Applicant: Michio HATANO ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

Inventor： Michio HATANO ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

IPC: G01N23/225

CPC classification number: H01J37/256 ,  H01J37/244 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/2605 ,  H01J2237/2806

Abstract: A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

Abstract translation: 扫描电子显微镜包括用于向样品照射电子束的照射光学系统; 用于支撑样品的样品保持器，布置在样品室内部; 至少一个电场供给电极，布置在所述样品保持器周围; 和离子电流检测电极。

公开(公告)号：US07675034B2

公开(公告)日：2010-03-09

申请号：US12130038

申请日：2008-05-30

Applicant: Jacob Simon Faber

Inventor： Jacob Simon Faber

IPC: G01N13/10 ,  G01N23/02 ,  G21K5/04

CPC classification number: G02B21/0016 ,  H01J37/026 ,  H01J37/20 ,  H01J37/228 ,  H01J37/256 ,  H01J37/28 ,  H01J2237/2482

Abstract: An optical microscope slide in a charged particle instrument such as an electron microscope or a focused ion beam instrument. Conventional microscope slides are not fit for use in an electron microscope as they are insulating and would thus charge when viewed in an electron microscope due to the impinging beam of charged particles. However, microscope slides exist that show a coating with a conductive layer of e.g. Indium Tin Oxide (ITO). These microscope slides are normally used for heating the object mounted on the slide by passing a current through the conductive layer. Experiments show that these microscope slides can be used advantageously in a charged particle instrument by connecting the conductive layer to e.g. ground potential, thereby forming a return path for the impinging charged particles and thus avoiding charging. The invention further relates to a charged particle instrument that is further equipped with an optical microscope.

Abstract translation: 在电子显微镜或聚焦离子束仪器等带电粒子仪器中的光学显微镜载玻片。 常规的显微镜载玻片不适合用于电子显微镜，因为它们是绝缘的，因此由于带电粒子的撞击光束在电子显微镜中观察时会充电。 然而，显示器载玻片存在，其显示具有例如导电层的涂层。 氧化铟锡（ITO）。 这些显微镜幻灯片通常用于通过使电流通过导电层来加热安装在载玻片上的物体。 实验表明，这些显微镜载玻片可以有利地用于带电粒子仪器，通过将导电层连接到例如电极。 接地电位，从而形成用于撞击带电粒子的返回路径，从而避免充电。 本发明还涉及另外配备有光学显微镜的带电粒子仪器。

公开(公告)号：US07511271B2

公开(公告)日：2009-03-31

申请号：US11230642

申请日：2005-09-21

Applicant: Michio Hatano ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

Inventor： Michio Hatano ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

IPC: H01J47/00

CPC classification number: H01J37/256 ,  H01J37/244 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/2605 ,  H01J2237/2806

Abstract: A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

Abstract translation: 扫描电子显微镜包括用于向样品照射电子束的照射光学系统; 用于支撑样品的样品保持器，布置在样品室内; 至少一个电场供给电极，布置在所述样品保持器周围; 和离子电流检测电极。

公开(公告)号：US07294834B2

公开(公告)日：2007-11-13

申请号：US11155014

申请日：2005-06-16

Applicant: Anjam Khursheed

Inventor： Anjam Khursheed

IPC: G01N23/00

CPC classification number: H01J37/256 ,  G01N23/225 ,  H01J37/28 ,  H01J2237/14 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485

Abstract: In a scanning electron microscope, an emitted primary electron beam is diverted by an angle of at least about 45 degrees prior to incidence with a specimen. The beam may be bent by a magnetic separator. The separator may also serve to deflect secondary electron and back scattered electrons. As the angle of emissions and reflections from the specimen is close to the angle of incidence, bending the primary electron beam prior to incidence, allows the electron source to be located so as not to obstruct the travel of emissions and reflections to suitable detectors.

Abstract translation: 在扫描电子显微镜中，发射的一次电子束在与样品入射之前被转向至少约45度的角度。 梁可以通过磁选机弯曲。 分离器还可以用于偏转二次电子和背散射电子。 当来自样品的发射角和反射角接近于入射角时，在入射之前弯曲一次电子束，允许电子源被定位成不妨碍发射和反射到合适的检测器的行进。

公开(公告)号：US07202475B1

公开(公告)日：2007-04-10

申请号：US10796577

申请日：2004-03-08

Applicant: Anne L. Testoni

Inventor： Anne L. Testoni

IPC: H01J37/30 ,  G01N23/00 ,  G21K7/00

CPC classification number: G01N23/2252 ,  H01J37/256 ,  H01J2237/2445 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01J2237/2561 ,  H01J2237/2566 ,  H01J2237/2611 ,  H01J2237/2807

Abstract: Disclosed are methods and apparatus for characterizing defects by using X-ray emission analysis techniques. The X-rays are emitted in response to an impinging beam, such as an electron beam, directed towards the sample surface where a defect resides. It may also be used to help determine where the void(s) are with respect to the interconnect structure. Methods disclosed are for spatially locating defects in or on integrated circuits. Also disclosed are methods for identifying the elemental composition of defects and spatially locating different elemental components of defects.

Abstract translation: 公开了通过使用X射线发射分析技术来表征缺陷的方法和装置。 X射线响应于诸如电子束的撞击光束而被发射，该光束指向缺陷所在的样品表面。 它还可以用于帮助确定空隙相对于互连结构的位置。 公开的方法是用于空间定位集成电路中或其上的缺陷。 还公开了用于识别缺陷的元素组成并空间定位不同元素缺陷组分的方法。

公开(公告)号：US07141790B2

公开(公告)日：2006-11-28

申请号：US10838207

申请日：2004-05-05

Applicant: Masanari Koguchi ,  Ruriko Tsuneta

Inventor： Masanari Koguchi ,  Ruriko Tsuneta

IPC: G01N23/00 ,  G01N23/225 ,  G21K7/00

CPC classification number: H01J37/256 ,  G01N23/2252 ,  H01J37/26 ,  H01J2237/2807

Abstract: The purpose of the present invention is to inspect the position, number, and size of fine defects in a variety of solid state materials, including a semiconductor device and metallic materials, with a high spatial resolution of nanometer order. The positron irradiation function is installed in the converged electron beam apparatus. The defect location information is obtained from the converged electron beam location information, and the number and size of defects are obtained from the detected information of γ-rays created by pair annihilation of electrons and positrons, and this two-dimensional distribution information is displayed in the monitor. Information on ultra-fine defects in a crystal can be provided with high-speed and high-resolution, and nondestructively in the case of a semiconductor wafer.

Abstract translation: 本发明的目的是以纳米级的高空间分辨率来检查包括半导体器件和金属材料在内的各种固态材料的精细缺陷的位置，数量和尺寸。 正电子照射功能安装在会聚电子束装置中。 从会聚的电子束位置信息获得缺陷位置信息，并且从检测到的由电子和正电子的湮灭产生的伽马射线的信息获得缺陷的数量和大小，并且将该二维分布信息显示在 监视器。 在半导体晶片的情况下，可以以高速，高分辨率和非破坏性的方式提供关于晶体中超细缺陷的信息。

公开(公告)号：US20060011836A1

公开(公告)日：2006-01-19

申请号：US11232964

申请日：2005-09-23

Applicant: Kazutoshi Kaji ,  Kazuhiro Ueda ,  Koji Kimoto ,  Takashi Aoyama ,  Shunroku Taya ,  Shigeto Isakozawa

Inventor： Kazutoshi Kaji ,  Kazuhiro Ueda ,  Koji Kimoto ,  Takashi Aoyama ,  Shunroku Taya ,  Shigeto Isakozawa

IPC: G21K7/00 ,  G01N23/00

CPC classification number: H01J37/256

Abstract: There is provided an element mapping unit, scanning transmission electron microscope, and element mapping method that enable to acquire an element mapping image very easily. On the scanning transmission electron microscope, the electron beam transmitted through an object to be analyzed enters into the element mapping unit. The electron beam is analyzed of its energy into spectrum by an electron spectrometer and an electron energy loss spectrum is acquired. Because the acceleration voltage data for each element and window data for 2-window method, 3-window method or contrast tuning method are already stored in a database and accordingly the spectrum measurement is carried out immediately even when an element to be analyzed is changed to another, the operator can confirm a two-dimensional element distribution map immediately. Besides, because every electron beam that enters into an energy filter passes through the object point, aberration strain in the electron spectrometer can be minimized and higher energy stability can be achieved. As a result, drift of the electron energy loss spectrum acquired by analyzing the electron beam into spectrum can be minimized and element distribution with higher accuracy can be acquired.

Abstract translation: 提供了能够非常容易地获取元素映射图像的元素映射单元，扫描透射电子显微镜和元件映射方法。 在扫描透射电子显微镜上，通过待分析物体传输的电子束进入元件映射单元。 电子束通过电子光谱仪将其能量分析成光谱，并获得电子能量损失光谱。 因为用于2窗口方法，3窗口方法或对比度调整方法的每个元素和窗口数据的加速电压数据已经存储在数据库中，因此即使当要分析的元素被改变为 另一方面，操作者可以立即确认二维元素分布图。 此外，由于进入能量过滤器的每个电子束通过物点，所以可以使电子光谱仪中的像差应变最小化并且可以实现更高的能量稳定性。 结果，可以将通过将电子束分析成光谱而获得的电子能量损耗光谱的漂移最小化，并且可以获得具有更高精度的元素分布。

公开(公告)号：US06946857B2

公开(公告)日：2005-09-20

申请号：US10868582

申请日：2004-06-15

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC: G01B15/00 ,  G01B15/04 ,  G01B15/08 ,  G01N23/225 ,  G01N27/00 ,  G01R31/02 ,  G01R31/305 ,  G01R31/307 ,  G04B15/00 ,  H01J37/20 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more contact holes and/or vias wherein the electron beam includes a cross-section which is greater than the one or more contact holes. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current.

Abstract translation: 一方面，本发明是用于获得关于半导体晶片上的一个或多个接触孔和/或通孔的信息的系统和方法。 在这方面，在一个实施例中，该系统包括电子枪以在一个或多个接触孔和/或通孔上照射电子束，其中电子束包括大于一个或多个接触孔的横截面。 该系统还包括耦合到半导体晶片的电流测量装置可以测量补偿电流，其中响应于照射在一个或多个接触孔上的电子束产生补偿电流。 该系统还包括耦合到当前测量装置的数据处理器，以使用补偿电流来确定与一个或多个接触孔和/或过孔有关的信息。

公开(公告)号：US20050103995A1

公开(公告)日：2005-05-19

申请号：US10988086

申请日：2004-11-12

Applicant: Katsuaki Yanagiuchi ,  Wakako Okawa

Inventor： Katsuaki Yanagiuchi ,  Wakako Okawa

IPC: G01N23/225 ,  H01J37/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/252 ,  H01J37/256 ,  G01N23/00 ,  G21K7/00

CPC classification number: H01J37/256 ,  G01N23/225 ,  H01J2237/2527

Abstract: The method of measuring crystallographic orientations, crystal systems or the like of the surface of a specimen has steps of: irradiating the specimen with an ion beam; measuring tho secondary electrons generated by the irradiation of the ion beam; repeating the irradiation of the ion beam and the measurement of the secondary electrons with each variation in an angle of incidence of the ion beam with respect to the specimen; and determining the crystalline state based on the variation in the amount of the secondary electrons corresponding to the variation of the angle of incidence.

Abstract translation: 测量样品表面的晶体取向，晶体系统等的方法具有以下步骤：用离子束照射样品; 测量由离子束照射产生的二次电子; 重复离子束的照射和二次电子的测量，其中离子束相对于试样的入射角各自变化; 并且基于对应于入射角的变化的二次电子量的变化来确定晶体状态。

公开(公告)号：US06855931B2

公开(公告)日：2005-02-15

申请号：US10815817

申请日：2004-04-02

Applicant: Tetsuya Sawahata ,  Mitsugu Sato

Inventor： Tetsuya Sawahata ,  Mitsugu Sato

IPC: H01J37/22 ,  G01N23/225 ,  G01Q30/02 ,  G01Q30/20 ,  G21K7/00 ,  H01J37/141 ,  H01J37/21 ,  H01J37/256 ,  G01N23/00 ,  H01J37/28

CPC classification number: H01J37/256 ,  G01N23/2252 ,  H01J37/141 ,  H01J2237/2561

Abstract: According to the present invention, there are newly provided in a scanning electron microscope with an in-lens system a first low-magnification mode that sets the current of the object lens to be zero or in a weak excitation state, and a second low-magnification mode that sets the current of the object lens to be a value that changes in proportion to the square root of the accelerating voltage. The scanning electron microscope has a configuration wherein normal sample image (secondary electron image) observation is performed in the first low-magnification mode, and it switches the first low-magnification mode to the second low-magnification mode when X-ray analysis is performed. As a result, both sample image (secondary electron image) observation and X-ray analysis can be performed in low-magnification mode.

Abstract translation: 根据本发明，在具有透镜系统的扫描电子显微镜中，新提供将物镜的电流设定为零或弱激励状态的第一低倍率模式， 将物镜的电流设定为与加速电压的平方根成比例地变化的值的倍率模式。 扫描电子显微镜具有在第一低倍率模式下进行正常的样本图像（二次电子图像）观察的结构，并且当执行X射线分析时，将第一低倍率模式切换到第二低倍率模式 。 结果，可以以低倍率模式进行样本图像（二次电子图像）观察和X射线分析。