公开(公告)号：US07974067B2

公开(公告)日：2011-07-05

申请号：US11514267

申请日：2006-09-01

Applicant: Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

Inventor： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01J2237/0206

Abstract: In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

Abstract translation: 在具有用于通过静电吸附力保持半导体晶片的静电卡盘和用于向静电卡盘施加静电吸附电压的DC电源的等离子体处理装置中，通过向装置提供信号检测器来抑制等离子体的异常放电， 检测预期在等离子体中发生异常放电的预见信号，以及基于预见信号控制ESC泄漏电流的控制器。 如果预见信号在规定范围之外，则进行控制以减小静电吸附电压的绝对值，从而抑制异常放电的发生。

公开(公告)号：US20070058322A1

公开(公告)日：2007-03-15

申请号：US11514267

申请日：2006-09-01

Applicant: Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

Inventor： Natsuko Ito ,  Mitsuo Yasaka ,  Fumihiko Uesugi ,  Yousuke Itagaki

IPC: H01T23/00

CPC classification number: H01L21/6833 ,  H01J2237/0206

Abstract: In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

Abstract translation: 在具有用于通过静电吸附力保持半导体晶片的静电卡盘和用于向静电卡盘施加静电吸附电压的DC电源的等离子体处理装置中，通过向装置提供信号检测器来抑制等离子体的异常放电， 检测预期在等离子体中发生异常放电的预见信号，以及基于预见信号控制ESC泄漏电流的控制器。 如果预见信号在规定范围之外，则进行控制以减小静电吸附电压的绝对值，从而抑制异常放电的发生。

公开(公告)号：US20050116726A1

公开(公告)日：2005-06-02

申请号：US11005339

申请日：2004-12-06

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki

IPC: G01B15/02 ,  H01J1/62 ,  G01R27/08 ,  H01J63/04

CPC classification number: G01B15/02 ,  H01J2237/2813

Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.

Abstract translation: 用于测量薄膜厚度的装置使得第一和第二能量的电子束撞击形成在硅衬底上的要测量的薄膜，并且测量在衬底中流动的电流的第一衬底电流值 被第一能量的电子束撞击并且当其被第二能量的电子束撞击时在衬底中流动的电流的第二衬底电流值。 薄膜测量装置获得指示薄膜厚度和参考功能之间的关系的参考数据，该基准函数具有作为第一能量的电子束冲击标准样品的情况下的衬底电流的变量和用于 电子束的第二能量冲击到标准样品，并且基于第一和第二衬底电流值计算测量的薄膜的厚度，考虑参考数据。

公开(公告)号：US06837936B2

公开(公告)日：2005-01-04

申请号：US10078357

申请日：2002-02-21

Applicant: Takeo Ushiki ,  Keizo Yamada ,  Yousuke Itagaki

Inventor： Takeo Ushiki ,  Keizo Yamada ,  Yousuke Itagaki

IPC: G01R31/28 ,  G03F7/20 ,  H01L21/027 ,  H01L21/66 ,  C23C16/00

CPC classification number: G03F7/70866 ,  G03F7/70933

Abstract: The semiconductor manufacturing device according to the present invention having a mechanical drive part which is moved in a vacuum device while holding a substrate includes at least one discharge port for introducing an inert gas into the vacuum device, and a flow rate control part for controlling the inert gas which is discharged into the vacuum device from the discharge port at a constant flow rate.

公开(公告)号：US20080041306A1

公开(公告)日：2008-02-21

申请号：US11769919

申请日：2007-06-28

Applicant: Yousuke ITAGAKI ,  Natsuko Ito ,  Fumihiko Uesugi

Inventor： Yousuke ITAGAKI ,  Natsuko Ito ,  Fumihiko Uesugi

IPC: B05C11/00

CPC classification number: C23C16/4404 ,  H01J37/09 ,  H01J37/16 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/022 ,  H01J2237/026

Abstract: An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d∈1/dm1) value of the dielectric material and ∈n m2(d∈2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ∈1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ∈2 is a permittivity of the dielectric deposit.

Abstract translation: 一种装置包括限定其中产生电场的室的壳体和设置在室中的内部构件。 内部构件的至少一部分由电介质材料形成。 在室中执行处理，使得在内部构件的至少一个部分上形成介电沉积物。 电介质材料的m 1（d∈1 / dm 1）值和∈nm2（d 设置介电沉积物的∈2 2/2 2 N值，以便适当地控制来自沉积物的颗粒的产生。 术语m 1是电介质材料的质量密度，ε1是电介质材料的介电常数，m 2是质量密度 的介电沉积物，ε2是介电沉积物的介电常数。

公开(公告)号：US06946857B2

公开(公告)日：2005-09-20

申请号：US10868582

申请日：2004-06-15

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC: G01B15/00 ,  G01B15/04 ,  G01B15/08 ,  G01N23/225 ,  G01N27/00 ,  G01R31/02 ,  G01R31/305 ,  G01R31/307 ,  G04B15/00 ,  H01J37/20 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more contact holes and/or vias wherein the electron beam includes a cross-section which is greater than the one or more contact holes. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current.

Abstract translation: 一方面，本发明是用于获得关于半导体晶片上的一个或多个接触孔和/或通孔的信息的系统和方法。 在这方面，在一个实施例中，该系统包括电子枪以在一个或多个接触孔和/或通孔上照射电子束，其中电子束包括大于一个或多个接触孔的横截面。 该系统还包括耦合到半导体晶片的电流测量装置可以测量补偿电流，其中响应于照射在一个或多个接触孔上的电子束产生补偿电流。 该系统还包括耦合到当前测量装置的数据处理器，以使用补偿电流来确定与一个或多个接触孔和/或过孔有关的信息。

公开(公告)号：US20050106803A1

公开(公告)日：2005-05-19

申请号：US11005330

申请日：2004-12-06

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC: H01L21/02 ,  H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67276

Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

Abstract translation: 半导体装置的生产管理系统包括半导体制造中心C，用于制造半导体器件的生产装置11a-11c，用于测量批次数据的在线测量装置12a-12c，存储生产方法数据的数据库2， 测量数据，对应于测量数据的过程步骤的规格，估计产量，批次输入日期和时间的数据，执行处理步骤的预定日期的数据，实际完成日期的数据 相应于半导体器件（芯片）的批号数据和包括用于计算估计产量的估计收益率操作单元1a的服务器1的每个步骤以及每个批次的半导体器件的预定完成日期的数据 ，其根据规格和测量数据是最终产量，以及用于执行半导体器件的生产管理的生产管理单元1b 由用户根据用户输入的各个数据和估计的收益进行排序，其中用户的用户终端不仅执行每个处理中的处理处理是否正常的判断，还估计最终数 的用户订购的正常产品，最终可以获得。

公开(公告)号：US06614244B2

公开(公告)日：2003-09-02

申请号：US10006363

申请日：2001-12-10

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC: G01R31305

CPC classification number: G01R31/307

Abstract: A semiconductor device inspecting apparatus capable of a high-precision nondestructive inspection with a reduction of external noises, by using a value of an area having no hole as a background value for a correction when measuring an average current, measuring the current in a current differential input amplifier constitution, automatically judging whether a result of the measurement is caused by a defect of the device or of the equipment on the basis of a measured current waveform, measuring a current value of electron beams, and storing and reusing a waiting time between irradiation with electron beams and stabilization of the current measurement value.

公开(公告)号：US08051799B2

公开(公告)日：2011-11-08

申请号：US11769919

申请日：2007-06-28

Applicant: Yousuke Itagaki ,  Natsuko Ito ,  Fumihiko Uesugi

Inventor： Yousuke Itagaki ,  Natsuko Ito ,  Fumihiko Uesugi

IPC: B05C11/00

CPC classification number: C23C16/4404 ,  H01J37/09 ,  H01J37/16 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/022 ,  H01J2237/026

Abstract: An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d∈1/dm1) value of the dielectric material and an m2(d∈2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ∈1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ∈2 is a permittivity of the dielectric deposit.

Abstract translation: 一种装置包括限定其中产生电场的室的壳体和设置在室中的内部构件。 内部构件的至少一部分由电介质材料形成。 在室中执行处理，使得在内部构件的至少一个部分上形成介电沉积物。 电介质材料的m1（d∈1/ dm1）值和电介质沉积物的m2（d∈2/ dm2）值被设定为使得从沉积物中产生的颗粒被适当地控制。 术语m1是介电材料的质量密度，ε1是介电材料的介电常数，m2是介电沉积物的质量密度，∈2是电介质沉积物的介电常数。

公开(公告)号：US07385195B2

公开(公告)日：2008-06-10

申请号：US11198780

申请日：2005-08-05

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC: G01R31/02

CPC classification number: H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

Abstract translation: 公开了一种用于获得关于半导体晶片上的一个或多个接触和/或通孔的信息的系统和方法。 在一个实施例中，该方法获得关于设置在半导体晶片中或设置在设置在半导体晶片上或上方的层中的一个或多个孔（例如，通孔或接触）的信息。 该实施例的方法包括用电子束照射一个或多个孔; 以及使用表示响应于用电子束照射所述一个或多个孔而产生的衬底电流的量的数据来确定与所述一个或多个孔的底部直径或底部圆周有关的信息。