公开(公告)号：US4795529A

公开(公告)日：1989-01-03

申请号：US109318

申请日：1987-10-19

Applicant: Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yutaka Kakehi ,  Kado Hirobe ,  Katsuyoshi Kudo

Inventor： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yutaka Kakehi ,  Kado Hirobe ,  Katsuyoshi Kudo

IPC: H05H1/02 ,  C23C16/517 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B05D3/06 ,  B44C1/22 ,  C23C14/00

CPC classification number: H01J37/32706 ,  C23C16/517 ,  H01L21/30655 ,  H01J2237/3348

Abstract: This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

Abstract translation: 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括在减压下制备具有临界电位等离子体的气体，并且改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压。 等离子体处理装置包括用于在减压下形成具有临界电位等离子体的气体的装置，以及用于改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压的装置。 根据本发明，蚀刻步骤和成膜步骤可以交替进行，并且可以缩短等离子体处理时间。

公开(公告)号：US12131886B2

公开(公告)日：2024-10-29

申请号：US18011830

申请日：2021-06-28

Applicant: Lam Research Corporation

Inventor： Ranadeep Bhowmick ,  Alexei Marakhtanov ,  Felix Leib Kozakevich ,  John Holland

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32119 ,  H01J2237/3348

Abstract: A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.

公开(公告)号：US20180053631A1

公开(公告)日：2018-02-22

申请号：US15783983

申请日：2017-10-13

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  James D. Carducci ,  Hamid Tavassoli ,  Olga Regelman ,  Ying Zhang

IPC: H01J37/32 ,  H01J37/06 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/06 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/334 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

公开(公告)号：US20170125217A1

公开(公告)日：2017-05-04

申请号：US15146133

申请日：2016-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  James D. Carducci ,  Hamid Tavassoli ,  Olga Regelman ,  Ying Zhang

IPC: H01J37/32 ,  H01J37/06

CPC classification number: H01J37/32174 ,  H01J37/06 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/334 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

公开(公告)号：US20150179402A1

公开(公告)日：2015-06-25

申请号：US14572626

申请日：2014-12-16

Applicant: FEI Company

Inventor： Ronald Kelley ,  Michael Moriarty ,  Stacey Stone ,  Jeffrey Blackwood

IPC: H01J37/305 ,  C23C14/30

CPC classification number: H01J37/3053 ,  B05D3/044 ,  C23C14/30 ,  G01N1/286 ,  G01N1/32 ,  G01N2001/2886 ,  H01J37/265 ,  H01J37/3056 ,  H01J2237/31745 ,  H01J2237/3348 ,  H01L21/02318

Abstract: A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.

Abstract translation: 提供了一种方法和装置，用于以减少或防止伪影的方式制备用于在带电粒子束系统中观察的样品。 在最终研磨之前或期间，使用带电粒子束沉积将材料沉积到样品上，这导致无伪影的表面。 实施例对于制备具有不同硬度的材料层的样品的SEM观察的截面是有用的。 实施例可用于制备薄TEM样品。

公开(公告)号：US08968838B2

公开(公告)日：2015-03-03

申请号：US13809784

申请日：2011-07-12

Applicant: Jean-Paul Booth ,  Erik Johnson

Inventor： Jean-Paul Booth ,  Erik Johnson

IPC: C23C16/509 ,  H01J37/32

CPC classification number: C23C16/509 ,  H01J37/32091 ,  H01J2237/3348

Abstract: A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.

Abstract translation: 提供一种用于激发包含衬底的电容耦合反应性等离子体反应器的至少一个电极的方法。 通过施加具有包括斜坡上升，高平台，斜坡下降和低平台的梯形波形的RF电压来激发电极。 可以通过调整斜坡的持续时间，斜坡下降的持续时间，梯形波形的振幅和重复率来控制等离子体密度。 可以通过调整梯形波形的高平台和低平台之间的幅度和相对持续时间来控制衬底上的离子能量分布函数。

公开(公告)号：US20150013908A1

公开(公告)日：2015-01-15

申请号：US14499341

申请日：2014-09-29

Applicant: Tokyo Electron Limited

Inventor： Eiichi NISHIMURA ,  Tadashi KOTSUGI ,  Fumiko YAMASHITA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31138

Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

Abstract translation: 一种蚀刻装置，包括：控制器，被配置为控制高频电源，以向安装台提供高频电力，用于使用从从安装台提供的预定气体产生的等离子体产生的等离子体来蚀刻形成在安装台上的基底层上的聚合物层 通过高频功率的气体供应源，聚合物层具有第一聚合物的周期性图案和通过自组装能够自组装的嵌段共聚物的第一聚合物和第二聚合物形成的第二聚合物， 设置高频功率以使用所产生的等离子体蚀刻聚合物层，使得除去第二聚合物并形成第一聚合物的图案，用于随后使用第一聚合物的图案作为掩模蚀刻基底层。

公开(公告)号：US20120214313A1

公开(公告)日：2012-08-23

申请号：US13214372

申请日：2011-08-22

Applicant: Yoshinobu Ooya ,  Akira Tanabe ,  Yoshinori Yasuta

Inventor： Yoshinobu Ooya ,  Akira Tanabe ,  Yoshinori Yasuta

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/02 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/3348

Abstract: There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.

Abstract translation: 提供了一种能够通过有效地控制RF偏置功能来响应于微处理的各种要求来优化等离子体处理的等离子体处理装置。 在该等离子体处理装置中，适用于产生电容耦合型等离子体的高频功率RFH从第三高频电源66施加到上电极48（或下电极16），并且将两个高频功率RFL1（0.8 MHz）和适合于吸引离子的RFL2（13MHz）分别从第一和第二高频电源36和38施加到基座16，以便控制从等离子体入射到半导体晶片W上的离子的能量。 控制单元88根据蚀刻处理的规格，条件或配方来控制第一和第二高频功率RFL1和RFL2的总功率和功率比。

公开(公告)号：US5385624A

公开(公告)日：1995-01-31

申请号：US800026

申请日：1991-11-29

Applicant: Yutaka Amemiya ,  Akihito Toda

Inventor： Yutaka Amemiya ,  Akihito Toda

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC classification number: H01J37/32091 ,  H01J37/32357 ,  H01J37/32623 ,  H01L21/31116 ,  H01J2237/3345 ,  H01J2237/3348

Abstract: A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O.sub.2 +CF.sub.4) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.

Abstract translation: 一种基板处理装置，包括设置有处理半导体晶片的部分的腔室和产生等离子体的另一部分。 用于将混合气体（O 2 + CF 4）供应到室中的等离子体产生部分中的供应商，用于将气体改变为等离子体的高频电极，用于捕获等离子体中的离子以将中性自由基引入晶片处理部分的离子阱;以及 用于排出晶片处理部的排气机构。

公开(公告)号：US5110438A

公开(公告)日：1992-05-05

申请号：US536548

申请日：1990-07-10

Applicant: Tadahiro Ohmi ,  Tadashi Shibata ,  Masaru Umeda

Inventor： Tadahiro Ohmi ,  Tadashi Shibata ,  Masaru Umeda

IPC: H01L21/28 ,  C23C14/22 ,  C23C14/34 ,  C23C14/40 ,  H01J37/32 ,  H01J37/34 ,  H01L21/00 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L21/67017 ,  H01J37/32082 ,  H01J37/32706 ,  H01J37/34 ,  H01J2237/32 ,  H01J2237/3348

Abstract: The reduced pressure surface treatment apparatus according the present invention comprises at least one vacuum chamber and an exhaust unit and a gas supply unit connected thereto, and it is characterized in that it is provided with a holder to hold the specimen, means to bombard the specimen with ions without depositing a thin film on said specimen surface, and means to control kinetic energy of said ions to a small value. The reduced pressure surface treatment method of this invention is characterized in that substances adsorbed on the wafer surface or natural oxide film layers are removed by impinging ions on the wafer surface under a vacuum condition.

Abstract translation: PCT No.PCT / JP89 / 00026 Sec。 371日期1990年7月10日 102（e）日1990年7月10日PCT 1990年1月12日提交PCT。根据本发明的减压表面处理装置包括至少一个真空室和排气单元以及与其连接的气体供应单元，其特征在于 由于设置有用于保持试样的保持器，用离子轰击试样而不在所述试样表面上沉积薄膜的装置，以及将所述离子的动能控制在较小值的装置。 本发明的减压表面处理方法的特征在于，通过在真空条件下在晶片表面上冲击离子来去除吸附在晶片表面或自然氧化物膜层上的物质。