公开(公告)号：US20110006208A1

公开(公告)日：2011-01-13

申请号：US12833750

申请日：2010-07-09

Applicant: Bert Henning Freitag ,  Georg Alexander Rosenthal ,  Daniel Woodrow Phifer, JR.

Inventor： Bert Henning Freitag ,  Georg Alexander Rosenthal ,  Daniel Woodrow Phifer, JR.

IPC: G01N23/00 ,  G21K5/08

CPC classification number: G01N23/2251 ,  G01N2223/611 ,  H01J37/20 ,  H01J37/26 ,  H01J2237/2003 ,  H01J2237/2008

Abstract: The invention describes a method for inspecting samples in an electron microscope. A sample carrier 500 shows electrodes 504, 507 connecting pads 505, 508 with areas A on which the sample is to be placed.After placing the sample on the sample carrier, a conductive pattern is deposited on the sample, so that voltages and currents can be applied to localized parts of the sample.Applying the pattern on the sample may be done with, for example, Beam Induced Deposition or ink-jet printing.The invention also teaches building electronic components, such as resistors, capacitors, inductors and active elements such as FET's in the sample.

Abstract translation: 本发明描述了一种在电子显微镜中检查样品的方法。 样品载体500显示连接焊盘505,508与待放置样品的区域A的电极504,507。 将样品置于样品载体上后，导电图案沉积在样品上，以便可以对样品的局部化部分施加电压和电流。 在样品上施加图案可以通过例如光束沉积或喷墨打印进行。 本发明还教导在样品中构建电子部件，例如电阻器，电容器，电感器和有源元件，例如FET。

公开(公告)号：US20100181480A1

公开(公告)日：2010-07-22

申请号：US12688095

申请日：2010-01-15

Applicant: Tomokazu SHIMAKURA ,  Masaki HASEGAWA

Inventor： Tomokazu SHIMAKURA ,  Masaki HASEGAWA

IPC: G01N23/225

CPC classification number: H01J37/026 ,  H01J37/04 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/153 ,  H01J2237/1536 ,  H01J2237/2008

Abstract: According to the present invention, a charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.

Abstract translation: 根据本发明，带电粒子束装置具有无限旋转的样品台和用于校正样品周边部分的电场失真的电场控制电极。 通过在旋转台的旋转中心处与保持器接收器接触的延迟电极将电压施加到无限可旋转的样品台上的样品。 通过向电场控制电极施加电压来改变电场控制电极上的等电位面，并且在此之后校正样品边缘处的等电位面，使得可以将样品观察到其边缘。

公开(公告)号：US20100103583A1

公开(公告)日：2010-04-29

申请号：US12259216

申请日：2008-10-27

Applicant: YI XIANG WANG ,  JUYING DOU ,  JUN JIANT ,  ZHENG FAN ,  QINGYU MENG

Inventor： YI XIANG WANG ,  JUYING DOU ,  JUN JIANT ,  ZHENG FAN ,  QINGYU MENG

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3174 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/24564

Abstract: An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process.

Abstract translation: 公开了当暴露于电子束照射时增加对晶片衬底的导电性的装置。 更具体地，提供了在晶片背面上击穿绝缘层的方法，以在继续进行接地工艺的同时显着减少晶片背面的损坏。

公开(公告)号：US07675300B2

公开(公告)日：2010-03-09

申请号：US11957835

申请日：2007-12-17

Applicant: Christof Baur ,  Robert J. Folaron ,  Adam Hartman ,  Philip C. Foster ,  Jay C. Nelson ,  Richard E. Stallcup, II

Inventor： Christof Baur ,  Robert J. Folaron ,  Adam Hartman ,  Philip C. Foster ,  Jay C. Nelson ,  Richard E. Stallcup, II

IPC: G01R31/305 ,  G01R31/02 ,  G01R31/26

CPC classification number: G01N1/28 ,  G01N1/32 ,  G01R31/307 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/2008 ,  H01J2237/206 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/28 ,  H01J2237/2817 ,  H01J2237/31745

Abstract: An apparatus including a positioner control device, a measuring device and a control routine. The positioner control device is communicatively coupled to a chamber of a charged particle beam device (CPBD) and is configured to individually manipulate each of a plurality of probes within the CPBD chamber to establish contact between ones of the plurality of probes and corresponding ones of a plurality of contact points of a sample positioned in the CPBD chamber. The measuring device is communicatively coupled to the CPBD and the positioner control device and is configured to perform one of a measurement and a detection of a characteristic associated with one of the plurality of contact points. The control routine is configured to at least partially automate control of at least one of the CPBD, the positioner control device and the measuring device.

Abstract translation: 一种包括定位器控制装置，测量装置和控制程序的装置。 定位器控制装置通信地耦合到带电粒子束装置（CPBD）的腔室，并且被配置为单独地操作CPBD室内的多个探针中的每一个，以建立多个探针中的一个探针和 位于CPBD室中的样品的多个接触点。 测量装置通信地耦合到CPBD和定位器控制装置，并被配置为执行与多个接触点之一相关联的特性的测量和检测中的一个。 控制程序被配置为至少部分地自动化对CPBD，定位器控制装置和测量装置中的至少一个的控制。

公开(公告)号：US20090230984A1

公开(公告)日：2009-09-17

申请号：US12471907

申请日：2009-05-26

Applicant: Eiichi HAZAKI ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

Inventor： Eiichi HAZAKI ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

IPC: G01R31/02

CPC classification number: G01R31/2891 ,  G01N23/225 ,  G01R31/2887 ,  H01J37/20 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/20221 ,  H01J2237/204 ,  H01J2237/24564 ,  H01J2237/2482

Abstract: For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

Abstract translation: 为了调整试样与探针之间的位置关系，通过它们之间的接触测量试样的电特性，将保持试样的试样台的基台和保持探针的探针架固定在第一位置，以测量 在第一位置处的探针和样本之间的位置关系，并且随后位于第二位置以测量其在第二位置处的位置关系，使得探针和样本在第二位置彼此接触，样本台和 探针支架能够在基台上在第一和第二位置中的每一个处相对于彼此移动，以调节探针与样本之间的位置关系，并且第二位置处的测量精度优于 第一名

公开(公告)号：US20080067381A1

公开(公告)日：2008-03-20

申请号：US11808247

申请日：2007-06-07

Applicant: Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

Inventor： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

IPC: G21K7/00

CPC classification number: H01J37/20 ,  G01R31/307 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2008 ,  H01J2237/20235 ,  H01J2237/20292 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/28

Abstract: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.

Abstract translation: 提供能够在适当条件下进行NVC（负电压对比度）模式和PVC（正电压对比度）模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。 将一次电子2照射到要检查的晶片6上，并且其XY照射位置被扫描。 来自待检查晶片的二次电子（或反射电子）10由电荷控制电极5控制，并由传感器11检测。 图像处理器将来自传感器11的检测信号转换为检测图像，将检测到的图像与预定参考图像进行比较，判断缺陷，总体控制部14从每个被检查晶片的配方信息中选择检查条件6， 施加到充电控制电极5的电压。 Z级8根据该电压设定待检查晶片6与充电控制电极5之间的距离。

公开(公告)号：US20080048699A1

公开(公告)日：2008-02-28

申请号：US11976238

申请日：2007-10-23

Applicant: Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

Inventor： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

IPC: G01R31/02

CPC classification number: G01R31/2891 ,  G01N23/225 ,  G01R31/2887 ,  H01J37/20 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/20221 ,  H01J2237/204 ,  H01J2237/24564 ,  H01J2237/2482

Abstract: For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

Abstract translation: 为了调整试样与探针之间的位置关系，通过它们之间的接触测量试样的电特性，将保持试样的试样台的基台和保持探针的探针架固定在第一位置，以测量 在第一位置处的探针和样本之间的位置关系，并且随后位于第二位置以测量其在第二位置处的位置关系，使得探针和样本在第二位置彼此接触，样本台和 探针支架能够在基台上在第一和第二位置中的每一个处相对于彼此移动，以调节探针与样本之间的位置关系，并且在第二位置处的测量精度优于 第一名

公开(公告)号：US12099076B2

公开(公告)日：2024-09-24

申请号：US17651583

申请日：2022-02-18

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Jiabao Chen

IPC: G01R1/04 ,  H01J37/20 ,  H01L21/683 ,  G01N23/2204

CPC classification number: G01R1/0408 ,  H01J37/20 ,  H01L21/6835 ,  G01N23/2204 ,  H01J2237/2008

Abstract: The present disclosure discloses a sample fixation mechanism for a test with a nano-probe, an apparatus for a test with a nano-probe, and a sample test method. The sample fixation mechanism includes a base having a first assembly surface; a holder having a second assembly surface matched with the first assembly surface, wherein the holder further has a fixation surface opposite to the second assembly surface, and the fixation surface is configured to be adhered and fixed with the sample; a lock structure having a locked state and an unlocked state, wherein in the locked state, the lock structure is capable of fixing the holder relative to the base, and in the unlocked state, the holder may be removed from the base.

公开(公告)号：US10054556B2

公开(公告)日：2018-08-21

申请号：US15339496

申请日：2016-10-31

Applicant: Hermes Microvision Inc.

Inventor： You-Jin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: A61N5/06 ,  G01N23/2251 ,  H05F3/02 ,  H01J37/20 ,  H01J37/02 ,  H01J37/28

CPC classification number: G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

公开(公告)号：US09952272B2

公开(公告)日：2018-04-24

申请号：US14958354

申请日：2015-12-03

Applicant: Nikhilesh Chawla ,  James E Mertens

Inventor： Nikhilesh Chawla ,  James E Mertens

IPC: G01N21/01 ,  G01R31/12 ,  H01J37/28 ,  H01J37/20 ,  G01R31/28

CPC classification number: G01R31/1218 ,  G01R31/2858 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008

Abstract: Systems and fixtures for mounting, under mechanical constraint, wire-like or fiber-like samples of a high aspect ratio and down to 100 micrometers in diameter are disclosed. A region of interest along the length of the sample resides between and beyond a mechanical constraint on either side, allowing access to the region of interest for a wide number of characterization probes. The fixture may provide electrical isolation between two retaining blocks by means of a dielectric support member. The design may achieve minimal thermal expansion along the length of the sample by the material selection for the dielectric support member. Electrical contact may be introduced to the sample through conductive constraints in the retaining blocks. The fixture may have a minimal size perpendicular to the length axis of the sample to facilitate high probe fluxes when a diverging probe is used. The fixture may provide high x-ray transparency between the retaining blocks. The systems and fixtures as described therefore may provide a means for performing electrical and thermal testing on samples, including but not limited to solder butt-joints, across multimodal in situ characterization and imaging techniques to analyze dynamic electromigration.