公开(公告)号：US08826856B2

公开(公告)日：2014-09-09

申请号：US13058557

申请日：2009-08-17

Applicant: Ekishu Nagae ,  Yousong Jiang ,  Ichiro Shiono ,  Tadayuki Shimizu ,  Tatsuya Hayashi ,  Makoto Furukawa ,  Takanori Murata

Inventor： Ekishu Nagae ,  Yousong Jiang ,  Ichiro Shiono ,  Tadayuki Shimizu ,  Tatsuya Hayashi ,  Makoto Furukawa ,  Takanori Murata

IPC: C23C16/00 ,  C23C16/50 ,  C23C14/22 ,  C23C14/10 ,  C23C14/08

CPC classification number: C23C14/22 ,  C23C14/083 ,  C23C14/10 ,  C23C14/221 ,  C23C14/225 ,  H01J2237/0041 ,  H01J2237/3132

Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.5 inclusive and 1.2 inclusive.

Abstract translation: 光学薄膜蒸镀装置和方法能够通过将气相沉积物质蒸镀在真空容器（10）内的基板（14）上来制造光学薄膜。 圆顶形保持器（12）设置在真空容器（10）内并保持基板（14）。 驱动器旋转圆顶形保持器（12）。 气相沉积源（34）与衬底（14）相对设置。 离子源（38）将离子照射到衬底（14）上。 中和器（40）将电子照射到衬底（14）上。 离子源（38）以垂直于每个基板（14）的表面的线与离子源（38）照射的轴线之间成角度地设置。 角度介于8°至40°之间。 （i）圆顶状保持器（12）的旋转轴的中心与（ii）离子源（38）的中心之间的垂直方向上的距离相对于圆顶状保持器的直径的比例 （12），介于0.5和0.5之间。

公开(公告)号：US08742374B2

公开(公告)日：2014-06-03

申请号：US13970406

申请日：2013-08-19

Applicant: Nissin Ion Equipment Co., Ltd

Inventor： Masao Naito

IPC: H01J37/317 ,  H01J37/20 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/0041 ,  H01J2237/0042 ,  H01J2237/0455 ,  H01J2237/24542

Abstract: A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.

Abstract translation: 一种混合离子注入装置，其配置有成形掩模，该成型掩模在短边方向上成形带状离子束IB的两个边缘，测量沿离子束IB的长边方向的电流分布的轮廓仪 通过成形掩模和电子束供给单元，其在通过成形掩模进行成形之前，在离子束IB的长边方向上的整个区域提供电子束EB，其中电子束供给单元改变供给 根据分析仪的测量结果，在离子束1B的长边方向上的每个位置处的电子束EB的剂量。

公开(公告)号：US08686640B2

公开(公告)日：2014-04-01

申请号：US13672871

申请日：2012-11-09

Applicant: E/G Electro-Graph Inc.

Inventor： Michael Vella

IPC: H05H1/50

CPC classification number: H05H1/50 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0041

Abstract: An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams.

Abstract translation: 离子束处理系统包括具有磁力洪水系统的等离子体发生器。 提供了用于减小等离子体放电装置的离子束输送区域中的横向磁场的磁体，以便控制充电损坏或者中和离子束处理和半导体离子注入中的束空间电荷。 该系统特别适用于带状光束的光束线。

公开(公告)号：US08466415B2

公开(公告)日：2013-06-18

申请号：US12092783

申请日：2006-11-07

Applicant: Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

Inventor： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

IPC: H01L21/46 ,  H01J37/26

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/67109 ,  Y10T29/49002

Abstract: Methods for using sub-100V electron beam landing energies for performing circuit edit operations. Circuit edit operations can include imaging for navigation and etching in the presence of a suitable gas. Low landing energies can be obtained by modifying a decelerator system of native FESEM equipment, or by using biasing means near the sample surface for decelerating electrons of the primary beam. At low landing energies near the operating voltage of a semiconductor circuit, voltage contrast effects can be visually seen for enhancing operator navigation. Low landing energies can be used during etching processes for minimizing the interaction volume of the beam and obtaining accurate and localized etching.

Abstract translation: 使用亚100V电子束着陆能量进行电路编辑操作的方法。 电路编辑操作可以包括在存在合适气体的情况下用于导航和蚀刻的成像。 通过修改天然FESEM设备的减速器系统，或者通过在样品表面附近使用偏置装置来减速主光束的电子，可以获得低着陆能量。 在靠近半导体电路的工作电压的低着陆能量下，可以看到电压对比效应，以增强操作者的导航。 在蚀刻过程中可以使用低着陆能量来最小化光束的相互作用体积并获得精确和局部化的蚀刻。

公开(公告)号：US08143590B2

公开(公告)日：2012-03-27

申请号：US12838309

申请日：2010-07-16

Applicant: Tsai-Cheng Wang ,  Chin-Chung Yang ,  An-Ting Hsiao ,  Yu-Li Tsai

Inventor： Tsai-Cheng Wang ,  Chin-Chung Yang ,  An-Ting Hsiao ,  Yu-Li Tsai

IPC: H01J49/10 ,  H01J37/08 ,  H01J7/24

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/061

Abstract: An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.

Abstract translation: 离子源装置具有离子源组件和中和器。 离子源组件具有主体，散热装置，阳极块和气体分配器。 散热装置具有热转印板和第一热侧片。 热转印板具有顶部，突起和环形破坏凹部。 突起形成在热转印板的顶部。 破裂凹部围绕突起径向地形成。 第一热侧片围绕突起。 气体分配器牢固地安装在突起中。 因为突起位于气体分配器和第一热侧片之间，并且破裂凹部围绕突起径向地形成，所以累积的离子，分子和沉积膜颗粒被纵向破坏，并且不会在气体分布器和 第一热侧片。

公开(公告)号：US20110300599A1

公开(公告)日：2011-12-08

申请号：US13101757

申请日：2011-05-05

Applicant: Joseph Khoury ,  Laurence Berlowitz Tarrant ,  Sean R. Kirkpatrick ,  Richard C. Svrluga

Inventor： Joseph Khoury ,  Laurence Berlowitz Tarrant ,  Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: C12N11/08 ,  H05H3/02

CPC classification number: A61L27/18 ,  A61B2017/00969 ,  A61L27/38 ,  A61L2400/18 ,  A61L2430/10 ,  A61L2430/40 ,  H01J37/05 ,  H01J37/317 ,  H01J2237/0041 ,  H01J2237/053 ,  H01J2237/0812 ,  H01J2237/0827 ,  H01J2237/20207 ,  H01J2237/20214 ,  C08L71/12 ,  C08L71/00

Abstract: The invention provides for a method of improving bioactivity of a surface of an implantable object. The invention also provides for a method of improving bioactivity of a surface of biological laboratory ware. The invention further provides a method of attaching cells to an object. The invention even further provides for a method of preparing an object for medical implantation. The invention also provides for an article with attached cell, and for an article for medical implantation. Improvements result from the application of gas-cluster ion beam technology and from the application of neutral beam technology, wherein neutral beams are derived from accelerated gas-cluster ion beams.

Abstract translation: 本发明提供了一种提高可植入物体表面的生物活性的方法。 本发明还提供了一种提高生物实验室器皿表面生物活性的方法。 本发明还提供了将细胞附着到对象的方法。 本发明甚至进一步提供了一种制备用于医学植入的物体的方法。 本发明还提供具有附着细胞的物品和用于医疗植入物品。 改进的结果是应用气体束离子束技术和中性束技术的应用，其中中性束源自加速气体簇离子束。

公开(公告)号：US20110139981A1

公开(公告)日：2011-06-16

申请号：US13059537

申请日：2009-08-08

Applicant: Ritsuo Fukaya ,  Nobuhiro Okai ,  Koki Miyahara ,  Zhigang Wang

Inventor： Ritsuo Fukaya ,  Nobuhiro Okai ,  Koki Miyahara ,  Zhigang Wang

IPC: G01N23/225 ,  G01N23/00

CPC classification number: H01J37/026 ,  H01J37/09 ,  H01J37/15 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/0045 ,  H01J2237/0458

Abstract: An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.

Abstract translation: 本发明的目的是提供一种扫描电子显微镜，其目的在于可以控制从样品与其他部件发射的电子的碰撞产生的电子的量，以及使用电子量的控制的样品充电控制方法。 为了实现该目的，提出了一种扫描电子显微镜，其包括电子束可以通过的多个孔，以及用于切换电子束的孔的机构，以及通过切换孔来控制样品充电的方法。 多个孔是至少两个孔。 分别具有不同二次电子发射效率的部分设置在与样品相对的一侧上的至少两个孔的周边部分上。 可以通过切换孔来控制从样品发射的电子的碰撞产生的电子的量。

公开(公告)号：US07935944B2

公开(公告)日：2011-05-03

申请号：US12304241

申请日：2007-06-12

Applicant: Junzo Ishikawa ,  Dan Nicolaescu ,  Yasuhito Gotoh ,  Shigeki Sakai

Inventor： Junzo Ishikawa ,  Dan Nicolaescu ,  Yasuhito Gotoh ,  Shigeki Sakai

IPC: G21G1/10

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

Abstract: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).

Abstract translation: 离子束照射装置具有设置在离子束2的路径附近并发射电子的场致发射电子源10.场致发射电子源10沿着形成的入射角的方向 由电子源10发射的电子12和与离子束2的行进方向平行的方向在-15度的范围内。 至+45度 （离子束2的向内方向为+，向外方向为 - ）。

公开(公告)号：US07911120B2

公开(公告)日：2011-03-22

申请号：US10497894

申请日：2002-12-06

Applicant: Ana Lacoste ,  Jacques Pelletier ,  Yves Alban-Marie Arnal

Inventor： Ana Lacoste ,  Jacques Pelletier ,  Yves Alban-Marie Arnal

IPC: H01J7/24

CPC classification number: H01J37/077 ,  H01J3/025 ,  H01J2237/0041

Abstract: The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D=1/β √2πme/mi exp (−½), wherein: β is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.

Abstract translation: 本发明涉及提供可调节能量电子束的源，包括由具有第一值（S1）的内表面的外壳（1）和具有第二值的表面的抽出栅极（2）组成的等离子体室（P） 值（S2），门电位与外壳不同，可调。 本发明的特征在于等离子体被激发并限制在多极或多极磁结构中，第二值（S2）超过第一值（S1）的比接近于：D = 1 /＆bgr; √2＆pgr; me / mi exp（-½），其中：＆bgr; 是等离子体P的电子的比例，me是电子质量，mi是带正电荷的离子的质量。

公开(公告)号：US20110012033A1

公开(公告)日：2011-01-20

申请号：US12835138

申请日：2010-07-13

Applicant: Neil K. Colvin

Inventor： Neil K. Colvin

IPC: H01J37/317 ,  H01J37/02

CPC classification number: H01J37/3171 ,  H01J3/40 ,  H01J37/026 ,  H01J37/09 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.

Abstract translation: 提供了用于减少离子注入系统中的颗粒污染的装置。 该装置具有外壳，其具有入口，出口和至少一个百叶窗，其中限定有多个百叶窗。 离子注入系统的束线通过入口和出口，其中至少一个百叶窗侧的多个百叶窗被配置为机械地过滤沿着束线行进的离子束的边缘。 外壳可以具有两个百叶窗和百叶窗顶部，其中当垂直于束线测量时，外壳的入口和出口的相应宽度通常由两个百叶窗相对于彼此的位置来限定。 一个或多个百叶窗侧面可以可调节地安装，其中外壳的入口和出口中的一个或多个的宽度是可控的。