公开(公告)号：US09360776B2

公开(公告)日：2016-06-07

申请号：US14168212

申请日：2014-01-30

申请人： V TECHNOLOGY CO., LTD.

发明人： Yoshiaki Nomura ,  Toshinari Arai

IPC分类号： G01B11/00 ,  G03B27/32 ,  G03B27/74 ,  G03F9/00 ,  H01L21/68 ,  G03F7/20

CPC分类号： G03F9/7015 ,  G03F7/70791 ,  G03F9/00 ,  G03F9/7019 ,  H01L21/682

摘要： An alignment correction method includes: the step of detecting coordinates of a first observation point 14 and a second observation point 15 set in advance on a substrate to be exposed 1 that is being scanned in a scanning direction A, in order to observe an alignment deviation of the substrate to be exposed 1; the step of computing a correction amount based on a deviation between the detected coordinates and a reference line set in advance according to the first observation point 14 and the second observation point 15; and the step of correcting alignment of a subsequent substrate to be exposed 1 based on the computed correction amount.

摘要翻译： 对准校正方法包括：检测在扫描方向A上被扫描的待曝光基板1上预先设定的第一观察点14和第二观察点15的坐标的步骤，以观察取向偏差 要暴露的基材1; 基于检测到的坐标与根据第一观察点14和第二观察点15预先设定的参考线之间的偏差来计算校正量的步骤; 以及基于所计算的校正量来校正待曝光的衬底1的对准的步骤。

公开(公告)号：US09082661B2

公开(公告)日：2015-07-14

申请号：US14514467

申请日：2014-10-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yen-Di Tsen ,  Shin-Rung Lu ,  Jong-I Mou

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/67063 ,  H01L21/67092

摘要： A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values.

摘要翻译： 一种方法包括在多个基板上执行半导体制造工艺。 多个基板被分成第一子集和第二子集。 在多个基板的第二子集上执行返工处理，但不在第一子集上。 针对多个基板的第一和第二子集中的每个相应的一个计算出用于光刻工艺的至少一个曝光参数的相应平均值。 应用扫描器覆盖校正和平均校正以暴露已经执行返工处理的第二多个基板。 平均校正基于计算的平均值。

公开(公告)号：US20150170904A1

公开(公告)日：2015-06-18

申请号：US14585457

申请日：2014-12-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yen-Di TSEN ,  Yi-Ping HSIEH ,  Chen-Yen HUANG ,  Shin-Rung LU ,  Jong-I MOU

IPC分类号： H01L21/027 ,  H01L21/66

CPC分类号： G03F7/70633 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/0274 ,  H01L22/12 ,  H01L22/20

摘要： A method of processing first and second semiconductor wafers is provided. Each of the first and second semiconductor wafers has a first layer and a second layer over the first layer. A first lithographic process is performed on the first layer over the first semiconductor wafer using a first inter-field correction and a first intra-field correction. An overlay error of the first lithographic process is determined. A second inter-field correction and a second intra-field correction are computed based on the first inter-field correction, the first intra-field correction, and the measured overlay error. A second lithographic process is performed on the second layer over the second semiconductor wafer, based on the second inter-field correction and the second intra-field correction.

摘要翻译： 提供了一种处理第一和第二半导体晶片的方法。 第一和第二半导体晶片中的每一个在第一层上具有第一层和第二层。 使用第一场间校正和第一场内校正在第一半导体晶片上的第一层上执行第一光刻处理。 确定第一光刻工艺的覆盖误差。 基于第一场间校正，第一场校正和测量的重叠误差来计算第二场校正和第二场校正。 基于第二场间校正和第二场内校正，在第二半导体晶片上的第二层上执行第二光刻处理。

公开(公告)号：US20150027636A1

公开(公告)日：2015-01-29

申请号：US14514467

申请日：2014-10-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yen-Di TSEN ,  Shin-Rung LU ,  Jong-I MOU

IPC分类号： H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/67063 ,  H01L21/67092

摘要： A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values.

摘要翻译： 一种方法包括在多个基板上执行半导体制造工艺。 多个基板被分成第一子集和第二子集。 在多个基板的第二子集上执行返工处理，但不在第一子集上。 针对多个基板的第一和第二子集中的每个相应的一个计算出用于光刻工艺的至少一个曝光参数的相应平均值。 应用扫描器覆盖校正和平均校正以暴露已经执行返工处理的第二多个基板。 平均校正基于计算的平均值。

公开(公告)号：US08889434B2

公开(公告)日：2014-11-18

申请号：US13716340

申请日：2012-12-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yen-Di Tsen ,  Shin-Rung Lu ,  Jong-I Mou

IPC分类号： H01L21/00 ,  H01L21/66

CPC分类号： H01L22/12 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/67063 ,  H01L21/67092

摘要： A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values.

摘要翻译： 一种方法包括在多个基板上执行半导体制造工艺。 多个基板被分成第一子集和第二子集。 在多个基板的第二子集上执行返工处理，但不在第一子集上。 对于多个基板的第一和第二子集中的每个相应的一个，计算光刻工艺的至少一个曝光参数的相应平均值。 应用扫描器覆盖校正和平均校正以暴露已经执行返工处理的第二多个基板。 平均校正基于计算的平均值。

公开(公告)号：US20140168624A1

公开(公告)日：2014-06-19

申请号：US13907792

申请日：2013-05-31

申请人： Samsung Display Co., Ltd.

发明人： Jin-Hong Jeun ,  Seok-Joo Lee ,  Jung-Hun Yeon

IPC分类号： G03F7/20

CPC分类号： H01L51/0013 ,  G03F9/7019

摘要： An exposure apparatus capable of preventing a reduction in its accuracy due to, for example, the influence of aging or the influence of heat is disclosed. Also disclosed is a method of controlling the same, and an alignment method for exposure. In one aspect, the exposure apparatus includes a main stage for adjusting a position of a substrate, a beam irradiation unit for irradiating a beam onto a mask, and a beam monitoring unit having a position fixed with respect to the main stage, and for recognizing the beam emitted from the beam irradiation unit and passed through one pattern of the mask.

摘要翻译： 公开了能够防止由于老化的影响或热的影响引起的精度降低的曝光装置。 还公开了其控制方法和曝光对准方法。 一方面，曝光装置包括用于调整基板的位置的主台，用于将光束照射到掩模上的光束照射单元和具有相对于主平台固定的位置的光束监视单元，并且用于识别 从光束照射单元发射的光束并通过掩模的一个图案。

公开(公告)号：US08687167B2

公开(公告)日：2014-04-01

申请号：US13009232

申请日：2011-01-19

申请人： Alexander Viktorovych Padiy ,  Boris Menchtchikov

发明人： Alexander Viktorovych Padiy ,  Boris Menchtchikov

IPC分类号： G03B27/68 ,  G03B27/42

CPC分类号： G03F7/70616 ,  G03F7/70516 ,  G03F7/70525 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7046

摘要： A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

摘要翻译： 方法控制光刻设备的扫描功能。 使用第一对齐策略。 暴露监视器晶片以确定与扫描功能有关的基线控制参数。 从监视器晶片周期性地检索基线控制参数。 参数漂移由基线控制参数决定。 根据确定采取纠正措施。 使用与第一对准策略不同的第二对准策略来曝光生产晶片。 校正动作被修改，以便基本上更接近如果在暴露监视器晶片时已经使用第二对准策略将会进行的校正。

公开(公告)号：US08614798B2

公开(公告)日：2013-12-24

申请号：US13910712

申请日：2013-06-05

申请人： Micronic Mydata AB

发明人： Anders Svensson ,  Fredrik Jonsson

IPC分类号： G01B11/30 ,  G01B11/14

CPC分类号： G03F9/7019 ,  G03F7/70775 ,  G03F7/7085 ,  G03F9/7049 ,  G03F9/7076

摘要： A pattern generator includes: a writing tool and a calibration system. The writing tool is configured to generate a pattern on a workpiece arranged on a stage. The calibration system is configured to determine a correlation between a coordinate system of the writing tool and a coordinate system of a calibration plate on one of the stage and the workpiece. The calibration system is also configured to determine the correlation at least partly based on an optical correlation signal, or pattern, in a form of at least one optical beam being reflected from at least one reflective pattern on the surface of the calibration plate.

公开(公告)号：US08570535B2

公开(公告)日：2013-10-29

申请号：US13064067

申请日：2011-03-03

申请人： Anders Svensson ,  Fredrik Jonsson

发明人： Anders Svensson ,  Fredrik Jonsson

IPC分类号： G01B11/14

CPC分类号： G03F9/7019 ,  G03F7/70775 ,  G03F7/7085 ,  G03F9/7049 ,  G03F9/7076

摘要： A pattern generator includes: a writing tool and a calibration system. The writing tool is configured to generate a pattern on a workpiece arranged on a stage. The calibration system is configured to determine a correlation between a coordinate system of the writing tool and a coordinate system of a calibration plate on one of the stage and the workpiece. The calibration system is also configured to determine the correlation at least partly based on an optical correlation signal, or pattern, in a form of at least one optical beam being reflected from at least one reflective pattern on the surface of the calibration plate.

摘要翻译： 图案生成器包括：书写工具和校准系统。 写入工具被配置为在布置在平台上的工件上生成图案。 校准系统被配置为确定书写工具的坐标系和标准板在台面和工件之一上的坐标系之间的相关性。 校准系统还被配置为至少部分地基于光学相关信号或图案，以至少一个光束的形式确定相关性，该至少一个光束从校准板的表面上的至少一个反射图案反射。

公开(公告)号：US20130229638A1

公开(公告)日：2013-09-05

申请号：US13411245

申请日：2012-03-02

申请人： Li-Jui Chen ,  Fu-Jye Liang ,  Hsueh-Hung Wu

发明人： Li-Jui Chen ,  Fu-Jye Liang ,  Hsueh-Hung Wu

IPC分类号： G03B27/42

CPC分类号： G03F9/7096 ,  G03F9/7019

摘要： Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.

摘要翻译： 公开了一种光刻系统。 光刻系统包括设计用于对涂覆在集成电路基板上的辐射敏感材料层进行曝光处理的光刻曝光工具; 与光刻曝光工具耦合的对准模块，设计用于对准测量，并且被配置为将集成电路基板传送到光刻曝光工具; 以及设计用于相对于光刻曝光校准对准模块的对准校准模块。