公开(公告)号：US20160349633A1

公开(公告)日：2016-12-01

申请号：US14725339

申请日：2015-05-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd

发明人： Chen-Yen HUANG ,  Ai-Jen HUNG ,  Shin-Rung LU ,  Yen-Di TSEN

IPC分类号： G03F9/00

CPC分类号： G03F9/7019 ,  G03F7/70141 ,  G03F7/70208 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  G03F9/7073

摘要： A calibration apparatus is provided. The calibration apparatus includes a wafer carrier configured to support a substrate with a patterned layer. The patterned layer includes a first exposure area and remaining exposure areas, and each of the first and the remaining exposure areas includes a first checking mark. The calibration apparatus also includes a measurement device configured to obtain a first exposure value of the first checking mark of the first exposure area by measuring the first checking mark of the first exposure area. The calibration apparatus also includes a processing module configured to calculate first calculated values of the first checking marks of the remaining exposure areas according to the first exposure value and a standard file. The illumination device is adjusted by an adjustment device of the lithography apparatus according to the first calculated values during a lithography process.

摘要翻译： 提供校准装置。 校准装置包括被配置为用图案化层支撑衬底的晶片载体。 图案化层包括第一曝光区域和剩余曝光区域，并且第一和剩余曝光区域中的每一个包括第一检查标记。 校准装置还包括：测量装置，被配置为通过测量第一曝光区域的第一检查标记来获得第一曝光区域的第一检验标记的第一曝光值。 校准装置还包括处理模块，其被配置为根据第一曝光值和标准文件计算剩余曝光区域的第一检验标记的第一计算值。 根据光刻工艺中的第一计算值，通过光刻设备的调节装置调节照明装置。

公开(公告)号：US20140170782A1

公开(公告)日：2014-06-19

申请号：US13716340

申请日：2012-12-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yen-Di TSEN ,  Shin-Rung LU ,  Jong-I MOU

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/67063 ,  H01L21/67092

摘要： A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values.

摘要翻译： 一种方法包括在多个基板上执行半导体制造工艺。 多个基板被分成第一子集和第二子集。 在多个基板的第二子集上执行返工处理，但不在第一子集上。 对于多个基板的第一和第二子集中的每个相应的一个，计算光刻工艺的至少一个曝光参数的相应平均值。 应用扫描器覆盖校正和平均校正以暴露已经执行返工处理的第二多个基板。 平均校正基于计算的平均值。

公开(公告)号：US20150170904A1

公开(公告)日：2015-06-18

申请号：US14585457

申请日：2014-12-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yen-Di TSEN ,  Yi-Ping HSIEH ,  Chen-Yen HUANG ,  Shin-Rung LU ,  Jong-I MOU

IPC分类号： H01L21/027 ,  H01L21/66

CPC分类号： G03F7/70633 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/0274 ,  H01L22/12 ,  H01L22/20

摘要： A method of processing first and second semiconductor wafers is provided. Each of the first and second semiconductor wafers has a first layer and a second layer over the first layer. A first lithographic process is performed on the first layer over the first semiconductor wafer using a first inter-field correction and a first intra-field correction. An overlay error of the first lithographic process is determined. A second inter-field correction and a second intra-field correction are computed based on the first inter-field correction, the first intra-field correction, and the measured overlay error. A second lithographic process is performed on the second layer over the second semiconductor wafer, based on the second inter-field correction and the second intra-field correction.

摘要翻译： 提供了一种处理第一和第二半导体晶片的方法。 第一和第二半导体晶片中的每一个在第一层上具有第一层和第二层。 使用第一场间校正和第一场内校正在第一半导体晶片上的第一层上执行第一光刻处理。 确定第一光刻工艺的覆盖误差。 基于第一场间校正，第一场校正和测量的重叠误差来计算第二场校正和第二场校正。 基于第二场间校正和第二场内校正，在第二半导体晶片上的第二层上执行第二光刻处理。

公开(公告)号：US20150027636A1

公开(公告)日：2015-01-29

申请号：US14514467

申请日：2014-10-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yen-Di TSEN ,  Shin-Rung LU ,  Jong-I MOU

IPC分类号： H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  G03F9/7003 ,  G03F9/7019 ,  H01L21/67063 ,  H01L21/67092

摘要： A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values.

摘要翻译： 一种方法包括在多个基板上执行半导体制造工艺。 多个基板被分成第一子集和第二子集。 在多个基板的第二子集上执行返工处理，但不在第一子集上。 针对多个基板的第一和第二子集中的每个相应的一个计算出用于光刻工艺的至少一个曝光参数的相应平均值。 应用扫描器覆盖校正和平均校正以暴露已经执行返工处理的第二多个基板。 平均校正基于计算的平均值。