摘要:
An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
摘要:
A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least two of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要:
An immersion lithography system, comprising a lens unit configured to project a pattern from an end thereof and onto a wafer, a hood unit configured to confine an immersion fluid to a region of the wafer surrounding the end of the lens unit, a wafer stage configured to position the wafer proximate the end of the lens unit, and at least one of an image capturing apparatus and a scattering light detection apparatus, wherein the image capturing apparatus is coupled to the wafer stage and is configured to capture an image of a surface of the hood unit proximate the wafer stage, and wherein the scattering light detection apparatus is proximate the end of the lens unit and the hood unit and is configured to detect particles on a surface of the wafer stage.
摘要:
A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least one of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要:
A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.
摘要:
A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
摘要:
Within a Fabry-Perot filter apparatus, a method for fabricating the Fabry-Perot filter apparatus and a method for operating the Fabry-Perot filter apparatus, there is employed a Fabry-Perot filter and at least one color filter layer, both assembled over a substrate and covering at least two optical transducer elements which are formed within the substrate. Within the foregoing apparatus and methods, the at least one color filter layer comprises at least two color filter elements of separate color, each registered with a separate optical transducer element within the at least two optical transducer elements. The apparatus and methods provide for enhanced optical discrimination properties.
摘要:
Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.
摘要:
Disclosed is a lithography system. The lithography system includes a radiation source for providing radiation energy; a reticle stage configured to hold a reticle; an imaging lens module configured to direct the radiation energy onto a substrate to form an image of the reticle; and a leveling sensor configured to receive a leveling signal from an exposure field of the reticle secured on the reticle stage.
摘要:
Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.