-
1.发明授权Micro-etching method to replicate alignment marks for semiconductor wafer photolithography 有权用于复制半导体晶片光刻的对准标记的微蚀刻方法公开(公告)号：US07338909B2
公开(公告)日：2008-03-04
申请号：US10872238
申请日：2004-06-18
申请人： Yu-Liang Lin , Henry Lo , Chung-Long Chang , Gorge Huang , Tony Lu , Gnesh Yeh , Candy Liang , Chun-Hsien Lin , Mei Sheng Zhou , Sunny Su , Ai-Sen Liu , Cheng-Lin Huang , Li-Jui Chen , Shih Che Wang
发明人： Yu-Liang Lin , Henry Lo , Chung-Long Chang , Gorge Huang , Tony Lu , Gnesh Yeh , Candy Liang , Chun-Hsien Lin , Mei Sheng Zhou , Sunny Su , Ai-Sen Liu , Cheng-Lin Huang , Li-Jui Chen , Shih Che Wang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L23/544 , H01L21/31111 , H01L21/67282 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
摘要翻译： 一种用于局部蚀刻衬底区域的方法和装置，该方法包括提供包含工艺表面的衬底; 在工艺表面上沉积材料层; 以及施加湿蚀刻剂以覆盖所述工艺表面的目标蚀刻部分，同时排除相邻的周围区域以选择性地蚀刻覆盖所述目标蚀刻部分的所述材料层。
-
2.发明申请Micro-etching method to replicate alignment marks for semiconductor wafer photolithography 有权用于复制半导体晶片光刻的对准标记的微蚀刻方法公开(公告)号：US20050282396A1
公开(公告)日：2005-12-22
申请号：US10872238
申请日：2004-06-18
申请人： Yu-Liang Lin , Henry Lo , Chung-Long Chang , Gorge Huang , Tony Lu , Gnesh Yeh , Candy Liang , Chun-Hsien Lin , Mei Sheng Zhou , Sunny Wu , Ai-Sen Liu , Cheng-Lin Huang , Li-Jui Chen , Shih Wang
发明人： Yu-Liang Lin , Henry Lo , Chung-Long Chang , Gorge Huang , Tony Lu , Gnesh Yeh , Candy Liang , Chun-Hsien Lin , Mei Sheng Zhou , Sunny Wu , Ai-Sen Liu , Cheng-Lin Huang , Li-Jui Chen , Shih Wang
IPC分类号： H01L21/00 , H01L21/302 , H01L21/311 , H01L21/336 , H01L21/461 , H01L23/544
CPC分类号： H01L23/544 , H01L21/31111 , H01L21/67282 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
摘要翻译： 一种用于局部蚀刻衬底区域的方法和装置，该方法包括提供包含工艺表面的衬底; 在工艺表面上沉积材料层; 以及施加湿蚀刻剂以覆盖所述工艺表面的目标蚀刻部分，同时排除相邻的周围区域以选择性地蚀刻覆盖所述目标蚀刻部分的所述材料层。
-
搜索结果
2 条记录 (耗时 0.009 秒)
