发明申请
- 专利标题: SYSTEM AND METHOD FOR LITHOGRAPHY PATTERNING
- 专利标题(中): 系统和方法进行图像绘制
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申请号: US13411245申请日: 2012-03-02
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公开(公告)号: US20130229638A1公开(公告)日: 2013-09-05
- 发明人: Li-Jui Chen , Fu-Jye Liang , Hsueh-Hung Wu
- 申请人: Li-Jui Chen , Fu-Jye Liang , Hsueh-Hung Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03B27/42
- IPC分类号: G03B27/42
摘要:
Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.
公开/授权文献
- US09360778B2 System and method for lithography patterning 公开/授权日:2016-06-07
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