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    MASK PLATE, PHOTO-ALIGNMENT METHOD AND LIQUID CRYSTAL DISPLAY DEVICE
    11.
    发明申请
    MASK PLATE, PHOTO-ALIGNMENT METHOD AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开

    公开(公告)号：US20170242334A1

    公开(公告)日：2017-08-24

    申请号：US15588979

    申请日：2017-05-08

    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.

    Inventor： Jie SUN

    IPC: G03F1/38

    CPC classification number: G03F1/38 ,  G02F1/133788 ,  G02F2001/134345 ,  G03F7/203 ,  G03F7/70058

    Abstract: The disclosure is related to a photo-alignment method, comprising the following steps. A top panel and a bottom panel each with an alignment film are provided; a mask plate for shielding the top panel and the bottom panel is provided, and a transparent section of the mask plate is disposed; an ultraviolet is emitted along a first incident direction by the mask plate for exposing the alignment film of the top panel and the bottom panel; the transparent section of the mask plate is adjusted, an ultraviolet is emitted along a second incident direction by the mask plate for exposing the alignment film of the top panel and the bottom panel. The manufacture of the alignment film in the whole liquid crystal display device can be accomplished by a mask plate undergoing exposure twice, so that the exposure times decrease and the process is simplified.

    MASK PLATE, PHOTO-ALIGNMENT METHOD AND LIQUID CRYSTAL DISPLAY DEVICE
    12.
    发明申请
    MASK PLATE, PHOTO-ALIGNMENT METHOD AND LIQUID CRYSTAL DISPLAY DEVICE 有权

    公开(公告)号：US20170242304A1

    公开(公告)日：2017-08-24

    申请号：US15589050

    申请日：2017-05-08

    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.

    Inventor： Jie SUN

    IPC: G02F1/1337 ,  G03F7/20

    CPC classification number: G03F1/38 ,  G02F1/133788 ,  G02F2001/134345 ,  G03F7/203 ,  G03F7/70058

    Abstract: The disclosure is related to a photo-alignment method, comprising the following steps. A top panel and a bottom panel each with an alignment film are provided; a mask plate for shielding the top panel and the bottom panel is provided, and a transparent section of the mask plate is disposed; an ultraviolet is emitted along a first incident direction by the mask plate for exposing the alignment film of the top panel and the bottom panel; the transparent section of the mask plate is adjusted, an ultraviolet is emitted along a second incident direction by the mask plate for exposing the alignment film of the top panel and the bottom panel. The manufacture of the alignment film in the whole liquid crystal display device can be accomplished by a mask plate undergoing exposure twice, so that the exposure times decrease and the process is simplified.

    Mask plate, photo-alignment method and liquid crystal display device
    13.
    发明授权
    Mask plate, photo-alignment method and liquid crystal display device 有权

    公开(公告)号：US09678390B2

    公开(公告)日：2017-06-13

    申请号：US14436450

    申请日：2015-01-13

    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.

    Inventor： Jie Sun

    IPC: G02F1/1337 ,  G03F7/20 ,  G02F1/1343

    CPC classification number: G03F1/38 ,  G02F1/133788 ,  G02F2001/134345 ,  G03F7/203 ,  G03F7/70058

    Abstract: The disclosure is related to a photo-alignment method, comprising the following steps. A top panel and a bottom panel each with an alignment film are provided; a mask plate for shielding the top panel and the bottom panel is provided, and a transparent section of the mask plate is disposed; an ultraviolet is emitted along a first incident direction by the mask plate for exposing the alignment film of the top panel and the bottom panel; the transparent section of the mask plate is adjusted, an ultraviolet is emitted along a second incident direction by the mask plate for exposing the alignment film of the top panel and the bottom panel. The manufacture of the alignment film in the whole liquid crystal display device can be accomplished by a mask plate undergoing exposure twice, so that the exposure times decrease and the process is simplified.

    CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD
    14.
    发明申请
    CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD 审中-公开
    化学稳定材料和电阻形成方法

    公开(公告)号：US20170075221A1

    公开(公告)日：2017-03-16

    申请号：US15259200

    申请日：2016-09-08

    Applicant: JSR CORPORATION

    Inventor： Hisashi NAKAGAWA ,  Takehiko NARUOKA ,  Tomoki NAGAI

    IPC: G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20

    CPC classification number: G03F7/0397 ,  C08F220/24 ,  C08F228/02 ,  C08F2220/382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/203 ,  G03F7/322 ,  G03F7/38

    Abstract: A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.

    Abstract translation: 化学放大抗蚀剂材料包括：能够通过酸的作用使其可溶于或不溶于显影剂溶液的聚合物组分; 以及能够在曝光时产生辐射敏感敏化剂和酸的生成成分。 聚合物组分包括：包含第一结构单元的第一聚合物，其包含氟原子并且不包含盐结构; 或包含包含氟原子和盐结构的第二结构单元的第二聚合物。 生成组分包括：辐射敏感的酸和敏化剂产生剂; 任何两种辐射敏感性酸敏感剂发生剂，辐射敏感敏化剂产生剂和辐射敏感性酸产生剂; 或辐射敏感性酸敏感剂发生剂，辐射敏感敏化剂发生剂和辐射敏感性酸产生剂。

    Reagent for enhancing generation of chemical species
    18.
    发明授权
    Reagent for enhancing generation of chemical species 有权
    用于增强化学物种生成的试剂

    公开(公告)号：US09488915B2

    公开(公告)日：2016-11-08

    申请号：US14547097

    申请日：2014-11-18

    Applicant: TOYO GOSEI CO., LTD.

    Inventor： Takashi Miyazawa

    IPC: C07F7/00 ,  G03F7/075 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

    CPC classification number: G03F7/0755 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2022 ,  G03F7/203

    Abstract: A reagent that enhances acid generation of a photoacid generator and composition containing such reagent is disclosed. Described is a reagent that generates a first chemical species in at least one of a composition including the reagent, a solution of the composition, and a film formed of the composition. Further described is a reagent that generates a first product in at least one of a composition including the reagent, a solution of the composition, and a film formed of the composition.

    Abstract translation: 公开了增强光酸产生剂的酸生成剂和含有该试剂的组合物的试剂。 描述了在包含试剂，组合物溶液和由组合物形成的膜的组合物中的至少一种中产生第一化学物质的试剂。 进一步描述的是在包含试剂，组合物溶液和由组合物形成的膜的组合物中的至少一种中产生第一产物的试剂。

    ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES
    19.
    发明申请
    ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES 有权
    基于电子束（E-BEAM）的半导体器件特征

    公开(公告)号：US20160247714A1

    公开(公告)日：2016-08-25

    申请号：US14627653

    申请日：2015-02-20

    Applicant: QUALCOMM Incorporated

    Inventor： Stanley Seungchul Song ,  Jeffrey Junhao Xu ,  Da Yang ,  Choh Fei Yeap

    IPC: H01L21/768 ,  H01L23/535 ,  G06F17/50 ,  H01L21/311

    CPC classification number: H01L21/76802 ,  G03F1/14 ,  G03F7/203 ,  G03F7/70425 ,  G03F7/70433 ,  G03F7/7045 ,  G03F7/70466 ,  G06F17/5077 ,  H01L21/31116 ,  H01L23/535

    Abstract: Electron-beam (e-beam) based semiconductor device features are disclosed. In a particular aspect, a method includes performing a first lithography process to fabricate a first set of cut pattern features on a semiconductor device. A distance of each feature of the first set of cut pattern features from the feature to an active area is greater than or equal to a threshold distance. The method further includes performing an electron-beam (e-beam) process to fabricate a second cut pattern feature on the semiconductor device. A second distance of the second cut pattern feature from the second cut pattern feature to the active area is less than or equal to the threshold distance.

    Abstract translation: 公开了基于电子束（e-beam）的半导体器件特征。 在特定方面，一种方法包括执行第一光刻工艺以在半导体器件上制造第一组切割图案特征。 从特征到有效区域的第一组切割图案特征的每个特征的距离大于或等于阈值距离。 该方法还包括执行电子束（e-beam）工艺以在半导体器件上制造第二切割图案特征。 第二切割图案特征从第二切割图案特征到有效区域的第二距离小于或等于阈值距离。

    ALTERNATING SPACE DECOMPOSITION IN CIRCUIT STRUCTURE FABRICATION
    20.
    发明申请
    ALTERNATING SPACE DECOMPOSITION IN CIRCUIT STRUCTURE FABRICATION 有权
    在电路结构制造中替代空间分解

    公开(公告)号：US20160124308A1

    公开(公告)日：2016-05-05

    申请号：US14533464

    申请日：2014-11-05

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Guoxiang NING ,  Xintuo DAI ,  Huang LIU ,  Chin Teong LIM

    IPC: G03F7/20 ,  G03F7/00

    CPC classification number: G03F7/0035 ,  G03F7/094 ,  G03F7/2024 ,  G03F7/203

    Abstract: Fabrication of a circuit structure is facilitated, in which a first exposure of a multi-layer structure is performed using a first mask, which defines positioning of at least one edge of an element to be formed above a substrate of the multi-layer structure. A second exposure of the multi-layer structure is performed using a second mask, which defines positioning of at least one other edge of the element. At least some material of the multi-layer structure is removed using, at least in part, the defined positioning of the at least one edge and the at least one other edges of the element, to form the element above the substrate. In some examples, multiple elements are formed, the multiple elements being hardmask elements to facilitate an etch process to etch a substrate material.

    Abstract translation: 促进电路结构的制造，其中使用第一掩模进行多层结构的第一曝光，第一掩模限定要形成在多层结构的基板上方的元件的至少一个边缘的定位。 使用限定元件的至少一个其它边缘的定位的第二掩模来执行多层结构的第二曝光。 至少部分地使用所述元件的至少一个边缘和所述至少一个其它边缘的限定的定位来移除所述多层结构的至少一些材料，以在所述基底上方形成所述元件。 在一些示例中，形成多个元件，多个元件是硬掩模元件，以便蚀刻工艺来蚀刻衬底材料。

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