Invention Application
- Patent Title: CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD
- Patent Title (中): 化学稳定材料和电阻形成方法
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Application No.: US15259200Application Date: 2016-09-08
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Publication No.: US20170075221A1Publication Date: 2017-03-16
- Inventor: Hisashi NAKAGAWA , Takehiko NARUOKA , Tomoki NAGAI
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2015-178982 20150910
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/38 ; G03F7/32 ; G03F7/20

Abstract:
A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.
Public/Granted literature
- US10120282B2 Chemically amplified resist material and resist pattern-forming method Public/Granted day:2018-11-06
Information query
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