公开(公告)号：US20100126409A1

公开(公告)日：2010-05-27

申请号：US11988295

申请日：2006-04-27

Applicant: Masahiro Sakurada ,  Izumi Fusegawa

Inventor： Masahiro Sakurada ,  Izumi Fusegawa

IPC: C30B15/20

CPC classification number: C30B15/305 ,  C30B30/04

Abstract: This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein ΔBr represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and ΔRc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.

Abstract translation: 本发明提供了一种通过Chokralsky方法制造单晶的方法，其中施加了水平磁场，其特征在于，将单晶拉起，使得这样的放射状磁场强度梯度Dgr; Br /＆Dgr; Rc 连接磁场产生线圈（25）的中心的方向大于5.5（高斯/ mm）且不大于10（高斯/ mm），其中＆Dgr; Br表示来自原始磁场强度的磁场强度的变化量 （O）作为单晶（12）与熔体表面上的坩埚的内壁（A）的固 - 液界面的中心部分，高斯; 和R d表示从熔点表面上的坩埚的原始点（O）到内壁（A）的径向距离。 根据单晶的制造工序，在生长单晶时，固液界面附近的温度梯度的变化可以最小化，并且在晶体生长方向上具有期望缺陷区的高质量单晶可以 容易以高产率高产率生产。

公开(公告)号：US20100050929A1

公开(公告)日：2010-03-04

申请号：US12199085

申请日：2008-08-27

Applicant: Achim Hobl ,  Bernhard Fischer

Inventor： Achim Hobl ,  Bernhard Fischer

IPC: C30B19/00

CPC classification number: C30B15/305 ,  Y10T117/1032

Abstract: Coil arrangement for crystal pulling comprising two coils, wherein at least one of said two coils is arranged in a way to substantially surround the crystal and/or the fluid the crystal is pulled from. Method of forming a crystal comprising the steps of providing a fluid the crystal is pulled from, and providing two coils, wherein at least one of said two coils is arranged in a way to substantially surround the crystal and/or the fluid, and pulling the crystal from the fluid.

Abstract translation: 用于晶体拉制的线圈布置包括两个线圈，其中所述两个线圈中的至少一个以基本上围绕晶体和/或流体的方式布置，晶体被拉出。 包括以下步骤的形成晶体的方法：提供晶体的流体，并且提供两个线圈，其中所述两个线圈中的至少一个以基本上围绕晶体和/或流体的方式布置，并且拉动 晶体从流体中。

公开(公告)号：US07635413B2

公开(公告)日：2009-12-22

申请号：US11712841

申请日：2007-03-01

Applicant: Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Akihiro Yauchi ,  Yoshihisa Ueda ,  Yutaka Itoh ,  Nobuhiro Okada

Inventor： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Akihiro Yauchi ,  Yoshihisa Ueda ,  Yutaka Itoh ,  Nobuhiro Okada

IPC: C30B23/00 ,  C30B28/12

CPC classification number: C30B9/06 ,  C30B9/10 ,  C30B15/305 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B29/36 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/1072

Abstract: A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.

Abstract translation: 通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长 通过逐渐冷却溶液或通过在其中提供温度梯度来制备。 对于这种方法，通过反复加速到规定的转速并以该速度保持并减速到较低的转速或0转速来施加坩埚的加速旋转。 坩埚的旋转方向可以反转每个加速度。 种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。 以高的晶体生长速率生产不含夹杂物的大质量好的单晶。

公开(公告)号：US07611580B2

公开(公告)日：2009-11-03

申请号：US11753722

申请日：2007-05-25

Applicant: Zheng Lu

Inventor： Zheng Lu

IPC: C30B35/00

CPC classification number: C30B29/06 ,  C30B15/203 ,  C30B15/22 ,  C30B15/305 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

Abstract: System for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.

Abstract translation: 用于控制切克拉斯基晶体生长装置中的晶体生长的系统。 在晶体生长装置内施加磁场，并且改变以控制熔体 - 固体界面的形状，其中晶锭从熔体中拉出。 熔体 - 固体界面的形状响应于作为锭的长度的函数的变化的磁场而形成为期望的形状。

公开(公告)号：US07588638B2

公开(公告)日：2009-09-15

申请号：US12021828

申请日：2008-01-29

Applicant: Toshio Hisaichi

Inventor： Toshio Hisaichi

IPC: C30B35/00

CPC classification number: C30B15/305 ,  C30B15/14 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagnet 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.

Abstract translation: 具有加热器4的单晶拉制装置，该加热器4通过围绕炉体2内的坩埚3的圆柱形放热部分4a的热辐射熔化材料硅，以及制备为围绕炉体2并施加横向磁场的电磁体13 提供了坩埚3中的硅液体熔体。 加热器4的放热部4a中的上拉轴方向的长度h被配置为坩埚3的内径的0.5倍〜0.9倍，放热轴向上的第一中间位置 部分4a布置在电磁体13的上拉轴方向上的第二中间位置的下方，第一和第二中间位置之间的距离差d为坩埚3的内径R的0.15倍至0.55倍。

公开(公告)号：US20090114147A1

公开(公告)日：2009-05-07

申请号：US12263000

申请日：2008-10-31

Applicant: Hyon-Jong Cho ,  Seung-Ho Shin ,  Ji-Hun Moon ,  Hong-Woo Lee ,  Young-Ho Hong

Inventor： Hyon-Jong Cho ,  Seung-Ho Shin ,  Ji-Hun Moon ,  Hong-Woo Lee ,  Young-Ho Hong

IPC: C30B15/00

CPC classification number: C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

Abstract translation: 本发明涉及一种半导体单晶生长方法，其使用切克劳斯基法（Czochralski）方法，通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固体 - 液体界面生长半导体单晶，并将其转动 石英坩埚并施加强的水平磁场，其中当石英坩埚以0.6rpm和1.5rpm之间的速率旋转时，种子被拉起。

公开(公告)号：US07456082B2

公开(公告)日：2008-11-25

申请号：US11492705

申请日：2006-07-24

Applicant: Keisei Abe

Inventor： Keisei Abe

IPC: H01L21/30 ,  H01L21/46

CPC classification number: C30B15/305

Abstract: In a method for producing a silicon single by pulling the silicon single crystal from a silicon melt contained in a crucible, a magnetic field is applied to the silicon melt in a radial direction of the silicon single crystal, and a vertical level of a center of the magnetic field relative to a surface of the silicon melt is controlled such that a thermal gradient in an axial direction of the crystal is maintained at a constant value in respective portions along a radial direction of the silicon single crystal.

Abstract translation: 在通过从包含在坩埚中的硅熔体中拉出硅单晶来制造硅单晶的方法中，在硅单晶的径向方向上对硅熔体施加磁场，并且将垂直方向的 控制相对于硅熔体的表面的磁场，使得在硅单晶的径向方向的各部分中，晶体轴向的热梯度保持恒定值。

公开(公告)号：US20080184929A1

公开(公告)日：2008-08-07

申请号：US12021828

申请日：2008-01-29

Applicant: Toshio HISAICHI

Inventor： Toshio HISAICHI

IPC: C30B35/00

CPC classification number: C30B15/305 ,  C30B15/14 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagent 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.

Abstract translation: 具有加热器4的单晶拉制装置，该加热器4通过热辐射熔化材料硅，该圆柱形放热部分4a围绕炉体2内的坩埚3和电磁体13，电磁体13准备围绕炉体2并施加横向磁 提供了坩埚3中的硅液体熔融的场。 加热器4的放热部分4a中的上拉轴方向上的长度h被设置为坩埚3的内径的0.5倍至0.9倍，在上升轴方向上的第一中间位置 放热部分4a被布置在电磁体13的上拉轴方向的第二中间位置的下方，第一和第二中间位置之间的距离差d是坩埚3的内径R的0.15倍至0.55倍。

公开(公告)号：US20070227442A1

公开(公告)日：2007-10-04

申请号：US11753722

申请日：2007-05-25

Applicant: Zheng Lu

Inventor： Zheng Lu

IPC: C30B30/04

CPC classification number: C30B29/06 ,  C30B15/203 ,  C30B15/22 ,  C30B15/305 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

Abstract: System for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.

Abstract translation: 用于控制切克拉斯基晶体生长装置中的晶体生长的系统。 在晶体生长装置内施加磁场，并且改变以控制熔体 - 固体界面的形状，其中晶锭从熔体中拉出。 熔体 - 固体界面的形状响应于作为锭的长度的函数的变化的磁场而形成为期望的形状。

公开(公告)号：US20070131158A1

公开(公告)日：2007-06-14

申请号：US10588750

申请日：2005-02-18

Applicant: Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

Inventor： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

IPC: C30B15/00 ,  C30B19/00 ,  C30B21/06

CPC classification number: C30B15/305 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3 is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3 is adjusted to 40.3≦M/V1/3≦56.4.

Abstract translation: 制造单晶半导体的方法实现了减少半导体晶片平面内的杂质浓度不均匀性的目的，从而通过在单晶半导体从单晶半导体的拉制过程中更均匀地引入杂质来提高晶片的平面性 熔化。 在拉动单晶半导体（6）的过程中，将被拉动的单晶半导体（6）的旋转速度（ω2）调整为规定值以上，将强度设定为规定范围的磁场 施加到熔体（5）上。 特别地，将晶体圆周速度调整为0.126m / sec以上，将M / V 1/3调整为35.5≤M/V≤1.3< = 61.3。 更希望的是，将晶体圆周速度调节到0.141m / sec或更高，并且将M / V 1/3调节到40.3 <= M / V 1/3 / <= 56.4。