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    Integrated circuit, memory device and method of manufacturing the same
    11.
    发明授权
    Integrated circuit, memory device and method of manufacturing the same 有权

    公开(公告)号：US12063785B2

    公开(公告)日：2024-08-13

    申请号：US17462663

    申请日：2021-08-31

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Kuo-Pin Chang ,  Chien Hung Liu ,  Chih-Wei Hung

    IPC分类号： H10B51/20 ,  H10B51/30

    CPC分类号： H10B51/20 ,  H10B51/30

    摘要： A memory cell, an integrated circuit and method of manufacturing the same are provided. The memory device includes a substrate, gate layers and insulating layers, an isolation column, a channel layer, a first conductive feature, a second conductive feature, a storage layer and a pair of isolation structures. The isolation column extends through the gate layers and the insulating layers along a first direction. The channel layer laterally covers the isolation column. The first conductive feature and second conductive feature extend along the first direction and adjacent to the isolation column. The storage layer is disposed between the gate layers and the channel layer. The pair of isolation structures extends along the first direction. The pair of isolation structures includes a first isolation structure disposed between the first conductive feature and the gate layers, and a second isolation structure disposed between the second conductive feature and the gate layers.