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    Semiconductor device
    11.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11380607B2

    公开(公告)日：2022-07-05

    申请号：US17147927

    申请日：2021-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

    IPC: H01L23/48 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate having a first surface on which an active region is disposed, and a second surface opposite the first surface, a buried conductive line extending in one direction and having a portion buried in the active region, an insulating portion covering the buried conductive line, a contact structure disposed on the insulating portion and connected to the buried conductive line, a through-hole extending from the second surface to the insulating portion and exposing the buried portion of the buried conductive line, an insulating isolation film disposed on a side surface of the buried conductive line and exposing a bottom surface of the buried portion and a side surface adjacent to the bottom surface, a through-via contacting the bottom surface and the adjacent side surface of the buried conductive line, an insulating liner surrounding the through-via.

    Semiconductor device and method of manufacturing the same
    13.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US12142588B2

    公开(公告)日：2024-11-12

    申请号：US18126205

    申请日：2023-03-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joohee Jang ,  Seokho Kim ,  Hoonjoo Na ,  Jaehyung Park ,  Kyuha Lee

    IPC: H01L27/146 ,  H01L23/00

    Abstract: A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.

    SEMICONDUCTOR DEVICE
    16.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220336330A1

    公开(公告)日：2022-10-20

    申请号：US17855902

    申请日：2022-07-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

    IPC: H01L23/48 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate having a first surface on which an active region is disposed, and a second surface opposite the first surface, a buried conductive line extending in one direction and having a portion buried in the active region, an insulating portion covering the buried conductive line, a contact structure disposed on the insulating portion and connected to the buried conductive line, a through-hole extending from the second surface to the insulating portion and exposing the buried portion of the buried conductive line, an insulating isolation film disposed on a side surface of the buried conductive line and exposing a bottom surface of the buried portion and a side surface adjacent to the bottom surface, a through-via contacting the bottom surface and the adjacent side surface of the buried conductive line, an insulating liner surrounding the through-via.

    Substrate bonding apparatus
    18.
    发明授权
    Substrate bonding apparatus 有权

    公开(公告)号：US10923452B2

    公开(公告)日：2021-02-16

    申请号：US16783342

    申请日：2020-02-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ilyoung Han ,  Taeyeong Kim ,  Jihoon Kang ,  Nohsung Kwak ,  Seokho Kim ,  Hoechul Kim ,  Ilhyoung Lee ,  Hakjun Lee

    IPC: H01L23/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/683

    Abstract: A substrate bonding apparatus for bonding a first substrate to a second substrate includes: a first bonding chuck including: a first base; a first deformable plate provided on the first base to support the first substrate; and a first pneumatic adjustor configured to deform the first deformable plate by adjusting a first pressure in a first cavity formed between the first deformable plate and the first base; and a second bonding chuck including: a second base; a second deformable plate provided on the second base to support the second substrate; and a second pneumatic adjustor configured to deform the second deformable plate by adjusting a second pressure in a second cavity formed between the second deformable plate and the second base. The first deformable plate is deformed such that a first distance between the first base and the first deformable plate is varied based on the first pressure, and the second deformable plate is deformed such that a second distance between the second base the second deformable plate is varied based on the second pressure.

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