公开(公告)号：US10658454B2

公开(公告)日：2020-05-19

申请号：US16573156

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Cho ,  Sangyeol Kang ,  Suhwan Kim ,  Sunmin Moon ,  Young-Lim Park ,  Jong-Bom Seo ,  Joohyun Jeon

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US09666433B2

公开(公告)日：2017-05-30

申请号：US15130515

申请日：2016-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Badro Im ,  Yoonchul Cho ,  Sangyeol Kang ,  Daehyun Kim ,  Dongkak Lee ,  Jun-Noh Lee ,  Bonghyun Kim ,  Kongsoo Lee

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/0337 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32139

Abstract: Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.