公开(公告)号：US11764283B2

公开(公告)日：2023-09-19

申请号：US17720198

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H10B12/00 ,  H01L49/02

CPC classification number: H01L29/517 ,  H01L21/76221 ,  H01L28/90 ,  H01L29/0649 ,  H01L29/152 ,  H01L29/518 ,  H10B12/033

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US11711915B2

公开(公告)日：2023-07-25

申请号：US17570477

申请日：2022-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L29/76 ,  H01L29/94 ,  H10B12/00

CPC classification number: H10B12/37

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

公开(公告)号：US11244946B2

公开(公告)日：2022-02-08

申请号：US16946487

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L29/76 ,  H01L27/108 ,  H01L29/94

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

公开(公告)号：US11114541B2

公开(公告)日：2021-09-07

申请号：US17035675

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US11069768B2

公开(公告)日：2021-07-20

申请号：US16781151

申请日：2020-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Se Hyoung Ahn ,  Sang Yeol Kang ,  Chang Mu An ,  Kyoo Ho Jung

IPC: H01L27/11507 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.

公开(公告)号：US10453913B2

公开(公告)日：2019-10-22

申请号：US15938234

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Cho ,  Sangyeol Kang ,  Suhwan Kim ,  Sunmin Moon ,  Young-Lim Park ,  Jong-Bom Seo ,  Joohyun Jeon

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US11621339B2

公开(公告)日：2023-04-04

申请号：US17390864

申请日：2021-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US11233118B2

公开(公告)日：2022-01-25

申请号：US16400475

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Sun-Min Moon ,  Chang-Hwa Jung ,  Young-Geun Park ,  Jong-Bom Seo ,  Kyu-Ho Cho

IPC: H01L49/02 ,  C23C16/455

Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

公开(公告)号：US11488958B2

公开(公告)日：2022-11-01

申请号：US16916751

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.

公开(公告)号：US20210125993A1

公开(公告)日：2021-04-29

申请号：US16916751

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.