公开(公告)号：US11621339B2

公开(公告)日：2023-04-04

申请号：US17390864

申请日：2021-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US09600591B2

公开(公告)日：2017-03-21

申请号：US13998070

申请日：2013-09-27

Applicant: Samsung Electronics Co., Ltd

Inventor： Junseok Hong ,  Sangig Rho ,  Hocheol Lee ,  Kyuho Cho ,  Jaejin Kim ,  Jonghun Kim

IPC: G06F17/30

CPC classification number: G06F17/30887 ,  G06F17/30005 ,  G06F17/30743 ,  G06F17/30749

Abstract: A URL search apparatus is configured to perform a method for URL address search in a URL list. The URL search apparatus maintains a URL list, and the method for Uniform Resource Locator (URL) address search includes receiving a connection request containing URL address information from a user; identifying tables that are generated according to characters constituting URL address information in the URL list and lengths of character strings serving as URL address information in the URL list; and performing a URL search by checking whether the URL address information contained in the connection request is present in the URL list on the basis of the identified tables.

公开(公告)号：US20140103491A1

公开(公告)日：2014-04-17

申请号：US14022865

申请日：2013-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomseok Kim ,  Ohseong Kwon ,  Wandon Kim ,  Jaewan Chang ,  Kyuho Cho

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/91

Abstract: The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.

Abstract translation: 本发明构思提供半导体器件，其可以包括依次层叠的包括下电极，电介质层和上电极的电容器。 可以在电容器上设置电极保护层。 上电极可以包括导电金属氧化物，并且电极保护层可以包括包含金属 - 氢化合物的牺牲反应层。

公开(公告)号：US20140089344A1

公开(公告)日：2014-03-27

申请号：US13998070

申请日：2013-09-27

Applicant: Samsung Electronics Co., Ltd

Inventor： Junseok Hong ,  Sangig Rho ,  Hocheol Lee ,  Kyuho Cho ,  Jaejin Kim ,  Jonghun Kim

IPC: G06F17/30

CPC classification number: G06F17/30887 ,  G06F17/30005 ,  G06F17/30743 ,  G06F17/30749

Abstract: A URL search apparatus is configured to perform a method for URL address search in a URL list. The URL search apparatus maintains a URL list, and the method for Uniform Resource Locator (URL) address search includes receiving a connection request containing URL address information from a user; identifying tables that are generated according to characters constituting URL address information in the URL list and lengths of character strings serving as URL address information in the URL list; and performing a URL search by checking whether the URL address information contained in the connection request is present in the URL list on the basis of the identified tables.

Abstract translation: URL搜索装置被配置为在URL列表中执行URL地址搜索的方法。 URL搜索装置维护URL列表，并且统一资源定位符（URL）地址搜索的方法包括从用户接收包含URL地址信息的连接请求; 识别根据构成URL列表中的URL地址信息的字符和用作URL列表中的URL地址信息的字符串的长度生成的表; 并且基于所识别的表，通过检查包含在连接请求中的URL地址信息是否存在于URL列表中来执行URL搜索。

公开(公告)号：US10892345B2

公开(公告)日：2021-01-12

申请号：US15995049

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US10854709B2

公开(公告)日：2020-12-01

申请号：US16392097

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho Jung ,  Sangyeol Kang ,  Kyuho Cho ,  Eunsun Kim ,  Hyosik Mun

IPC: H01L21/02 ,  H01L49/02

Abstract: A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

公开(公告)号：US10658454B2

公开(公告)日：2020-05-19

申请号：US16573156

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Cho ,  Sangyeol Kang ,  Suhwan Kim ,  Sunmin Moon ,  Young-Lim Park ,  Jong-Bom Seo ,  Joohyun Jeon

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US09093460B2

公开(公告)日：2015-07-28

申请号：US14022865

申请日：2013-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomseok Kim ,  Ohseong Kwon ,  Wandon Kim ,  Jaewan Chang ,  Kyuho Cho

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/91

Abstract: The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.

Abstract translation: 本发明构思提供半导体器件，其可以包括依次层叠的包括下电极，电介质层和上电极的电容器。 可以在电容器上设置电极保护层。 上电极可以包括导电金属氧化物，并且电极保护层可以包括包含金属 - 氢化合物的牺牲反应层。

公开(公告)号：US11764283B2

公开(公告)日：2023-09-19

申请号：US17720198

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H10B12/00 ,  H01L49/02

CPC classification number: H01L29/517 ,  H01L21/76221 ,  H01L28/90 ,  H01L29/0649 ,  H01L29/152 ,  H01L29/518 ,  H10B12/033

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US11133179B2

公开(公告)日：2021-09-28

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung Lee ,  Woojin Lee ,  Myoungho Jeong ,  Yongsung Kim ,  Eunsun Kim ,  Hyosik Mun ,  Jooho Lee ,  Changseung Lee ,  Kyuho Cho ,  Darrell G. Schlom ,  Craig J. Fennie ,  Natalie M. Dawley ,  Gerhard H. Olsen ,  Zhe Wang

IPC: H01L49/02 ,  H01L21/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.