公开(公告)号：US20180138174A1

公开(公告)日：2018-05-17

申请号：US15807012

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki MIN ,  Sang Koo Kang ,  Koung Min Ryu ,  Gi Gwan Park

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L23/535 ,  H01L21/8234 ,  H01L21/311 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/762 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/4232 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.