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    ELECTRONIC DEVICE FOR PROCESSING IMAGE DATA AND IMAGE DATA PROCESSING METHOD
    14.
    发明申请
    ELECTRONIC DEVICE FOR PROCESSING IMAGE DATA AND IMAGE DATA PROCESSING METHOD 有权

    公开(公告)号：US20220345625A1

    公开(公告)日：2022-10-27

    申请号：US17861814

    申请日：2022-07-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gyushik AN ,  Joonho YOUN ,  Jaehyun KIM ,  Jehan YOON ,  Kihuk LEE

    IPC: H04N5/232 ,  H04N5/77

    Abstract: An electronic device is provided. The electronic device includes a camera module for acquiring image data, a memory for storing a program module for controlling the camera module, and a processor electrically connected to the camera module or the memory, wherein the program module includes an application associated with the camera module, a framework for processing one or more requests received by the application, a hardware interface for interfacing with the camera module, and a solution layer for interlinking the hardware interface and the framework, and performing a post-processing operation of the image data by using at least a part of the camera module.

    ELECTRONIC DEVICE FOR AUDIO INPUT AND METHOD FOR OPERATING THE SAME
    15.
    发明申请
    ELECTRONIC DEVICE FOR AUDIO INPUT AND METHOD FOR OPERATING THE SAME 有权

    公开(公告)号：US20220295178A1

    公开(公告)日：2022-09-15

    申请号：US17568171

    申请日：2022-01-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myeongwan GANG ,  Jaehyun KIM ,  Sangsoo PARK ,  Hakhoon SONG ,  Dongmoon OK ,  Byeongjun KIM ,  Kyoungho BANG

    IPC: H04R3/00 ,  H04R3/04 ,  H04R3/12

    Abstract: An electronic device and method are disclosed. The electronic device includes an internal microphone, a communication module, and at least one processor. The processor implements the method, including: receiving, through the communication module, a first audio signal input through an external microphone included in an external electronic device communicatively connected to the electronic device, activating the internal microphone in response to detecting a device switch event switching from the external microphone to the internal microphone while receiving the first audio signal, receiving a second audio signal input through the internal microphone, synchronizing and mixing the first audio signal and the second audio signal during a designated first time period, and deactivating the external microphone upon detecting lapse of the designated first time period.

    SEMICONDUCTOR DEVICES
    18.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20240172417A1

    公开(公告)日：2024-05-23

    申请号：US18420138

    申请日：2024-01-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sohyeon BAE ,  Wonchul LEE ,  Jaehyun KIM ,  Jaehyuk JANG ,  Hyebin CHOI

    IPC: H10B12/00 ,  H01L23/528

    CPC classification number: H10B12/315 ,  H01L23/528

    Abstract: A semiconductor device includes a gate structure and a contact plug. The gate structure extends in a first direction parallel to the substrate, and includes a first conductive pattern, a second conductive pattern and a gate mask sequentially stacked. The contact plug contacts an end portion in the first direction of the gate structure, and includes a first extension portion extending in a vertical direction and contacting sidewalls of the gate mask and the second conductive pattern, a second extension portion under and contacting the first extension portion and a sidewall of the first conductive pattern, and a protrusion portion under and contacting the second extension portion. A bottom of the protrusion portion does not contact the first conductive pattern. A first slope of a sidewall of the first extension portion is greater than a second slope of a sidewall of the second extension portion.

    SEMICONDUCTOR DEVICES
    20.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220271041A1

    公开(公告)日：2022-08-25

    申请号：US17484679

    申请日：2021-09-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sohyeon BAE ,  Wonchul LEE ,  Jaehyun KIM ,  Jaehyuk JANG ,  Hyebin CHOI

    IPC: H01L27/108 ,  H01L23/528

    Abstract: A semiconductor device includes a gate structure and a contact plug. The gate structure extends in a first direction parallel to the substrate, and includes a first conductive pattern, a second conductive pattern and a gate mask sequentially stacked. The contact plug contacts an end portion in the first direction of the gate structure, and includes a first extension portion extending in a vertical direction and contacting sidewalls of the gate mask and the second conductive pattern, a second extension portion under and contacting the first extension portion and a sidewall of the first conductive pattern, and a protrusion portion under and contacting the second extension portion. A bottom of the protrusion portion does not contact the first conductive pattern. A first slope of a sidewall of the first extension portion is greater than a second slope of a sidewall of the second extension portion.

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