公开(公告)号：US20240172417A1

公开(公告)日：2024-05-23

申请号：US18420138

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sohyeon BAE ,  Wonchul LEE ,  Jaehyun KIM ,  Jaehyuk JANG ,  Hyebin CHOI

IPC: H10B12/00 ,  H01L23/528

CPC classification number: H10B12/315 ,  H01L23/528

Abstract: A semiconductor device includes a gate structure and a contact plug. The gate structure extends in a first direction parallel to the substrate, and includes a first conductive pattern, a second conductive pattern and a gate mask sequentially stacked. The contact plug contacts an end portion in the first direction of the gate structure, and includes a first extension portion extending in a vertical direction and contacting sidewalls of the gate mask and the second conductive pattern, a second extension portion under and contacting the first extension portion and a sidewall of the first conductive pattern, and a protrusion portion under and contacting the second extension portion. A bottom of the protrusion portion does not contact the first conductive pattern. A first slope of a sidewall of the first extension portion is greater than a second slope of a sidewall of the second extension portion.

公开(公告)号：US20220271041A1

公开(公告)日：2022-08-25

申请号：US17484679

申请日：2021-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sohyeon BAE ,  Wonchul LEE ,  Jaehyun KIM ,  Jaehyuk JANG ,  Hyebin CHOI

IPC: H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes a gate structure and a contact plug. The gate structure extends in a first direction parallel to the substrate, and includes a first conductive pattern, a second conductive pattern and a gate mask sequentially stacked. The contact plug contacts an end portion in the first direction of the gate structure, and includes a first extension portion extending in a vertical direction and contacting sidewalls of the gate mask and the second conductive pattern, a second extension portion under and contacting the first extension portion and a sidewall of the first conductive pattern, and a protrusion portion under and contacting the second extension portion. A bottom of the protrusion portion does not contact the first conductive pattern. A first slope of a sidewall of the first extension portion is greater than a second slope of a sidewall of the second extension portion.