公开(公告)号：US20240008254A1

公开(公告)日：2024-01-04

申请号：US18116071

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin Park ,  Hanjin Lim ,  Hyungsuk Jung

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033

Abstract: A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.

公开(公告)号：US20230253445A1

公开(公告)日：2023-08-10

申请号：US17993943

申请日：2022-11-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik Chae ,  Taekyun Kim ,  Jinsu Lee ,  Yirang Lim ,  Hanjin Lim ,  Hyungsuk Jung

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H01L28/91 ,  H10B12/315 ,  H01L28/92 ,  H10B12/0335

Abstract: A semiconductor device includes: a substrate; a contact plug on the substrate; a lower electrode electrically connected to the contact plug, and including a first electrode layer, a first buffer layer, and a second electrode layer, sequentially stacked; a first support layer in contact with an upper surface of the lower electrode and disposed to overlap at least a portion of the lower electrode, the first support layer extending in a direction parallel to an upper surface of the substrate; a dielectric layer disposed on the lower electrode and the first support layer; and an upper electrode disposed on the dielectric layer. The lower electrode comprises a first region overlapping the first support layer, and having a first height; and a second region not overlapping the first support layer, and having a second height lower than the first height.

公开(公告)号：US20230217647A1

公开(公告)日：2023-07-06

申请号：US17952386

申请日：2022-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik CHAE ,  Taekyun Kim ,  Jin-Su Lee ,  Hyo-Sun Min ,  Hyungsuk Jung ,  Jaehyoung Choi ,  Donguk Han

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/90

Abstract: A semiconductor device includes bottom electrodes on a substrate. A supporting pattern is disposed between the bottom electrodes in a plan view. A top electrode covers the bottom electrodes and the supporting pattern. A dielectric layer is disposed between the bottom electrodes and the top electrode and between the supporting pattern and the top electrode. A capping pattern is interposed between the bottom electrodes and the dielectric layer and between the supporting pattern and the dielectric layer. The capping pattern covers at least a portion of a side surface of the supporting pattern and extends to cover a top surface of the supporting pattern and top surfaces of the bottom electrodes.

公开(公告)号：US20220033962A1

公开(公告)日：2022-02-03

申请号：US17195900

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suhwan Kim ,  Hyunjun Kim ,  Younglim Park ,  Dongkwan Baek ,  Hyungsuk Jung

IPC: C23C16/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/52

Abstract: A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

公开(公告)号：US10079186B2

公开(公告)日：2018-09-18

申请号：US15273933

申请日：2016-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangyub Ie ,  Minwoo Song ,  Jonghan Lee ,  Hyungsuk Jung ,  Hyeri Hong

IPC: H01L23/58 ,  H01L21/66 ,  H01L27/088 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L22/34 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L22/14 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method of fabricating a semiconductor device includes forming first and second fin patterns in an active region and in a measurement region of a substrate, respectively, the measurement region being different from the active region, forming first and second gate electrodes to cross the first and second fin patterns, respectively, and measuring a contact potential difference (Vcpd) of the second gate electrode to determine a threshold voltage of the first gate electrode based on the measured contact potential difference (Vcpd).