公开(公告)号：US20230253445A1

公开(公告)日：2023-08-10

申请号：US17993943

申请日：2022-11-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik Chae ,  Taekyun Kim ,  Jinsu Lee ,  Yirang Lim ,  Hanjin Lim ,  Hyungsuk Jung

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H01L28/91 ,  H10B12/315 ,  H01L28/92 ,  H10B12/0335

Abstract: A semiconductor device includes: a substrate; a contact plug on the substrate; a lower electrode electrically connected to the contact plug, and including a first electrode layer, a first buffer layer, and a second electrode layer, sequentially stacked; a first support layer in contact with an upper surface of the lower electrode and disposed to overlap at least a portion of the lower electrode, the first support layer extending in a direction parallel to an upper surface of the substrate; a dielectric layer disposed on the lower electrode and the first support layer; and an upper electrode disposed on the dielectric layer. The lower electrode comprises a first region overlapping the first support layer, and having a first height; and a second region not overlapping the first support layer, and having a second height lower than the first height.