公开(公告)号：US20200343341A1

公开(公告)日：2020-10-29

申请号：US16928439

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil YANG ,  Dong Il BAE ,  Chang Woo SOHN ,  Seung Min SONG ,  Dong Hun LEE

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165 ,  H01L29/10 ,  H01L27/092 ,  H01L27/02 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

公开(公告)号：US20230223476A1

公开(公告)日：2023-07-13

申请号：US18124339

申请日：2023-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggil YANG ,  Seungmin SONG ,  Geumjong BAE ,  Dong Il BAE

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L29/42356 ,  H01L29/78696 ,  H01L29/78654 ,  H01L29/78618 ,  H01L29/66772 ,  H01L29/66545 ,  H01L29/42392 ,  H01L29/41775 ,  H01L29/7845 ,  H01L29/66795 ,  H01L2029/7858 ,  H01L29/7848

Abstract: A semiconductor device includes a channel pattern including a first semiconductor pattern and a second semiconductor pattern, which are sequentially stacked on a substrate, and a gate electrode that extends in a first direction and crosses the channel pattern. The gate electrode includes a first portion interposed between the substrate and the first semiconductor pattern and a second portion interposed between the first and second semiconductor patterns. A maximum width in a second direction of the first portion is greater than a maximum width in the second direction of the second portion, and a maximum length in the second direction of the second semiconductor pattern is less than a maximum length in the second direction of the first semiconductor pattern.

公开(公告)号：US20220231127A1

公开(公告)日：2022-07-21

申请号：US17715273

申请日：2022-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil YANG ,  Seung Min SONG ,  Soo Jin JEONG ,  Dong Il BAE ,  Bong Seok SUH

IPC: H01L29/08 ,  H01L29/04 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.

公开(公告)号：US20210399108A1

公开(公告)日：2021-12-23

申请号：US17467660

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil YANG ,  Seung Min SONG ,  Soo Jin JEONG ,  Dong Il BAE ,  Bong Seok SUH

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L27/088 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12

Abstract: A semiconductor device having a gate-all-around structure includes a first fin pattern and a second fin pattern separated by a first trench and extending in a first direction, a first nanosheet on the first fin pattern, a second nanosheet on the second fin pattern, a first fin liner extending along at least a portion of a sidewall and a bottom surface of the first trench, a first field insulation layer disposed on the first fin liner and filling a portion of the first trench, and a first gate structure overlapping an end portion of the first fin pattern and including a first gate spacer. A height from the bottom surface of the first trench to a lower surface of the first gate spacer is greater than a height from the bottom surface of the first trench to an upper surface of the first field insulation layer.

公开(公告)号：US20190115424A1

公开(公告)日：2019-04-18

申请号：US15964170

申请日：2018-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Seok PARK ,  Seung Min SONG ,  Jung Gil YANG ,  Geum Jong BAE ,  Dong Il BAE

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device including a transistor disposed on a first region of a substrate, the transistor including source/drain regions, a plurality of channel layers spaced apart from each other in a direction perpendicular to an upper surface of the substrate while connecting the source/drain regions, respectively, a gate electrode surrounding each of the plurality of channel layers, and a gate insulator between the gate electrode and the plurality of channel layers; and a non-active component disposed on a second region of the substrate, the non-active component including a fin structure including an a plurality of first semiconductor patterns alternately stacked with a plurality of second semiconductor patterns, an epitaxial region adjacent to the fin structure, a non-active electrode intersecting the fin structure, and a blocking insulation film between the non-active electrode and the fin structure.

公开(公告)号：US20180190829A1

公开(公告)日：2018-07-05

申请号：US15647903

申请日：2017-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min SONG ,  Woo Seok PARK ,  Geum Jong BAE ,  Dong Il BAE ,  Jung Gil YANG

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78618 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.