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    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    11.
    发明申请
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20250142994A1

    公开(公告)日：2025-05-01

    申请号：US18750406

    申请日：2024-06-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Juhyeon BAEK ,  Dongchan Kim ,  Beomsuk Lee ,  Byoungho Kwon ,  Changkyu Lee ,  Hwiyoung Jeon

    IPC: H01L27/146

    Abstract: An image sensor includes unit pixels respectively including photodiodes in a substrate having frontside and backside surfaces, a sensor array area including at least one isolation structure configured to isolate the unit pixels from each other and vertically penetrating the substrate, and a capacitor area arranged adjacent to the sensor array area in a horizontal direction parallel to the backside surface of the substrate and including at least one capacitor on the frontside surface of the substrate and at least one dummy isolation structure located adjacent to the at least one capacitor to vertically penetrate the substrate, wherein one end surface of each of the at least one capacitor and the at least one dummy isolation structure is coplanar with the backside surface of the substrate, and the at least one isolation structure and the at least one dummy isolation structure include a same material.

    IMAGE SENSOR
    14.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20230054728A1

    公开(公告)日：2023-02-23

    申请号：US17737226

    申请日：2022-05-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangchun Park ,  Sungbong Park ,  Beomsuk Lee

    IPC: H01L27/146

    Abstract: An image sensor includes pixels arranged parallel to an upper surface of a substrate and a pixel isolation film disposed between the pixels. Each pixel includes a floating diffusion region doped with impurities of a first conductivity type, a transfer gate structure adjacent to the floating diffusion region, and a transistor. The transfer gate structure includes a transfer gate electrode layer, a transfer gate insulating layer, and a transfer gate spacer adjacent to the transfer gate insulating layer in a first direction parallel to the upper surface of the substrate, and a portion of the transfer gate spacer is disposed between the floating diffusion region and the transfer gate electrode layer. In each pixel, a floating diffusion contact connected to the floating diffusion region is disposed more adjacent in the first direction to the pixel isolation film than to the transfer gate structure.

    Image sensors having lower electrode structures below an organic photoelectric conversion layer
    16.
    发明授权
    Image sensors having lower electrode structures below an organic photoelectric conversion layer 有权

    公开(公告)号：US11569298B2

    公开(公告)日：2023-01-31

    申请号：US17034316

    申请日：2020-09-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangchun Park ,  Kwansik Kim ,  Hongki Kim ,  Sangsu Park ,  Beomsuk Lee ,  Taeyon Lee ,  Gwideok Ryan Lee

    IPC: H01L27/30 ,  H01L27/146 ,  H01L51/44

    Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

    Image sensor
    17.
    发明授权
    Image sensor 有权

    公开(公告)号：US10361239B2

    公开(公告)日：2019-07-23

    申请号：US15696132

    申请日：2017-09-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang-Min Lee ,  GwideokRyan Lee ,  Seokjin Kwon ,  Beomsuk Lee ,  Taeyon Lee ,  Dongmo Im

    IPC: H01L27/146 ,  H04N9/04 ,  H04N9/07

    Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

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