公开(公告)号：US20250142994A1

公开(公告)日：2025-05-01

申请号：US18750406

申请日：2024-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juhyeon BAEK ,  Dongchan Kim ,  Beomsuk Lee ,  Byoungho Kwon ,  Changkyu Lee ,  Hwiyoung Jeon

IPC: H01L27/146

Abstract: An image sensor includes unit pixels respectively including photodiodes in a substrate having frontside and backside surfaces, a sensor array area including at least one isolation structure configured to isolate the unit pixels from each other and vertically penetrating the substrate, and a capacitor area arranged adjacent to the sensor array area in a horizontal direction parallel to the backside surface of the substrate and including at least one capacitor on the frontside surface of the substrate and at least one dummy isolation structure located adjacent to the at least one capacitor to vertically penetrate the substrate, wherein one end surface of each of the at least one capacitor and the at least one dummy isolation structure is coplanar with the backside surface of the substrate, and the at least one isolation structure and the at least one dummy isolation structure include a same material.