公开(公告)号：US09921794B2

公开(公告)日：2018-03-20

申请号：US15015159

申请日：2016-02-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Chan Lee ,  So-Young Koo ,  Myoung-Geun Cha ,  Yoon-Ho Khang ,  Myoung-Hwa Kim ,  Woong-Hee Jeong

IPC: G06F3/14 ,  G09G3/20

CPC classification number: G06F3/1446 ,  G09G3/20 ,  G09G2300/026 ,  G09G2310/0232 ,  G09G2320/0233

Abstract: A blind display device includes a plurality of curved display panels, a support, and a plurality of rotators. Each of the curved display panels includes a curved display area between a flat display area and a bezel area. The support guides movement of the curved display panels. The rotators couple corresponding ones of the curved display panels to the support and rotate corresponding ones of the curved display panels.

公开(公告)号：US09552998B2

公开(公告)日：2017-01-24

申请号：US14558458

申请日：2014-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Sang-Ho Park ,  Hyun-Jae Na ,  Yoon-Ho Khang ,  Dae-Ho Kim

IPC: H01L29/08 ,  H01L21/477 ,  H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

Abstract translation: 公开了薄膜晶体管（TFT），制造TFT的方法和具有TFT的平板显示器。 在一个方面，TFT包括衬底和形成在衬底上的有源层，其中有源层由氧化物半导体形成，并且其中有源层包括两个相对的侧面。 TFT还包括形成在有源层的相对侧的源极和漏极区域，在有源层上形成的第一绝缘层，形成在有源层上的栅电极，形成为覆盖第一绝缘层和栅极的第二绝缘层 电极，以及形成在源区和漏区上并接触第二绝缘层的第一导电层。

公开(公告)号：US09224764B2

公开(公告)日：2015-12-29

申请号：US14468633

申请日：2014-08-26

Applicant: Samsung Display Co., LTD.

Inventor： Jae-Neung Kim ,  Yu-Gwang Jeong ,  Shin-Il Choi ,  Dae-Ho Kim ,  Myoung-Geun Cha ,  Sang-Gab Kim ,  Jung-Ha Son

IPC: H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1262 ,  H01L27/1218 ,  H01L27/124

Abstract: A display substrate includes a data pad on a base substrate, a first buffer layer which covers the data pad, a second buffer layer pattern which is disposed on the first buffer layer and separated from the data pad in a plan view, an active layer on the second buffer layer pattern, a gate insulation layer pattern on the active layer, both ends of the active layer exposed by the gate insulation layer pattern, and a gate electrode on the gate insulation layer pattern.

Abstract translation: 显示基板包括在基底基板上的数据焊盘，覆盖数据焊盘的第一缓冲层，布置在第一缓冲层上并在平面图中与数据焊盘分离的第二缓冲层图案，活性层 第二缓冲层图案，有源层上的栅极绝缘层图案，由栅极绝缘层图案曝光的有源层的两端以及栅极绝缘层图案上的栅极电极。

公开(公告)号：US09048322B2

公开(公告)日：2015-06-02

申请号：US13856851

申请日：2013-04-04

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su Lee ,  Hyang-Shik Kong ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969

Abstract: A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

Abstract translation: 显示基板包括基底基板，设置在基底基板上的数据线，与数据线交叉的栅极线，设置在基底基板上的第一绝缘层，设置在第一绝缘层上的有源图案， 氧化物半导体，连接到沟道的源电极和连接到沟道的漏电极，设置在有源图案上的第二绝缘层，并与源电极和漏电极接触;栅极，设置在第二绝缘层上 并且与沟道重叠，设置在栅电极和第二绝缘层上的钝化层以及通过形成在钝化层和第二绝缘层上的第一接触孔与漏电极电连接的像素电极。

公开(公告)号：US08791460B2

公开(公告)日：2014-07-29

申请号：US13693423

申请日：2012-12-04

Applicant: Samsung Display Co., Ltd.

Inventor： Dae-Ho Kim ,  Hyun-Jae Na ,  Yong-Su Lee ,  Myoung-Geun Cha ,  Yoon-Ho Khang ,  Sang-Gab Kim ,  Jae-Neung Kim ,  Se-Hwan Yu

IPC: H01L29/10

CPC classification number: H01L29/786 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66477 ,  H01L29/78618 ,  H01L29/78693

Abstract: A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

Abstract translation: 薄膜晶体管基板包括基底基板，有源图案，栅极绝缘图案和栅电极。 有源图案设置在基底基板上。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。 栅极绝缘图案和栅电极与沟道重叠。 栅极绝缘图案设置在沟道和栅电极之间。 源电极和漏极各自包括氟沉积层。