公开(公告)号：US09666602B2

公开(公告)日：2017-05-30

申请号：US13828990

申请日：2013-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji-Seon Lee ,  Dong-Jo Kim ,  Yoon-Ho Khang ,  Yong-Su Lee ,  Jong-Chan Lee

IPC: H01L33/08 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.

公开(公告)号：US20140145178A1

公开(公告)日：2014-05-29

申请号：US13838219

申请日：2013-03-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG-SU LEE ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

公开(公告)号：US09312279B2

公开(公告)日：2016-04-12

申请号：US14170202

申请日：2014-01-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung-Geun Cha ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park

IPC: H01L21/00 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

Abstract translation: 薄膜晶体管（TFT）阵列基板包括在基板上的基板，栅电极，栅极线，第一数据线和第二数据线，覆盖栅电极和栅极线的栅极绝缘层， 暴露第一数据线的一部分的第一开口和暴露第二数据线的一部分的第二开口，设置在栅绝缘层上的有源层，使得有源层的至少一部分与栅电极重叠， 从有源层的相对侧延伸的漏电极和源电极，从漏极延伸的像素电极和从源电极延伸的连接布线，并且将第一数据线连接到第二数据线通过 栅极绝缘层的第一和第二开口。

公开(公告)号：US09281343B2

公开(公告)日：2016-03-08

申请号：US13761930

申请日：2013-02-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Su Lee ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Dong-Jo Kim ,  Min-Jung Lee

IPC: H01L27/12 ,  H01L27/15 ,  G02F1/1345 ,  G02F1/1362

CPC classification number: H01L27/156 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248

Abstract: A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Abstract translation: 薄膜晶体管显示面板包括：栅电极，源电极和漏电极，其包括在基板上的薄膜晶体管中; 连接到源电极的数据线; 将漏电极连接到像素电极的像素连接构件; 以及栅极焊盘，其通过栅极线连接到栅电极，并且包括第一栅极子板，第二栅极子板和栅极焊盘连接部件，其中像素连接部件和栅极焊盘连接部件的厚度基本相同。

公开(公告)号：US09252284B2

公开(公告)日：2016-02-02

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan Lee ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US20150102336A1

公开(公告)日：2015-04-16

申请号：US14195806

申请日：2014-03-03

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Seung-Hwan Cho ,  Yoon-Ho Khang ,  Jong-Chan Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.

Abstract translation: 薄膜晶体管包括形成在基板上的半导体图案，所述半导体图案由氧化物半导体形成并且包括源极区域，漏极区域和形成在源极区域和漏极区域之间的中间区域，并且包括 多个第一区域和具有比第一区域更高的导电性的第二区域; 形成为至少覆盖所述第一区域的第一绝缘图案; 形成为面对所述第二区域，所述源极区域和所述漏极区域的第二绝缘膜; 形成在所述半导体图案上并通过所述第一绝缘图案和所述第二绝缘膜与所述半导体图案绝缘的栅电极; 以及与栅电极绝缘并与源极区域和漏极区域接触的源极和漏极电极。

公开(公告)号：US20150060843A1

公开(公告)日：2015-03-05

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan LEE ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US20170200740A1

公开(公告)日：2017-07-13

申请号：US15460161

申请日：2017-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Seung-Hwan Cho ,  Yoon-Ho Khang ,  Jong-Chan Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.

公开(公告)号：US09276086B2

公开(公告)日：2016-03-01

申请号：US14623693

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US08884286B2

公开(公告)日：2014-11-11

申请号：US13838219

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su Lee ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。