Connecting structure of a conductive layer

    公开(公告)号:US11276580B2

    公开(公告)日:2022-03-15

    申请号:US16296646

    申请日:2019-03-08

    Abstract: A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 μm, and each of the thicknesses of the first and second insulating layers is less than 1 μm.

    Transistor array panel and manufacturing method thereof

    公开(公告)号:US10741589B2

    公开(公告)日:2020-08-11

    申请号:US16215520

    申请日:2018-12-10

    Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

    Method of forming a fine pattern
    20.
    发明授权
    Method of forming a fine pattern 有权
    形成精细图案的方法

    公开(公告)号:US09365933B2

    公开(公告)日:2016-06-14

    申请号:US14718127

    申请日:2015-05-21

    Abstract: A method of forming a fine pattern includes providing a first metal layer on a base substrate, providing a first passivation layer on the first metal layer, providing a mask pattern on the first passivation layer, providing a partitioning wall pattern having a reverse taper shape by etching the first passivation layer, coating a composition having a block copolymer between the partitioning wall patterns adjacent each other, providing a self-aligned pattern by heating the composition, and providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask.

    Abstract translation: 形成精细图案的方法包括在基底基板上提供第一金属层,在第一金属层上提供第一钝化层,在第一钝化层上提供掩模图案,通过以下步骤提供具有倒锥形的分隔壁图案: 蚀刻第一钝化层,在彼此相邻的分隔壁图案之间涂覆具有嵌段共聚物的组合物,通过加热组合物提供自对准图案,以及通过使用自对准图案蚀刻第一金属层来提供金属图案 作为面具。

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