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    Thin film transistor array panel and method of manufacturing the same
    4.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US09076691B2

    公开(公告)日：2015-07-07

    申请号：US13875722

    申请日：2013-05-02

    Applicant: Samsung Display Co., Ltd.

    Inventor： Shin Il Choi ,  Sang Gab Kim ,  Su Bin Bae ,  Yu-Gwang Jeong

    IPC: H01L21/00 ,  H01L27/12 ,  H01L27/32

    CPC classification number: H01L27/124 ,  H01L27/1248 ,  H01L27/322 ,  H01L27/3248

    Abstract: A method of manufacturing a thin film transistor array panel includes: a gate insulating layer disposed on a gate electrode, a semiconductor disposed on the gate insulating layer, a source electrode opposite a drain electrode disposed on the semiconductor, a color filter disposed on the gate insulating layer, an overcoat disposed on the color filter and including an inorganic material. A first dry etching is performed using the photosensitive film pattern as a mask to etch the overcoat and provide a preliminary contact hole, through which a portion of the color filter is exposed. A second dry etching is performed using the overcoat as a mask to etch the color filter through the preliminary contact hole and to provide a contact hole, through which a portion of the drain electrode is exposed. A pixel electrode is connected to the drain electrode through the contact hole, on the overcoat.

    Abstract translation: 制造薄膜晶体管阵列面板的方法包括：设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上的半导体，设置在半导体上的漏电极相对的源电极，设置在栅极上的滤色器 绝缘层，设置在滤色器上并包括无机材料的外涂层。 使用感光膜图案作为掩模进行第一干蚀刻，以蚀刻外涂层并提供初步接触孔，滤色片的一部分穿过该预接触孔。 使用外涂层作为掩模进行第二干蚀刻，以通过预接触孔蚀刻滤色器，并提供接触孔，漏电极的一部分暴露在该接触孔中。 像素电极通过外罩上的接触孔连接到漏电极。

    Display panel
    5.
    发明授权
    Display panel 有权

    公开(公告)号：US11462573B2

    公开(公告)日：2022-10-04

    申请号：US16877596

    申请日：2020-05-19

    Applicant: Samsung Display Co., LTD.

    Inventor： Juhyun Lee ,  Gyungmin Baek ,  Hongsick Park ,  Sangwon Shin ,  Hyuneok Shin ,  Shin Il Choi

    IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

    Abstract: A display panel includes a base substrate, a pixel including a thin film transistor and a display element, a first signal line connected to the pixel, and a second signal line disposed on a layer different from the first signal line. At least one of the first signal line and the second signal line includes a lower layer including a conductive material and an upper layer disposed on the lower layer and including a conductive material. The upper layer has an etch selectivity in a range equal to or greater than about 0.5 and equal to or smaller than about 3 with respect to the lower layer.

    Connecting structure of a conductive layer
    6.
    发明授权
    Connecting structure of a conductive layer 有权

    公开(公告)号：US11276580B2

    公开(公告)日：2022-03-15

    申请号：US16296646

    申请日：2019-03-08

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Su Bin Bae ,  Yu-Gwang Jeong ,  Shin Il Choi ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L29/41 ,  H01L21/311 ,  H01L21/027 ,  H01L21/768 ,  H01L21/763

    Abstract: A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 μm, and each of the thicknesses of the first and second insulating layers is less than 1 μm.

    Display device, manufacturing method thereof, and electrode forming method
    7.
    发明授权
    Display device, manufacturing method thereof, and electrode forming method 有权

    公开(公告)号：US10748943B2

    公开(公告)日：2020-08-18

    申请号：US16124356

    申请日：2018-09-07

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hyun Min Cho ,  Shin Il Choi ,  Kyeong Su Ko ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/3213 ,  H01L51/50

    Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

    Transistor array panel and manufacturing method thereof
    8.
    发明授权
    Transistor array panel and manufacturing method thereof 有权

    公开(公告)号：US10741589B2

    公开(公告)日：2020-08-11

    申请号：US16215520

    申请日：2018-12-10

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yu-Gwang Jeong ,  Hyun Min Cho ,  Su Bin Bae ,  Shin Il Choi ,  Sang Gab Kim

    IPC: H01L27/12 ,  H01L21/311 ,  H01L29/417 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

    Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

    Display device
    9.
    发明授权
    Display device 有权

    公开(公告)号：US10510900B2

    公开(公告)日：2019-12-17

    申请号：US15686415

    申请日：2017-08-25

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hyun Eok Shin ,  Sang Won Shin ,  Dong Min Lee ,  Ju Hyun Lee ,  Shin Il Choi

    IPC: H01L29/786 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

    Abstract: A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

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