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公开(公告)号：US12087865B2
公开(公告)日：2024-09-10
申请号：US18176454
申请日：2023-02-28
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/12 , H01L29/417 , H01L29/66 , H01L29/786 , H10K59/121
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H10K59/1213
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US11864430B2
公开(公告)日：2024-01-02
申请号：US17853468
申请日：2022-06-29
发明人： Seong Min Wang , Young-In Hwang , Yong Ho Yang , Yong Su Lee , Jae Seob Lee , Gyoo Chul Jo
IPC分类号： H10K59/123 , G09G3/3233 , H10K50/805 , G09G3/3258 , H10K59/126 , H10K59/131 , H10K59/121 , H10K77/10 , H10K102/00
CPC分类号： H10K59/123 , G09G3/3233 , G09G3/3258 , H10K50/805 , H10K59/126 , H10K59/1213 , H10K59/131 , H10K77/111 , H10K2102/311
摘要： A display may include flexible substrate, a blocking layer on the flexible substrate, a pixel on the flexible substrate and the blocking layer, and a scan line, a data line, a driving voltage line, and an initialization voltage line connected to the pixel. The pixel may include an organic light emitting diode, a switching transistor connected to the scan line, and a driving transistor to apply a current to the organic light emitting diode. The blocking layer is in an area that overlaps the switching transistor on a plane, and between the switching transistor and the flexible substrate, and receives a voltage through a contact hole that exposes the blocking layer.
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公开(公告)号：US11626429B2
公开(公告)日：2023-04-11
申请号：US17071579
申请日：2020-10-15
发明人： Sang Sub Kim , Keun Woo Kim , Ji Yeong Shin , Yong Su Lee , Myoung Geun Cha , Ki Seok Choi , Sang Gun Choi
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32 , H01L21/225 , H01L21/28 , G09G3/32 , H01L21/265
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US11437455B2
公开(公告)日：2022-09-06
申请号：US16856780
申请日：2020-04-23
发明人： Keun Woo Kim , Hye Na Kwak , Doo Na Kim , Sang Sub Kim , Thanh Tien Nguyen , Yong Su Lee , Jae Hwan Chu
IPC分类号： G09G3/3233 , H01L27/32 , H01L27/12 , H01L29/786 , H01L29/66
摘要： A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.
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公开(公告)号：US11257886B2
公开(公告)日：2022-02-22
申请号：US16591966
申请日：2019-10-03
发明人： Joon Woo Bae , So Young Koo , Han Bit Kim , Thanh Tien Nguyen , Kyoung Won Lee , Yong Su Lee , Jae Seob Lee , Gyoo Chul Jo
IPC分类号： H01L27/32 , H01L51/52 , H01L29/786 , H01L27/12
摘要： An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.
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公开(公告)号：US09147741B2
公开(公告)日：2015-09-29
申请号：US13892574
申请日：2013-05-13
发明人： Hyun Jae Na , Yoon Ho Khang , Sang Ho Park , Dong Hwan Shim , Se Hwan Yu , Yong Su Lee , Myoung Geun Cha
IPC分类号： H01L21/84 , H01L21/20 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , H01L29/518 , H01L29/78603 , H01L29/78633
摘要： A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.
摘要翻译： 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及 形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。
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公开(公告)号：US11925098B2
公开(公告)日：2024-03-05
申请号：US17982721
申请日：2022-11-08
发明人： Myoung Geun Cha , Sang Gun Choi , Joon Woo Bae , Ji Yeong Shin , Yong Su Lee
IPC分类号： H10K71/00 , H01L21/308 , H10K50/84 , H10K59/122 , H10K59/126 , H10K59/131
CPC分类号： H10K71/00 , H01L21/308 , H10K50/84 , H10K59/122 , H10K59/126 , H10K59/131
摘要： A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.
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公开(公告)号：US11158261B2
公开(公告)日：2021-10-26
申请号：US16852848
申请日：2020-04-20
发明人： Keun Woo Kim , Mee Jae Kang , Hye Na Kwak , Han Bit Kim , Thanh Tien Nguyen , Yong Su Lee , Jae Seob Lee
IPC分类号： G09G3/325 , G09G3/3283 , G09G3/3266
摘要： A display device includes: a pixel including: a light emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light emitting element to control a driving current, and including a first gate electrode connected to a first node and a second gate electrode connected to a bias control line; and a switching transistor connected between a data line and the first node, and including a gate electrode connected to a scan line; and a driving circuit to drive the pixel according to a driving frequency. The driving circuit drives the pixel in a first mode when the driving frequency is in a first range, and sequentially supplies a control signal having a first voltage and a second voltage to the bias control line during a light emission period of the pixel in the first mode.
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公开(公告)号：US10861978B2
公开(公告)日：2020-12-08
申请号：US16231781
申请日：2018-12-24
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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10.发明申请公开(公告)号：US20190312147A1
公开(公告)日：2019-10-10
申请号：US16231781
申请日：2018-12-24
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L29/786 , H01L27/12 , H01L29/417 , H01L29/66
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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