公开(公告)号：US12015088B2

公开(公告)日：2024-06-18

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H10K59/12

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11871617B2

公开(公告)日：2024-01-09

申请号：US18078072

申请日：2022-12-08

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Jae Seob Lee

IPC: H01L27/32 ,  H10K59/121 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02661 ,  H01L21/02675 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696 ,  H01L2029/42388 ,  H10K59/1201

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

公开(公告)号：US11450133B2

公开(公告)日：2022-09-20

申请号：US16824475

申请日：2020-03-19

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Doo Na Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Jae Hwan Chu ,  Ki Seok Choi

IPC: G06V40/13 ,  G06F3/043 ,  G01B17/00 ,  H01L41/08 ,  G06F3/041 ,  H01L27/32 ,  G01B17/06 ,  G01B17/08

Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, a double-gated first transistor connected to a selection line and the sensing electrode, and may further include a sensed voltage storing capacitor having an electrode on the same layers as the first transistor. The configuration as a double gated transistor of a pixel sensor and the placement of one of the capacitor electrodes on the same layer can each reduce the size of the pixel sensor. The ultrasonic sensing device may be utilized as a proximity sensor or a fingerprint recognition sensor.

公开(公告)号：US12185581B2

公开(公告)日：2024-12-31

申请号：US17376064

申请日：2021-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim

IPC: H10K59/121 ,  H10K59/126 ,  H10K59/65 ,  H10K77/10

Abstract: An embodiment of a display device includes a flexible substrate including a polyimide layer and a barrier layer disposed on the polyimide layer. A driving transistor and a second transistor are disposed on the flexible substrate and include a polycrystalline semiconductor layer. A third transistor is disposed on the flexible substrate and includes an oxide semiconductor layer. A light emitting diode is electrically connected to the driving transistor. A bottom shield layer is disposed between the polyimide layer and the polycrystalline semiconductor layer in a cross-sectional view and disposed around a channel of the driving transistor in a plan view.

公开(公告)号：US11881487B2

公开(公告)日：2024-01-23

申请号：US17386854

申请日：2021-07-28

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit Kim ,  Mee Jae Kang ,  Keun Woo Kim ,  Doo-Na Kim ,  Sang Sub Kim ,  Do Kyeong Lee ,  Jae Hwan Chu

IPC: H01L27/12 ,  H01L27/15 ,  H10K59/121

CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/156 ,  H10K59/1213

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

公开(公告)号：US11626429B2

公开(公告)日：2023-04-11

申请号：US17071579

申请日：2020-10-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L21/225 ,  H01L21/28 ,  G09G3/32 ,  H01L21/265

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11437455B2

公开(公告)日：2022-09-06

申请号：US16856780

申请日：2020-04-23

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Sang Sub Kim ,  Thanh Tien Nguyen ,  Yong Su Lee ,  Jae Hwan Chu

IPC: G09G3/3233 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.

公开(公告)号：US12225770B2

公开(公告)日：2025-02-11

申请号：US18525662

申请日：2023-11-30

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Jae Seob Lee

IPC: H10K59/121 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

公开(公告)号：US11727880B2

公开(公告)日：2023-08-15

申请号：US17971445

申请日：2022-10-21

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim

IPC: G09G3/3233 ,  G09G3/3266 ,  H10K59/131 ,  H10K59/121 ,  H01L27/12 ,  H01L29/786

CPC classification number: G09G3/3233 ,  G09G3/3266 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/131 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2330/021 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78675

Abstract: A pixel may include a light-emitting element, a first transistor including first and second gate electrodes, a second transistor which is connected between a data line and the second gate electrode, and turned on in response to a third scan signal, a third transistor which is connected between first and second nodes, and turned on in response to a second scan signal, a fourth transistor which is connected between the first node and a third power line, and turned on in response to a first scan signal, a fifth transistor which is connected between the first power line and the first transistor, and turned off in response to a first emission control signal, a sixth transistor which is turned off in response to a second emission control signal, and a first capacitor connected between the first power line and the first node.

公开(公告)号：US20230025912A1

公开(公告)日：2023-01-26

申请号：US17870796

申请日：2022-07-21

Applicant: Samsung Display Co., LTD.

Inventor： Joon Woo BAE ,  Keun Woo Kim ,  Jae Hwan CHU ,  Sang Gun CHOI

IPC: H01L27/32

Abstract: A display device including: a display area including a plurality of pixels; and a peripheral area disposed around the display area to include a driving signal transmission line, each of the pixels may include a transistor, a driving voltage line connected to the transistor and the driving signal transmission line, and a light emitting unit connected to the transistor, the pixels may include a first pixel and a second pixel spaced apart from the driving signal transmission line to have different distances from each other, and a concentration of impurities doped in a semiconductor layer of the transistor of the first pixel may be different from a concentration of impurities doped in a semiconductor layer of the transistor of the second pixel.