公开(公告)号：US12075655B2

公开(公告)日：2024-08-27

申请号：US17151883

申请日：2021-01-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/12 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US10930725B2

公开(公告)日：2021-02-23

申请号：US16575643

申请日：2019-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/32

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US11626429B2

公开(公告)日：2023-04-11

申请号：US17071579

申请日：2020-10-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L21/225 ,  H01L21/28 ,  G09G3/32 ,  H01L21/265

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US12015088B2

公开(公告)日：2024-06-18

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H10K59/12

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11659745B2

公开(公告)日：2023-05-23

申请号：US17683848

申请日：2022-03-01

Applicant: Samsung Display Co., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Hye Na Kwak ,  Yun Jung Oh ,  Ki Seok Choi

IPC: G06F3/044 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/3276 ,  G06F3/0445 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/124 ,  H01L27/1222 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.

公开(公告)号：US11450133B2

公开(公告)日：2022-09-20

申请号：US16824475

申请日：2020-03-19

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Doo Na Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Jae Hwan Chu ,  Ki Seok Choi

IPC: G06V40/13 ,  G06F3/043 ,  G01B17/00 ,  H01L41/08 ,  G06F3/041 ,  H01L27/32 ,  G01B17/06 ,  G01B17/08

Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, a double-gated first transistor connected to a selection line and the sensing electrode, and may further include a sensed voltage storing capacitor having an electrode on the same layers as the first transistor. The configuration as a double gated transistor of a pixel sensor and the placement of one of the capacitor electrodes on the same layer can each reduce the size of the pixel sensor. The ultrasonic sensing device may be utilized as a proximity sensor or a fingerprint recognition sensor.