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公开(公告)号：US12075655B2
公开(公告)日：2024-08-27
申请号：US17151883
申请日：2021-01-19
发明人： Myoung Geun Cha , Sang Gun Choi , Sang Sub Kim , Ji Yeong Shin , Yong Su Lee , Ki Seok Choi
IPC分类号： H01L27/12 , H10K59/121 , H10K59/123 , H10K59/124
CPC分类号： H10K59/1213 , H10K59/1216 , H10K59/123 , H10K59/124
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
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公开(公告)号：US10930725B2
公开(公告)日：2021-02-23
申请号：US16575643
申请日：2019-09-19
发明人： Myoung Geun Cha , Sang Gun Choi , Sang Sub Kim , Ji Yeong Shin , Yong Su Lee , Ki Seok Choi
IPC分类号： H01L27/32
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
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公开(公告)号：US10826026B2
公开(公告)日：2020-11-03
申请号：US16203784
申请日：2018-11-29
发明人： Myoung Geun Cha , Sang Gun Choi , Joon Woo Bae , Ji Yeong Shin , Yong Su Lee
IPC分类号： H01L51/56 , H01L27/32 , H01L21/308 , H01L51/52
摘要： A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.
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公开(公告)号：US10453911B2
公开(公告)日：2019-10-22
申请号：US15965160
申请日：2018-04-27
发明人： Myoung Geun Cha , Sang Gun Choi , Thanh Tien Nguyen , Kyoung Won Lee , Yong Su Lee , Joo Hye Jung
IPC分类号： H01L27/32 , G09G3/3233 , G09G3/3258
摘要： A display device includes first semiconductor pattern including a first channel portion, a first electrode connected to a driving voltage line, and a second electrode connected to a light emitting element, a first insulating, a first conductive layer including a first gate electrode, a second insulating layer, a second conductive layer including an initialization power line, a third insulating layer, an upper semiconductor layer including a second semiconductor pattern including a second channel portion, a third electrode, and a fourth electrode connected to the first gate electrode, and a third semiconductor pattern including a third channel portion, a fifth electrode connected to the third electrode, and a sixth electrode connected to the second electrode, a fourth insulating layer, and a third conductive layer including a scan line and a control signal line, wherein the upper semiconductor layer does not overlap the first gate electrode and the initialization power line.
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公开(公告)号：US11925098B2
公开(公告)日：2024-03-05
申请号：US17982721
申请日：2022-11-08
发明人： Myoung Geun Cha , Sang Gun Choi , Joon Woo Bae , Ji Yeong Shin , Yong Su Lee
IPC分类号： H10K71/00 , H01L21/308 , H10K50/84 , H10K59/122 , H10K59/126 , H10K59/131
CPC分类号： H10K71/00 , H01L21/308 , H10K50/84 , H10K59/122 , H10K59/126 , H10K59/131
摘要： A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.
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公开(公告)号：US09946114B2
公开(公告)日：2018-04-17
申请号：US14792364
申请日：2015-07-06
发明人： Sang Gun Choi , Seung-Yeon Chae , Tae Woon Cha
IPC分类号： G02F1/1339 , G02F1/1337 , G02F1/1333
CPC分类号： G02F1/1337 , G02F1/1339 , G02F2001/133388
摘要： A display device includes: a display substrate including a display area including a plurality of pixel areas and a non-display area at edge sides of the display area; and an aligning agent-accommodating structure including a capping layer disposed in the non-display area to be opened inward of the display substrate. The aligning agent-accommodating structure accommodates an aligning agent applied to the display area.
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公开(公告)号：US09618812B2
公开(公告)日：2017-04-11
申请号：US14173636
申请日：2014-02-05
发明人： Tae Woon Cha , Sang Gun Choi , Ha Young Park
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1341 , G02F1/1335
CPC分类号： G02F1/136209 , G02F1/133377 , G02F1/133512 , G02F1/1341 , G02F2001/133368 , G02F2001/136218
摘要： Provided are a liquid crystal display and a method of fabricating the liquid crystal display. The liquid crystal display comprises: a substrate; a signal electrode on the substrate; a first light-blocking pattern on the signal electrode and having a trench extending to and exposing at least part of the signal electrode; and a second light-blocking pattern on the trench of the first light-blocking pattern and covering the signal electrode, wherein the second light-blocking pattern comprises at least one metal layer.
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公开(公告)号：US09417474B2
公开(公告)日：2016-08-16
申请号：US13689518
申请日：2012-11-29
发明人： Sang Gun Choi , Woo Yong Sung , Tae Woon Cha
IPC分类号： G02F1/1335 , G02F1/1333 , H01L33/08 , G06F3/041 , G02F1/1362 , G06F3/047
CPC分类号： G02F1/13338 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/1337 , G02F1/134336 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F2001/134345 , G02F2201/123 , G06F3/041 , G06F3/0412 , G06F3/0416 , G06F3/044 , G06F3/047 , H01L33/08
摘要： A manufacturing method of a liquid crystal display includes: providing a thin film transistor on a substrate; providing a pixel electrode connected to the thin film transistor; providing a microcavity layer including a liquid crystal material on the pixel electrode; providing a supporting member layer on the microcavity layer; patterning the supporting member layer to form a plurality of recess portions therein; and providing a plurality of touch signal lines for transmitting a touch signal in the plurality of recess portions.
摘要翻译： 液晶显示器的制造方法包括：在基板上设置薄膜晶体管; 提供连接到所述薄膜晶体管的像素电极; 在像素电极上提供包括液晶材料的微腔层; 在所述微腔层上提供支撑构件层; 图案化支撑构件层以在其中形成多个凹部; 以及提供多个用于在所述多个凹部中传送触摸信号的触摸信号线。
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公开(公告)号：US20160062159A1
公开(公告)日：2016-03-03
申请号：US14939639
申请日：2015-11-12
发明人： A Ram Lee , Woo Yong Sung , Tae Gyun Kim , Seung-Yeon Chae , Sang Gun Choi , Tae Woon Cha
IPC分类号： G02F1/1341 , G02F1/1362 , G02F1/1335 , G02F1/1368 , G02F1/1333
CPC分类号： G02F1/1341 , G02F1/133305 , G02F1/133345 , G02F1/133377 , G02F1/133528 , G02F1/136209 , G02F1/1368 , G02F2201/501
摘要： A display device and a method of manufacturing the display device are provided. Moisture may be prevented from penetrating into the display device. The display device includes a substrate including a pixel area. A thin film transistor is formed on the substrate. A pixel electrode is connected to the thin film transistor and formed in the pixel area. A roof layer is formed on the pixel electrode. The roof layer is separated from the pixel electrode via a microcavity. A liquid crystal layer fills the microcavity. A liquid crystal injection hole is formed in the roof layer and exposes a portion of the microcavity. An encapsulation layer is formed on the roof layer. The encapsulation layer covers the liquid crystal injection hole and seals the microcavity for the pixel area. The encapsulation layer includes a multilayer structure.
摘要翻译： 提供了显示装置和制造显示装置的方法。 可以防止水分渗透到显示装置中。 显示装置包括包括像素区域的基板。 在基板上形成薄膜晶体管。 像素电极连接到薄膜晶体管并形成在像素区域中。 在像素电极上形成屋顶层。 屋顶层通过微腔与像素电极分离。 液晶层填充微腔。 在屋顶层中形成液晶注入孔，露出微腔的一部分。 在屋顶层上形成封装层。 封装层覆盖液晶注入孔，并密封像素区域的微腔。 封装层包括多层结构。
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公开(公告)号：US12015088B2
公开(公告)日：2024-06-18
申请号：US18122815
申请日：2023-03-17
发明人： Sang Sub Kim , Keun Woo Kim , Ji Yeong Shin , Yong Su Lee , Myoung Geun Cha , Ki Seok Choi , Sang Gun Choi
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H10K59/121 , G09G3/32 , H01L21/225 , H01L21/265 , H01L21/28 , H10K59/12
CPC分类号： H01L29/78603 , H01L27/1274 , H01L29/6675 , H10K59/1213 , G09G3/32 , G09G2300/0809 , H01L21/2253 , H01L21/26533 , H01L21/28158 , H01L27/1255 , H10K59/1201
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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