公开(公告)号：US11626429B2

公开(公告)日：2023-04-11

申请号：US17071579

申请日：2020-10-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L21/225 ,  H01L21/28 ,  G09G3/32 ,  H01L21/265

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US12159585B2

公开(公告)日：2024-12-03

申请号：US18448817

申请日：2023-08-11

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Chan Yeob Seol ,  Bum Mo Sung ,  Ji Yeong Shin

IPC: G09G3/3233 ,  G09G3/3291

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

公开(公告)号：US11925098B2

公开(公告)日：2024-03-05

申请号：US17982721

申请日：2022-11-08

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Joon Woo Bae ,  Ji Yeong Shin ,  Yong Su Lee

IPC: H10K71/00 ,  H01L21/308 ,  H10K50/84 ,  H10K59/122 ,  H10K59/126 ,  H10K59/131

CPC classification number: H10K71/00 ,  H01L21/308 ,  H10K50/84 ,  H10K59/122 ,  H10K59/126 ,  H10K59/131

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US11910664B2

公开(公告)日：2024-02-20

申请号：US17252670

申请日：2018-12-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Ji Yeong Shin ,  Yong Su Lee

IPC: H10K59/131 ,  G09G3/32 ,  H10K59/123 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/131 ,  G09G3/32 ,  H10K59/123 ,  H10K77/111 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2320/02 ,  H10K2102/311

Abstract: A display device includes a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area disposed in the peripheral area. A plurality of transistors is disposed in each pixel; a driving voltage line is disposed in the display area and transmits a driving voltage; a driving voltage transmission line is disposed in the peripheral area and is connected to the driving voltage line; and a conductive overlap layer overlaps at least one of the plurality of transistors.

公开(公告)号：US11502282B2

公开(公告)日：2022-11-15

申请号：US17075872

申请日：2020-10-21

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Joon Woo Bae ,  Ji Yeong Shin ,  Yong Su Lee

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US12015088B2

公开(公告)日：2024-06-18

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H10K59/12

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11450133B2

公开(公告)日：2022-09-20

申请号：US16824475

申请日：2020-03-19

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Doo Na Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Jae Hwan Chu ,  Ki Seok Choi

IPC: G06V40/13 ,  G06F3/043 ,  G01B17/00 ,  H01L41/08 ,  G06F3/041 ,  H01L27/32 ,  G01B17/06 ,  G01B17/08

Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, a double-gated first transistor connected to a selection line and the sensing electrode, and may further include a sensed voltage storing capacitor having an electrode on the same layers as the first transistor. The configuration as a double gated transistor of a pixel sensor and the placement of one of the capacitor electrodes on the same layer can each reduce the size of the pixel sensor. The ultrasonic sensing device may be utilized as a proximity sensor or a fingerprint recognition sensor.

公开(公告)号：US12075655B2

公开(公告)日：2024-08-27

申请号：US17151883

申请日：2021-01-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/12 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US10930725B2

公开(公告)日：2021-02-23

申请号：US16575643

申请日：2019-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/32

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US10826026B2

公开(公告)日：2020-11-03

申请号：US16203784

申请日：2018-11-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Joon Woo Bae ,  Ji Yeong Shin ,  Yong Su Lee

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.