公开(公告)号：US11195444B2

公开(公告)日：2021-12-07

申请号：US17038256

申请日：2020-09-30

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Hye Na Kwak ,  Doo Na Kim ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Yong Su Lee ,  Jae Hwan Chu

IPC: G09G3/20

Abstract: A display device includes: a pixel unit including a plurality of pixels; a scan driver having a plurality of stages and configured to supply a scan signal to the pixel unit; and a light emission control driver having a plurality of stages and configured to supply a light emission control signal to the pixel unit, wherein a first transistor of a plurality of transistors included in at least one of the stages of the scan driver or the stages of the light emission control driver comprises: an active layer pattern on a base layer, and including a channel region forming a channel, and first and second regions on opposite sides of the channel region; and a gate electrode spaced apart from the active layer pattern with a first insulating film therebetween, and overlapping the channel region.

公开(公告)号：US12225770B2

公开(公告)日：2025-02-11

申请号：US18525662

申请日：2023-11-30

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Jae Seob Lee

IPC: H10K59/121 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

公开(公告)号：US20210280652A1

公开(公告)日：2021-09-09

申请号：US17062299

申请日：2020-10-02

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Jae Seob Lee

IPC: H01L27/32

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

公开(公告)号：US12245475B2

公开(公告)日：2025-03-04

申请号：US17687702

申请日：2022-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Tae Wook Kang ,  Bum Mo Sung ,  Yun Jung Oh ,  Yong Su Lee

IPC: H01L21/40 ,  H10K50/814 ,  H10K50/824 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K59/12

Abstract: A display device includes: a substrate; a transistor disposed on the substrate; a first electrode connected to the transistor; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; a common voltage line connected to the second electrode; and a third electrode and a fourth electrode disposed between the common voltage line and the second electrode.

公开(公告)号：US11871617B2

公开(公告)日：2024-01-09

申请号：US18078072

申请日：2022-12-08

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Jae Seob Lee

IPC: H01L27/32 ,  H10K59/121 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02661 ,  H01L21/02675 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696 ,  H01L2029/42388 ,  H10K59/1201

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

公开(公告)号：US12295169B2

公开(公告)日：2025-05-06

申请号：US18607426

申请日：2024-03-16

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Sang Sub Kim ,  Bum Mo Sung

IPC: H10D86/01 ,  G09G3/3233 ,  H10K59/121

Abstract: A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

公开(公告)号：US12159585B2

公开(公告)日：2024-12-03

申请号：US18448817

申请日：2023-08-11

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Chan Yeob Seol ,  Bum Mo Sung ,  Ji Yeong Shin

IPC: G09G3/3233 ,  G09G3/3291

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

公开(公告)号：US11552149B2

公开(公告)日：2023-01-10

申请号：US17062299

申请日：2020-10-02

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Jae Seob Lee

IPC: H01L27/32 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.