公开(公告)号：US20150279479A1

公开(公告)日：2015-10-01

申请号：US14283154

申请日：2014-05-20

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Wei-Chuan CHEN ,  Seung Hyuk KANG ,  Kangho LEE

IPC: G11C17/18 ,  G11C13/00 ,  G11C17/16

CPC classification number: G11C17/18 ,  G11C11/005 ,  G11C11/5614 ,  G11C11/5685 ,  G11C11/5692 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0069 ,  G11C17/165 ,  G11C2013/0042

Abstract: An anti-fuse device includes a first electrode, an insulator on the first electrode, a second electrode on the insulator, and selector logic coupled to the second electrode. The device also includes a conductive path between the first and second electrodes. The conductive path may be configured to provide a hard breakdown for one-time programmable non-volatile data storage.

Abstract translation: 反熔丝器件包括第一电极，第一电极上的绝缘体，绝缘体上的第二电极以及耦合到第二电极的选择器逻辑。 该装置还包括在第一和第二电极之间的导电路径。 导电路径可以被配置为提供一次性可编程非易失性数据存储器的硬击穿。

公开(公告)号：US20150228891A1

公开(公告)日：2015-08-13

申请号：US14179502

申请日：2014-02-12

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ includes a fixed layer and a barrier layer on the fixed layer. Such an MTJ also includes a free layer interfacing with the barrier layer. The free layer has a crystal structure in accordance with the barrier layer. The MTJ further includes an amorphous capping layer interfacing with the free layer.

Abstract translation: 描述了磁性隧道结（MTJ）和制造MTJ的方法。 MTJ在固定层上包括固定层和阻挡层。 这样的MTJ还包括与阻挡层接合的自由层。 自由层根据阻挡层具有晶体结构。 MTJ还包括与自由层接合的非晶覆盖层。

公开(公告)号：US20160284988A1

公开(公告)日：2016-09-29

申请号：US15173567

申请日：2016-06-03

Applicant: QUALCOMM INCORPORATED

Inventor： Matthias Georg GOTTWALD ,  Jimmy KAN ,  Kangho LEE ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

公开(公告)号：US20160020250A1

公开(公告)日：2016-01-21

申请号：US14334554

申请日：2014-07-17

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Wei-Chuan CHEN ,  Yu LU ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/08

CPC classification number: H01L27/224 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C2213/73 ,  H01L27/228 ,  H01L43/08

Abstract: An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.

Abstract translation: MRAM单元可以包括磁隧道结（MTJ）。 MTJ包括针层，阻挡层，自由层和覆盖层。 MRAM单元还包括直接耦合到MTJ的电极的双向二极管选择器，以使得能够访问MTJ。

公开(公告)号：US20160005955A1

公开(公告)日：2016-01-07

申请号：US14321516

申请日：2014-07-01

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Matthias Georg GOTTWALD ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

公开(公告)号：US20150311429A1

公开(公告)日：2015-10-29

申请号：US14795799

申请日：2015-07-09

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Kangho LEE ,  Wei-Chuan CHEN ,  Yu LU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

Abstract translation: 提供了一种改进的磁性隧道结装置和用于制造改进的磁性隧道结装置的方法。 所提供的双蚀刻工艺减少蚀刻损伤和烧蚀材料再沉积。 在一个实例中，提供了一种用于制造磁性隧道结（MTJ）的方法。 该方法包括在衬底上形成缓冲层，在衬底上形成底电极，在底电极上形成引脚层，在引脚层上形成阻挡层，并在阻挡层上形成自由层。 第一蚀刻包括蚀刻自由层，而不蚀刻阻挡层，引脚层和底部电极。 该方法还包括在自由层上形成顶部电极，以及在顶部电极上形成硬掩模层。 第二蚀刻包括蚀刻硬掩模层; 顶部电极层，阻挡层，针层和底部电极。

公开(公告)号：US20150280112A1

公开(公告)日：2015-10-01

申请号：US14229427

申请日：2014-03-28

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Kangho LEE ,  Wei-Chuan CHEN ,  Yu LU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

公开(公告)号：US20150171316A1

公开(公告)日：2015-06-18

申请号：US14109234

申请日：2013-12-17

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

Abstract translation: 磁隧道结（MTJ）装置包括自由层。 MTJ还包括耦合到自由层的阻挡层。 MTJ还具有耦合到阻挡层的固定层。 固定层包括具有第一垂直磁各向异性（PMA）和第一阻尼常数的第一合成反铁磁（SAF）多层。 固定层还包括具有第二垂直磁各向异性（PMA）和低于第一阻尼常数的第二阻尼常数的第二SAF多层。 第一SAF多层比第二SAF多层更靠近阻挡层。 固定层还包括在第一和第二SAF多层之间的SAF耦合层。