-
公开(公告)号：US10859457B2
公开(公告)日：2020-12-08
申请号：US15808044
申请日：2017-11-09
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
-
公开(公告)号：US10784147B2
公开(公告)日：2020-09-22
申请号：US16029237
申请日：2018-07-06
发明人： Ines Uhlig , Kerstin Kaemmer , Norbert Thyssen
IPC分类号： H01L21/762 , H01L21/768 , H01L21/3105 , H01L21/306 , H01L21/3065
摘要： In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.
-
公开(公告)号：US20180136064A1
公开(公告)日：2018-05-17
申请号：US15808044
申请日：2017-11-09
CPC分类号： G01L9/0073 , G01L9/0042 , G01N33/0027
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
-
14.发明授权公开(公告)号：US09478555B2
公开(公告)日：2016-10-25
申请号：US14927608
申请日：2015-10-30
IPC分类号： H01L27/11 , H01L27/112 , H01L21/02 , H01L29/51 , H01L23/525 , H01L29/423 , H01L21/265 , H01L21/28
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
-
公开(公告)号：US12068296B2
公开(公告)日：2024-08-20
申请号：US17583545
申请日：2022-01-25
发明人： Stefan Hampl , Marco Haubold , Kerstin Kaemmer , Norbert Thyssen
CPC分类号： H01L25/167 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29124 , H01L2224/32145 , H01L2224/83805 , H01L2924/01032 , H01L2924/01322
摘要： A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.
-
公开(公告)号：US11774308B2
公开(公告)日：2023-10-03
申请号：US17024228
申请日：2020-09-17
CPC分类号： G01L9/0073 , G01L9/0042 , G01N33/0027
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
-
公开(公告)号：US20190027399A1
公开(公告)日：2019-01-24
申请号：US16029237
申请日：2018-07-06
发明人： Ines Uhlig , Kerstin Kaemmer , Norbert Thyssen
IPC分类号： H01L21/762 , H01L21/306
摘要： In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.
-
公开(公告)号：US09000597B2
公开(公告)日：2015-04-07
申请号：US13959485
申请日：2013-08-05
IPC分类号： H01L29/41 , H01L21/28 , H01L27/02 , H01L21/283 , H01L27/088 , H01L29/66
CPC分类号： H01L21/28008 , H01L21/283 , H01L27/0207 , H01L27/088 , H01L29/6659
摘要： A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.
摘要翻译： 公开了一种半导体器件和制造半导体器件的方法。 制造半导体器件的方法包括在衬底上形成材料层，用第一主图案构图第一半全局区域，并用第二主图案构图第二半全局区域，其中第一主图案不同于 第二个主要模式。 该方法还包括在第一半全局区域中引入第一虚拟图案，使得第一主图案和第一半全局区域中的第一虚拟图案的第一侧壁区域表面密度和第一半全局区域的第二侧壁区域表面密度 第二个半全球区域的第二主要模式基本上是相同的密度。
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.024 秒)
